Abstract: The present invention concerns an ammonia production method comprising the steps of: providing at least one rare earth nitride material or layer in a chamber; creating a vacuum or an inert atmosphere in the chamber; and providing hydrogen H2 to react with nitrogen N released at an external surface of the at least one rare earth nitride material or layer to produce ammonia.

Abstract: The present invention concerns a structure or device comprising a rare earth nitride material, and a removable capping for passivating the rare earth nitride material.

Abstract: The present invention concerns an ammonia production method comprising the steps of: providing at least one rare earth nitride material or layer in a chamber; creating a vacuum or an inert atmosphere in the chamber; and providing hydrogen H2 to react with nitrogen N released at an external surface of the at least one rare earth nitride material or layer to produce ammonia.

Abstract: The present invention concerns a structure or device comprising a rare earth nitride material, and a removable capping for passivating the rare earth nitride material.

Abstract: Disclosed herein are magnesium-doped rare earth nitride materials, some of which are semi-insulating or insulating. Also disclosed are methods for preparing the materials. The magnesium-doped rare earth nitride materials may be useful in the fabrication of, for example, spintronics, electronic and optoelectronic devices.

Abstract: Disclosed herein are magnetic materials comprising rare earth nitrides and, more particularly, magnetic materials comprising multilayer-structured materials comprising one relatively soft and one relatively hard magnetic layer. The magnetic materials comprise a first ferromagnetic layer, a second ferromagnetic layer, and a blocking layer between and in contact with each of the first 5 and second ferromagnetic layers. The first and second ferromagnetic layers have different coercive fields. The first ferromagnetic layer comprises a first rare earth nitride material and the second ferromagnetic layer comprises a second rare earth nitride material. Also disclosed are methods for preparing the materials. The materials are useful in the fabrication of devices, such as GMR magnetic field sensors, MRAM devices, TMR magnetic field sensors, and magnetic 10 tunnel junctions.

Abstract: Structure or device comprising a hexagonal crystal layer or hexagonal crystal substrate, and a (001)-oriented rare earth nitride epitaxial layer on the hexagonal crystal layer or hexagonal crystal substrate.

Abstract: Structure or device comprising a hexagonal crystal layer or hexagonal crystal substrate, and a (001)-oriented rare earth nitride epitaxial layer on the hexagonal crystal layer or hexagonal crystal substrate.

Abstract: Structure or device comprises a AlxGa1-xN or InyGa1-yN layer or substrate, a rare earth nitride epitaxial layer, and an AlzGa1-zN epitaxial interlayer between the rare earth nitride epitaxial layer and the AlxGa1-xN or InyGa1-yN layer or substrate. The interlayer is in direct contact with the rare earth nitride epitaxial layer and the AlxGa1-xN or InyGa1-yN layer or substrate.

Abstract: Disclosed herein are magnesium-doped rare earth nitride materials, some of which are semi-insulating or insulating. Also disclosed are methods for preparing the materials. The magnesium-doped rare earth nitride materials may be useful in the fabrication of, for example, spintronics, electronic and optoelectronic devices.

Abstract: Disclosed herein are magnetic materials comprising rare earth nitrides and, more particularly, magnetic materials comprising multilayer-structured materials comprising one relatively soft and one relatively hard magnetic layer. The magnetic materials comprise a first ferromagnetic layer, a second ferromagnetic layer, and a blocking layer between and in contact with each of the first 5 and second ferromagnetic layers. The first and second ferromagnetic layers have different coercive fields. The first ferromagnetic layer comprises a first rare earth nitride material and the second ferromagnetic layer comprises a second rare earth nitride material. Also disclosed are methods for preparing the materials. The materials are useful in the fabrication of devices, such as GMR magnetic field sensors, MRAM devices, TMR magnetic field sensors, and magnetic 10 tunnel junctions.