Abstract: A semiconductor device includes a power semiconductor device, a circuit board, and an insulating substrate. The power semiconductor device includes contact pads. Adjacent ones of the contact pads are separated by one of a plurality of gaps. The circuit board includes traces for coupling with the contact pads of the power semiconductor device. The contact pads are physically attached to the traces. The insulating substrate is disposed between the circuit board and the power semiconductor device, where portions of the insulating substrate are disposed in the plurality of gaps, and where the insulating substrate has a monolithic structure.

Abstract: A packaged assembly for high density power applications includes a case having shelves on opposing walls, and a double-sided substrate disposed on the shelves of the case, the double-sided substrate having a semiconductor die on a first side of the double-sided substrate and circuit elements on a second side of the double-sided substrate. The case includes aluminum silicon (AlSi). The double-sided substrate is secured to the case by an epoxy. The double-sided substrate a thick film substrate and includes beryllium oxide (BeO) or aluminum oxide (Al2O3). The semiconductor die on the first side of the double-sided substrate is coupled to at least one of the circuit elements on the second side of the double-sided substrate by a through substrate via. The packaged assembly also further includes invertible leads coupled to the double-sided substrate by lead frames.

Abstract: A packaged assembly for high density power applications includes a case having shelves on opposing walls, and a double-sided substrate disposed on the shelves of the case, the double-sided substrate having a semiconductor die on a first side of the double-sided substrate and circuit elements on a second side of the double-sided substrate. The case includes aluminum silicon (AlSi). The double-sided substrate is secured to the case by an epoxy. The double-sided substrate a thick film substrate and includes beryllium oxide (BeO) or aluminum oxide (Al2O3). The semiconductor die on the first side of the double-sided substrate is coupled to at least one of the circuit elements on the second side of the double-sided substrate by a through substrate via. The packaged assembly also further includes invertible leads coupled to the double-sided substrate by lead frames.