Patents by Inventor Franco ITALIANO

Franco ITALIANO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11615857
    Abstract: A semiconductor well of a non-volatile memory houses memory cells. The memory cells each have a floating gate and a control gate. Erasing of the memory cells includes biasing the semiconductor well with a first erase voltage having an absolute value greater than a breakdown voltage level of bipolar junctions of a control gate switching circuit of the memory. An absolute value of the first erase voltage is based on a comparison of a value of an indication of wear of the memory cells to a wear threshold value.
    Type: Grant
    Filed: April 6, 2021
    Date of Patent: March 28, 2023
    Assignees: STMICROELECTRONICS S.r.l., STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Francesco La Rosa, Enrico Castaldo, Francesca Grande, Santi Nunzio Antonino Pagano, Giuseppe Nastasi, Franco Italiano
  • Publication number: 20210319836
    Abstract: A semiconductor well of a non-volatile memory houses memory cells. The memory cells each have a floating gate and a control gate. Erasing of the memory cells includes biasing the semiconductor well with a first erase voltage having an absolute value greater than a breakdown voltage level of bipolar junctions of a control gate switching circuit of the memory. An absolute value of the first erase voltage is based on a comparison of a value of an indication of wear of the memory cells to a wear threshold value.
    Type: Application
    Filed: April 6, 2021
    Publication date: October 14, 2021
    Inventors: Francesco LA ROSA, Enrico CASTALDO, Francesca GRANDE, Santi Nunzio Antonino PAGANO, Giuseppe NASTASI, Franco ITALIANO