Patents by Inventor Francois DENEUVILLE

Francois DENEUVILLE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240128297
    Abstract: A device for acquiring a 2D image and a depth image, including: a first sensor formed in and on a first semiconductor substrate and including regions of a material distinct from that of the substrate located in an interconnect stack in line with 2D image pixels of the first r sensor; and adjoining the first sensor, a second sensor formed in and on a second semiconductor substrate and including a plurality of depth pixels located opposite the regions of the first sensor, wherein each region includes a first portion having, in top view, a smaller surface area than that of a second portion, the material of the regions having an optical index greater than or equal to that of the material of the substrate.
    Type: Application
    Filed: October 11, 2023
    Publication date: April 18, 2024
    Applicant: Commissariat à I'Énergie Atomique et aux Énergies Alternatives
    Inventors: François Deneuville, Clémence Jamin
  • Publication number: 20240079421
    Abstract: The present description concerns an image sensor formed inside and on top of a semiconductor substrate, the sensor comprising a plurality of pixels, each comprising a photodetector formed in the substrate, the sensor comprising at least first and second bidimensional metasurfaces stacked, in this order, in front of said plurality of pixels, each metasurface being formed of a bidimensional array of pads, the first metasurface having a first optical function and the second metasurface having a second optical function different from the first optical function.
    Type: Application
    Filed: March 17, 2023
    Publication date: March 7, 2024
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, STMicroelectronics (Crolles 2) SAS
    Inventors: Axel CROCHERIE, Alain OSTROVSKY, Jerome VAILLANT, Francois DENEUVILLE
  • Publication number: 20240053202
    Abstract: The present description concerns a polarimetric image sensor formed inside and on top of a semiconductor substrate, the second comprising a plurality of pixels, each comprising: —a photosensitive region formed in the semiconductor substrate; —a diffraction structure formed on the side of an illumination surface of the photosensitive region; and —a polarization structure formed on the side of the diffraction structure opposite to the photosensitive region.
    Type: Application
    Filed: March 17, 2023
    Publication date: February 15, 2024
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, STMicroelectronics (Crolles 2) SAS
    Inventors: Jerome VAILLANT, Francois DENEUVILLE, Axel CROCHERIE, Alain OSTROVSKY
  • Publication number: 20230417598
    Abstract: A system for determining an estimated degree of polarization of a radiation reflected) by a scene, including a first light source of a first electromagnetic radiation at a first frequency and rectilinearly polarized according to a first direction, a second light source of a second electromagnetic radiation at a second frequency greater than the first frequency and rectilinearly polarized according to a second direction non-parallel to the first direction, and a device of acquisition of an image of the radiation reflected by the scene including first pixels configured to capture the reflected radiation, each first pixel being covered with a rectilinear polarizer according to a third direction non-perpendicular to the first direction.
    Type: Application
    Filed: June 16, 2023
    Publication date: December 28, 2023
    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventor: François Deneuville
  • Publication number: 20230375711
    Abstract: An image sensor including a plurality of photosites formed inside and on top of a semiconductor substrate, each photosite including: a first photosensitive area formed in the semiconductor substrate and adapted to capturing light in a first wavelength range; a second photosensitive area formed in the semiconductor substrate vertically in line with the first photosensitive area and adapted to capturing light in a second wavelength range, different from the first wavelength range; a first area of collection of charges photogenerated in the first and second photosensitive areas, arranged on the side of a surface of the substrate opposite to the first photosensitive area; a first transfer gate vertically extending from the first photosensitive area to said surface, adapted to transferring the charges photogenerated in the first photosensitive area to the second photosensitive area; and a second transfer gate, horizontally extending on said surface vertically in line with the second photosensitive area, adapted to
    Type: Application
    Filed: May 17, 2023
    Publication date: November 23, 2023
    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Gaelle Palmigiani, François Deneuville, Olivier Saxod
  • Publication number: 20220093656
    Abstract: An image sensor including a plurality of pixels, each including: a photodetector semiconductor region; a metal region arranged on a first surface of the semiconductor region; a band-pass or band-stop interference filter arranged on a second surface of the semiconductor region opposite to the first surface; and between the semiconductor region and the metal region, an absorbing stack comprising, in the order from the semiconductor region, a dielectric layer, a silicon layer, and a tungsten layer.
    Type: Application
    Filed: September 16, 2021
    Publication date: March 24, 2022
    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventor: François Deneuville
  • Publication number: 20220013561
    Abstract: An image sensor including a substrate including first portions containing photodetectors adapted to capturing a radiation and second portions containing electronic components located between come of the first portions; a pixelated filter including filter pixels, at least some of which include an interference filter including a stack of planar layers; and shields reflecting or absorbing said radiation covering the second portions and including walls reflecting or absorbing said radiation extending between filter pixels along at least a portion of the height of the pixelated filter.
    Type: Application
    Filed: July 8, 2021
    Publication date: January 13, 2022
    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Quentin Abadie, François Deneuville, Lilian Masarotto, Jérôme Vaillant
  • Publication number: 20210305206
    Abstract: A device of acquisition of a 2D image and of a depth image, including: first sensor formed inside and on top of a first semiconductor substrate including a front surface and a rear surface, the first sensor including a plurality of 2D image pixels and a plurality of transmissive windows, each transmissive window including a portion of the first substrate and an amorphous silicon region in contact with the rear surface of said portion of the first substrate; and against the first sensor on the rear surface side of the first substrate, a second sensor formed inside and on top of a second semiconductor substrate and including a plurality of depth pixels arranged opposite the transmissive windows of the first sensor.
    Type: Application
    Filed: March 16, 2021
    Publication date: September 30, 2021
    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventor: François Deneuville
  • Publication number: 20160025684
    Abstract: A device for inspection of a tubular piece includes a cart including plural elemental ultrasound transducers distributed along at least a first direction and a guide which cooperates with an exterior surface of the piece to position the cart such that the first direction essentially corresponds to a direction transverse to the tubular piece. A control electronics, connected to the electroacoustic transducers, includes a memory storing the timed excitation laws and a controller that applies in succession a respective timed excitation law to subsets of mutually adjacent elemental transducers along the first direction. The timed excitation laws are designed so that the elemental transducers of the respective subsets jointly produce incident beams of ultrasonic waves propagating along respective directions inclined relative to a direction normal to the exterior surface of the tubular piece.
    Type: Application
    Filed: March 19, 2014
    Publication date: January 28, 2016
    Applicant: VALLOUREC TUBES FRANCE
    Inventor: Francois DENEUVILLE