Abstract: The present invention relates to a device (1) for introducing reaction gases into a reaction chamber of an epitaxial reactor; the device (1) comprises a gas supply pipe (2) and a cooling member (3) situated at one end of the supply pipe (2) and able to cool the supply pipe (2) and thereby the gas flowing inside it.

Abstract: The present invention relates to a system for handling wafers (W) within a treatment apparatus (1) comprising a suction system (10) equipped with a suction inlet, a suction pipe (7) having a first end and a second end, said first end being connected to the suction inlet of the suction system (10), a tool (6) suitable for handling wafers (W) and for holding them by suction, and connected to the second end of the suction pipe (7), and a device for regulating the pressure in the suction pipe; the regulating device comprises a valve (8) connected to the suction pipe (7) and capable of opening when the pressure in the suction pipe (7) falls below a predetermined value.

Abstract: The present invention relates to a susceptor (3) for epitaxial reactors, comprising a body (31) provided typically with at least one recess (311) for housing substrates on which epitaxial growth is performed; the susceptor (3) comprises a projecting part (32) able to be gripped by a tool (9) so as to be introduced into and extracted from a reaction chamber (12) of an epitaxial reactor.

Abstract: A system for an apparatus of the type adapted to treat substrates and/or wafers is described and comprises a stationary base element and a movable support for at least one substrate or at least one wafer, the support being rotatable above the element about a stationary axis; a chamber, and at least one duct is provided for the admission of at least one gas-flow to the chamber in order to raise the support; the system also comprises means for converting the flow of gas into the chamber into rotation of the support.

Abstract: Reaction chamer (10) for an epitaxial reactor comprising a belljar (14) made of insulating, transparent and chemically resistant material, a susceptor (24) provided with disk-shaped cavities (34a-n) for receiving wafers (36a-n) of material to be treated and having an insulating and chemically resistant plate (40) arranged above it, and a diffuser (54) consisting of a plurality of outlet pipes (106a-f) mounted on a cap (52) fixed to an upper opening (50) of the belljar (14).

Abstract: The invention relates to a method for cooling the walls of the reaction chamber (2) of a reactor for chemical vapour deposition. The method consists in selectively cooling with water at least one predetermined zone of the wall of the chamber (2), to remove a different heat flow compared with the adjacent zones so as to obtain substantially uniform temperature distribution of the reaction chamber (2). In a preferred embodiment, the selectively-cooled zone is the zone above the susceptor (5) and is delimited by two ribs (8, 9). The invention also includes a reactor and a reaction chamber (2) for carrying out the cooling method.

Abstract: The present invention relates to a process for cleaning the reaction chamber (12) of a CVD reactor, comprising the steps of heating the chamber walls to a suitable temperature and introducing a gas flow into the chamber, this cleaning process may be advantageously used within an operating process of a CVD reactor for depositing semiconductor material onto substrates inside a chamber; this operating process envisages a growth process comprising the sequential and cyclical loading of the substrates into the chamber (12), deposition of semiconductor material onto the substrates and unloading of the substrates from the chamber (12); after unloading a process for cleaning the chamber (12) is performed. The invention also relates to process for cleaning the entire CVD reactor, which envisages, together with heating, the presence of chemical etching components in the gas flow.

Abstract: A susceptor (1) for epitaxial growth reactors comprises a body (2) having a lower base (3), an upper top (4) and some substantially flat side faces (5); the side faces are adapted to receive, in predetermined areas (6), substrates on which the epitaxial growth develops; body (2) is provided with edge side regions (7) defined by couples of adjacent side faces (5); along edge side regions (7) in the upper part of body (2) there are provided first ribs (8) adapted to control the flow of reaction gases along side faces (5); along edge side regions (7) in the lower part of body (2) there are provided second ribs (9) adapted to control the flow of reaction gases along side faces (5).

Abstract: A system for growing silicon carbide crystals on substrates is described and comprises a chamber (1) which extends along an axis, wherein the chamber (1) has separate input means (2, ;) for gases containing carbon and for gases containing silicon, substrate support means (4) disposed in a first end zone (ZI) of the chambe, exhaust output means (5) disposed in the vicinity of the support means (4), and heating means adapted for beating the chamber (1) to a temperature greater than 1800° C.?; the input means (2) for gases containing silicon are positioned, shaped and dimensioned in a manner such that the gases containing silicon enter in a second end zone (Z2) of the chamber; the input means (3) for gases containing carbon are positioned shaped and dimensioned in a manner such that the carbon and tire silicon come substantially into contact in a central zone (ZC) of the chamber remote both from the first end zone (ZI) and from the second end zone (Z2).

Abstract: The present invention relates to a susceptor system for an apparatus of the type adapted to treat substrates and/or wafers; the susceptor system is provided with a cavity (1) which acts as a chamber for the treatment of the substrates and/or wafers and which extends in a longitudinal direction and is delimited by an upper wall (2), by a lower wall (3), by a right-hand side wall (4), and by a left-hand side wall (5); the upper wall (2) is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the lower wall (3) is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the right-hand side wall (4) is constituted by at least one piece of inert, refractory and electrically insulating material; the left-hand side wall (5) is constituted by at least one piece of inert, refractory and electrically insulating material; the piece of the upper wall (2) is thus electrically well i

Abstract: The present invention relates to a susceptor system for an apparatus for the treatment of substrates and/or wafers, provided with a treatment chamber (1) delimited by at least two walls and with at least one heating solenoid (9); the susceptor system comprises at least one susceptor element (2, 3) delimited by an outer surface and made of electrically conducting material suitable for being heated by electromagnetic induction; the susceptor element (2, 3) is hollow; a first portion of the outer surface of the susceptor element (2, 3) is suitable for acting as a wall of the treatment chamber (1); a second portion of the outer surface of the susceptor element (2, 3) is suitable for being disposed close to the heating solenoid (9).

Abstract: A tool (7) for handling a semiconductor material wafer (100) is designed to be used in an epitaxial growth station; the tool (7) comprises a disk (20) having an upper side (21) and a lower side (22), the lower side (22) being so shaped as to get in contact with the wafer (100) only along its edge (103); the disk (20) is provided internally with a suction chamber (24) that is in communication with the outside of the disk (20) through one or more suction holes (25) and in communication with a suction duct of an arm of a robot through a suction port (26); the disk (20) entirely covers the wafer (100) and the suction holes (25) open to the lower side (22)of the disk (20), whereby, when the wafer (100) is in contact with the lower side (22) of the disk (20), it can be held by the tool (7) through suction.

Abstract: The disc susceptor (1) for epitaxial growth reactors is of the type adapted to be heated by induction and is provided with an upper side (11) and with a lower side (12); at least one recess (2) adapted to house at least one corresponding substrate (3) to be subjected to epitaxial growth is formed in the upper side (11); indentations (4) such as to reduce locally the thickness of the susceptor (1) are provided on the lower side (12) in regions corresponding to the peripheral regions of the recess (2).

Abstract: A susceptor (1) for epitaxial growth reactors comprises a body (2) having a lower base (3), an upper top (4) and some substantially flat side faces (5); the side faces are adapted to receive, in predetermined areas (6), substrates on which the epitaxial growth develops; body (2) is provided with edge side regions (7) defined by couples of adjacent side faces (5); along edge side regions (7) in the upper part of body (2) there are provided first ribs (8) adapted to control the flow of reaction gases along side faces (5); along edge side regions (7) in the lower part of body (2) there are provided second ribs (9) adapted to control the flow of reaction gases along side faces (5).

Abstract: A tool (7) for handling a semiconductor material wafer (100) is designed to be used in an epitaxial growth station; the tool (7) comprises a disk (20) having an upper side (21) and a lower side (22), the lower side (22) being so shaped as to get in contact with the wafer (100) only along its edge (103); the disk (20) is provided internally with a suction chamber (24) that is in communication with the outside of the disk (20) through one or more suction holes (25) and in communication with a suction duct of an arm of a robot through a suction port (26); the disk (20) entirely covers the wafer (100) and the suction holes (25) open to the lower side (22)of the disk (20), whereby, when the wafer (100) is in contact with the lower side (22) of the disk (20), it can be held by the tool (7) through suction.

Abstract: A device for handling substrates, used in an epitaxial apparatus or reactor (20) for chemical vapour deposition (CVD) onto the said substrates, comprises an internal robot (30) provided with means (60) for gripping and transporting substrates, which are in the form of semiconductor slices (24), in order to transfer them from cassettes (38, 40) containing the semiconductor slices (24) to be processed, the gripping and transportation means (60) having precisely the task of transporting the slices (24), which are present in a purging chamber (34) and supplied from a cassette (38) for storage of the said slices (24), from the purging chamber (34) into a reaction chamber (22) of the epitaxial reactor (20) and, more particularly, into seats (28a-e) formed on a flat disk-shaped susceptor (26) which is present in the reaction chamber (22) of the epitaxial reactor (20) and vice versa, from the reaction chamber (22) again passing through the purging chamber (34), to the cassettes (38, 40).

Abstract: Chemical vapor deposition epitaxial reactor comprising two reaction chambers, each provided with a susceptor, enclosed in a bell jar, to be induction heated by an induction coil supplied by a medium frequency AC generator, and generator means for providing a medium frequency power supply to the two induction coils of both the reaction chambers, wherein the means for power supplying the two induction coils are alternatively actuated, so that when one of the reaction chambers is heated the other one is purged, loaded and/or unloaded, providing however a time overlap of 1 to 10 minutes between the heating times of the two processes. A computerized controller provides to control the medium frequency generators in accordance with a dedicated software for providing an actuating method to the specific reactor.

Abstract: Chemical vapour deposition epitaxial reactor comprising two reaction chambers, each provided with a susceptor, enclosed in a bell jar, to be induction heated by an induction coil supplied by a medium frequency AC generator, and generator means for providing a medium frequency power supply to the two induction coils of both the reaction chambers, wherein the means for power supplying the two induction coils are alternatively actuated, so that when one of the reaction chambers is heated the other one is purged, loaded and/or unloaded, providing however a time overlap of 1 to 10 minutes between the heating times of the two processes. A computerized controller provides to control the medium frequency generators in accordance with a dedicated software for providing an actuating method to the specific reactor.

Abstract: A reactor for chemical vapor deposition of epitaxial layers on crystalline substrates uses a medium frequency heating system, the power for the heating being provided by a multi-turn coil, inducing electrical currents in a susceptor of electrically conductive material, such as graphite, housed in a transparent bell jar. The internal sides of the turns of the coil are optically finished to reflect back heat to the susceptor irradiated therefrom during operation. Heating is controlled by substracting or adding reactive currents from or to different turns of the coil and through properly shaping the walls of the susceptor in order to control temperature gradients therein.