Abstract: In a light image detector, a substrate is covered with a first layer of conductive material on which is formed a two-dimensional matrix array of photodiodes in the form of pads arranged in rows and columns and each comprising a layer of amorphous semiconductor material doped with a predetermined type (n-type or p-type), a layer of undoped amorphous semiconductor material, a layer of amorphous semiconductor material doped with another predetermined type (n-type or p-type), a second layer of conductive material, each photodiode being insulated from adjacent photodiodes by means of insulating material. On the insulating material, columns of material are disposed along the columns of photodiodes and are each formed by a layer of metallic material and a layer of doped amorphous semiconductor material.

Abstract: A method of fabricating a light image detector is provided in which there are deposited on a substrate a layer of a conducting material then successively p.sup.+ doped, undoped, n.sup.+ doped, undoped, then p.sup.+ doped semiconductor layers. Then at least one column of material is etched in these layers. The in the column thus obtained, individual detectors are formed solely in the semiconductor layers. The sides of the individual detectors are then irradiated. Finally, line electrodes are deposited in contact with the upper parts of the detectors not covered with an isolating layer.

Abstract: The invention relates to a method for the manufacture of field effect transistors of the coplanar and self-aligned type, obtained in thin film form on an insulating substrate.As a result of electrode self-alignment and ion implantation, the method makes it possible to use only three masking levels.The invention is applicable to the field of large surface microelectronics and particularly to the control and addressing of a flat liquid crystal screen or an image sensor.

Abstract: A method of fabrication of a control transistor for a flat-panel display screen involves the following steps:deposition of conductive material such as ITO on a substrate;etching of electrodes in the conductive material;successive depositions of layers formed of metallic material followed by n-doped amorphous semiconductor material;etching of a column and a connecting element in contact with the electrode;successive depositions of layers formed of undoped amorphous semiconductor material followed by insulating material and then by metallic material;etching in the three layers which have just been deposited of a row which overlaps the column and the connecting element.

Abstract: The invention relates to a method for the manufacture of thin film field effect transistors of the type having self-alignment of the electrodes and obtained on an insulating substrate.The method comprises two constructional variants making it possible to produce a submicron gate electrode determining a minimum channel length.The invention is applicable to the field of large surface or area microelectronics and in particular to the control and addressing of a flat liquid crystal screen or an image sensor.