Patents by Inventor Franck Wallart

Franck Wallart has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5023478
    Abstract: The present invention relates to fast complementary emitter follower drivers/buffers to be used in either a CMOS or pure complementary bipolar environment. The output driver (22) comprises top NPN and bottom PNP output transistors (T1, T2) with a common output node (N) connected therebetween. A terminal (15) is connected to the said output node (N) where the output signal (VOUT) is available. The pair of bipolar output transistors is biased between the first and second supply voltages (VH, GND). The output driver is provided with a voltage translator circuit (S) connected between the base nodes (B1, B2) of the output transistors (T1, T2). Logic signals (IN1, IN2), supplied by a preceding driving circuit (21), are applied to said base nodes. According to the invention, the voltage translator circuit (S) comprises two diodes (D1, D2) connected in series, preferably implemented with a main bipolar transistor having a junction shorted by a diode connected transistor to form a Darlington-like configuration.
    Type: Grant
    Filed: March 13, 1990
    Date of Patent: June 11, 1991
    Assignee: International Business Machines Corporation
    Inventors: Gerard Boudon, Pierre Mollier, Seiki Ogura, Dominique Omet, Pascal Tannhof, Franck Wallart
  • Patent number: 5010257
    Abstract: According to the present invention, a CMOS interface circuit (C2) similar to a latch made by two CMOS cross coupled inverters (INV1, INV2) is placed directly on the output node (14) of conventional BICMOS logic circuit (11) operating alone in a partial swing mode. This latch is made of four FETs P5, P6, N8, N9 cross-coupled in a conventional way with the feedback loop connected to said output node (14). The partial voltage swing (VBE to VH-VBE) naturally given by the output bipolar transistors (T1, T2) mounted in a push pull configuration is reinforced to full swing (GND to VH) by the latch at the end of each transition. The state of the output node if forced by the latch because of the high driving capability due to the presence of said output bipolar transistors (T1, T2). As a result, the improved BICMOS logic circuit (D2) has an output signal (S) that ranges within the desired full swing voltage at the output terminal (15).
    Type: Grant
    Filed: March 13, 1990
    Date of Patent: April 23, 1991
    Assignee: International Business Machines Corporation
    Inventors: Gerard Boudon, Pierre Mollier, Jean-Paul Nuez, Ieng Ong, Pascal Tannhof, Franck Wallart