Abstract: A method of forming an anti-reflection coating on a substrate uses plasma enhanced vapor deposition techniques including saddle field glow discharge by establishing a first plurality of parameters within a partial vacuum environment, forming a plasma from a gaseous feedstock, and depositing a first layer on the substrate having a first thickness and first index of refraction. While maintaining the vacuum environment, a second plurality of parameters is established by varying at least one of the parameters of the first plurality of parameters, and a second layer is deposited on the first layer having a second thickness and a second index of refraction. Feedstocks include hydrogen, methane and higher order hydrocarbons to form an anti-reflection coating of diamond-like carbon.

Abstract: A tandem junction photovoltaic cell has a first p-n junction with a first energy band gap, and a second p-n junction with a second energy band gap less than the first energy band gap. The junctions are separated by a quantum tunneling junction. The first p-n junction captures higher energy photons and allows lower energy photons to pass through and be captured by the second p-n junction. Quantum dots positioned within the first p-n junction promote quantum tunneling of charge carriers to increase the current generated by the first p-n junction and match the current of the second p-n junction for greater efficiency.

Abstract: A voltaic cell uses a radioactive material for energy. Energetic particles emitted by the radioactive material boost charge carriers within a semiconductor lattice into higher energy bands. Dielectric layers having quantum dots tuned by size and spacing (density) to favor particles having specific energies permit quantum mechanical tunneling of the charge carriers before they lose significant energy, are captured, or recombine. The energetic carriers tunnel to an electrical circuit, where they perform work.

Abstract: A tandem junction photovoltaic cell has a first p-n junction with a first energy band gap, and a second p-n junction with a second energy band gap less than the first energy band gap. The junctions are separated by a quantum tunneling junction. The first p-n junction captures higher energy photons and allows lower energy photons to pass through and be captured by the second p-n junction. Quantum dots positioned within the first p-n junction promote quantum tunneling of charge carriers to increase the current generated by the first p-n junction and match the current of the second p-n junction for greater efficiency.

Abstract: A voltaic cell uses a radioactive material for energy. Energetic particles emitted by the radioactive material boost charge carriers within a semiconductor lattice into higher energy bands. Dielectric layers having quantum dots tuned by size and spacing (density) to favor particles having specific energies permit quantum mechanical tunneling of the charge carriers before they lose significant energy, are captured, or recombine. The energetic carriers tunnel to an electrical circuit, where they perform work.

Abstract: The invention provides new methods and apparatus for the deposition of materials on substrates by the use of a D.C. glow discharge, sometimes also called a plasma discharge. A precursor gas (or gases) is introduced at low pressure (10-500 milliTor) into an enclosure containing two spaced parallel cathode electrodes and an intermediate parallel anode electrode, preferably midway between the two cathodes, which anode electrode is permeable to at least electrons of the glow or plasma discharge. Upon application of a suitable positive potential to the anode a deposition plasma is generated in the space on both sides of the anode.