Abstract: Arrangements are described for correcting the voltage coefficient of resistance (VCR) of resistors integral with a semiconductor body and, more particularly, for correcting the VCR of resistors implanted in a semi-conductor body. Resistors typically comprising a resistive region of a first conductivity type formed in an isolated layer of opposite conductivity type which isolated layer, in general, includes an epitaxial layer passivated by a dielectric layer. A metal layer is formed on the dielectric layer and covers, at least partially, the resistive layer. The metal layer is brought to a suitable potential to produce opposite variations in the resistance with respect to variations created by the epitaxial layer.