Abstract: A micro-LED driver applies a low baseline power (i.e., a baseline voltage or current) to pre-charge a micro-LED in a nominally-off (i.e., non-light-emitting) state in addition to applying an operating driving power to drive the micro-LED in a light-emitting state. By pre-charging the micro-LED prior to applying the operating driving power, the micro-LED driver significantly decreases the time between application of the operating driving power and onset of emission of light from the micro-LED. In some embodiments, the micro-LED driver applies an operating driving power having multiple phases of current density to reduce the time between application of the operating driving power and onset of emission of light from the micro-LED.

Abstract: A beverage production system, comprising a cup dispensing station configured to dispense cups, a beverage dispensing station configured to dispense a beverage, and a turntable assembly. The turntable assembly comprising a central axis, an inner turntable including a first row of cup receptacles, and an outer turntable including a second row of cup receptacles. The outer turntable is disposed circumferentially about the inner turntable, and the outer turntable is configured to rotate about the central axis to align the cup receptacles of the second row with the cup dispensing station and the beverage dispensing station. The turntable assembly is configured to align an opening in a cup receptacle in the second row with an opening in a cup receptacle in the first row. A slide assembly includes an arm configured to slide a cup positioned in the cup receptacle in the second row into the aligned opening of the cup receptacle in the first row.

Abstract: A radio frequency reflect-array panel for satellite antenna, includes a structural support; radio frequency tiles supporting polygonal radio frequency cells configured to reflect and phase-shift incident radio frequency signals; a complete link, between the structural support and the radio frequency tile; and at least two runner-type links, between the structural support and the radio frequency tile, in the plane of the panel, of distinct axes and passing through the complete link.

Abstract: A light emitting device is described. The light emitting device includes a substrate and a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region and has a first surface adjacent the substrate and a second surface opposite the first surface. The first surface of the semiconductor structure multiple cavities formed therein, which extend into at least one of the n-type region and the p-type region. The cavities are spaced apart and lined by a dielectric layer. At least a portion of the second surface is roughened to form multiple features spaced apart at a distance smaller than a distance between each of the cavities formed in the first surface to enhance extraction of light emitted from the light emitting layer. At least one contact is disposed between the first surface of the semiconductor structure and the substrate.

Abstract: A radio frequency reflect-array panel for satellite antenna, includes a structural support; radio frequency tiles supporting polygonal radio frequency cells configured to reflect and phase-shift incident radio frequency signals; a complete link, between the structural support and the radio frequency tile; and at least two runner-type links, between the structural support and the radio frequency tile, in the plane of the panel, of distinct axes and passing through the complete link.

Abstract: Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.

Abstract: A light emitting device is described. The light emitting device includes a substrate and a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region and has a first surface adjacent the substrate and a second surface opposite the first surface. The first surface of the semiconductor structure multiple cavities formed therein, which extend into at least one of the n-type region and the p-type region. The cavities are spaced apart and lined by a dielectric layer. At least a portion of the second surface is roughened to form multiple features spaced apart at a distance smaller than a distance between each of the cavities formed in the first surface to enhance extraction of light emitted from the light emitting layer. At least one contact is disposed between the first surface of the semiconductor structure and the substrate.

Abstract: Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.

Abstract: Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.

Abstract: A light emitting device is described. The light emitting device includes a substrate and a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region and has a first surface adjacent the substrate and a second surface opposite the first surface. The first surface of the semiconductor structure multiple cavities formed therein, which extend into at least one of the n-type region and the p-type region. The cavities are spaced apart and lined by a dielectric layer. At least a portion of the second surface is roughened to form multiple features spaced apart at a distance smaller than a distance between each of the cavities formed in the first surface to enhance extraction of light emitted from the light emitting layer. At least one contact is disposed between the first surface of the semiconductor structure and the substrate.

Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.

Abstract: A light emitting device is described. The light emitting device includes a substrate and a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region and has a first surface adjacent the substrate and a second surface opposite the first surface. The first surface of the semiconductor structure multiple cavities formed therein, which extend into at least one of the n-type region and the p-type region. The cavities are spaced apart and lined by a dielectric layer. At least a portion of the second surface is roughened to form multiple features spaced apart at a distance smaller than a distance between each of the cavities formed in the first surface to enhance extraction of light emitted from the light emitting layer. At least one contact is disposed between the first surface of the semiconductor structure and the substrate.

Abstract: Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for information retrieval. In one aspect, a method includes receiving a search query in a search interface; determining that the received search query is a flights-related query; and in response to determining that the search query is a flights-related query and without further user input, providing a flight search interface including a plurality of search dimensions and a plurality of flight search results, each dimension associated with an attribute of flight search and each dimension having an associated value, wherein one or more dimension values correspond to values extracted from the search query, and wherein the plurality of flight search results are filtered according to the dimension values.

Abstract: In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant asubstrate. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant alayer and [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured.

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for information retrieval. In one aspect, a method includes receiving a search query in a search interface; determining that the received search query is a flights-related query; and in response to determining that the search query is a flights-related query and without further user input, providing a flight search interface including a plurality of search dimensions and a plurality of flight search results, each dimension associated with an attribute of flight search and each dimension having an associated value, wherein one or more dimension values correspond to values extracted from the search query, and wherein the plurality of flight search results are filtered according to the dimension values.

Abstract: In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant asubstrate. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant alayer and [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured.

Abstract: Printing apparatuses include, among other components, a media path transporting sheets of print media in a process direction. A transfer station is located at a first location of the media path, and a fusing station is located at a second location of the media path (the second location is closer to the end of the media path (in the process direction) relative to the first location). Also, a single blower is located adjacent the fusing station, and two outlets receive air from the single blower. A first outlet (of the two outlets) provides air to the transfer station to reduce the temperature of the transfer station, and a second outlet (of the two outlets) is located between the transfer station and the fusing station and directs the sheets of print media toward one side of the media path.

Abstract: An antenna with polarization switching comprises a support comprising at least two faces each supporting a plurality of waveguides fed with radiofrequency signals and pierced with apertures disposed so as to illuminate radiating elements placed some distance from the said apertures. For at least one given antenna pointing, the said support is able to toggle between at least two different configurations, the said support being configured so as to place, in the second configuration, the second face in a position identical to that taken by the first face in the first configuration, several radiating elements of the first face being, in the said position, oriented differently from radiating elements of the second face. It applies notably to the switching of antennas embedded onboard moving objects on the ground having to operate high-speed communications with a satellite, in particular a geostationary satellite.

Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.