Patents by Inventor Francois Buiguez

Francois Buiguez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon-containing polymer and its use as a masking resin in a lithography process
    Patent number: 4770977
    Abstract: Photosensitive film which is photosensitive in a given wavelength range comprises at least one silicon-containing polymer, at least one salt which can be converted into a Brunsted acid by irradiation and optionally at least one photosensitizer. The silicon-containing polymer-based photosensitive film can be used as a masking resin in a lithography process for producing electronic components.
    Type: Grant
    Filed: May 7, 1987
    Date of Patent: September 13, 1988
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Francois Buiguez, Louis Giral, Charles Rosilio, Francois Schue
  • Photosensitive film based on silicon-containing polymer and its use as a masking resin in a lithography process
    Patent number: 4689288
    Abstract: Photosensitive film which is photosensitive in a given wavelength range comprises at least one silicon-containing polymer, at least one salt which can be converted into a Brunsted acid by irradiation and optionally at least one photosensitizer. The silicon-containing polymer-based photosensitive film can be used as a masking resin in a lithography process for producing electronic components.
    Type: Grant
    Filed: September 19, 1985
    Date of Patent: August 25, 1987
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Francois Buiguez, Louis Giral, Charles Rosilio, Francois Schue
  • Process for the autopositioning of a local field oxide with respect to an insulating trench
    Patent number: 4636281
    Abstract: Process for the autopositioning of a local field oxide relative to an insulating trench.This process consists of forming at least one first insulating coating on a silicon substrate, producing a second insulating coating on the first coating, anisotropically etching the first and second coating until the region of the substrate in which the trench is to be formed is exposed, forming insulating spacers on the etched flanks of the first and second coatings, anisotropically etching the substrate region in order to form the trench, the second etched coating and the spacers used as a mask for said etching, eliminating the mask, forming the insulating edges in the trench, filling said trench with a material and forming the field oxide.
    Type: Grant
    Filed: June 13, 1985
    Date of Patent: January 13, 1987
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Francois Buiguez, Joel Hartmann
  • Method and apparatus for controlling the deposition of films by reactive sputtering
    Patent number: 4124474
    Abstract: The method consists in establishing the ion bombardment parameters, in varying a regulation parameter in order to initiate deposition, in measuring at each instant the total pressure drop within the vacuum chamber with respect to the initial pressure and in controlling the total pressure drop by controllably varying the regulation parameter.
    Type: Grant
    Filed: November 3, 1977
    Date of Patent: November 7, 1978
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Guillermo Bomchil, Francois Buiguez, Sylvie Galzin, Alain Monfret, Louise Peccoud