Patents by Inventor Francois Guette

Francois Guette has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Extraction of a private datum to authenticate an integrated circuit
    Patent number: 7827413
    Abstract: A method and a circuit for extracting a secret datum from an integrated circuit taking part in an authentication procedure that uses an external device that takes this secret datum into account, the secret datum being generated on request and made ephemeral.
    Type: Grant
    Filed: April 4, 2002
    Date of Patent: November 2, 2010
    Assignee: STMicroelectronics S.A.
    Inventors: Pierre-Yvan Liardet, Luc Wuidart, François Guette
  • Extraction of a private datum to authenticate an integrated circuit
    Publication number: 20040114765
    Abstract: The invention relates to a method and a circuit for extracting a secret datum (s) from an integrated circuit involved in an authentication procedure by means of an external device that takes account of said secret datum. Said secret datum is generated upon request and made ephemeral.
    Type: Application
    Filed: February 6, 2004
    Publication date: June 17, 2004
    Inventors: Pierre-Yvan Liardet, Luc Wuidart, Francois Guette
  • Low-noise vertical bipolar transistor and corresponding fabrication process
    Patent number: 6177717
    Abstract: The intrinsic collector of a vertical bipolar transitor is grown epitaxially on an extrinsic collector layer buried in a semiconductor substrate. A lateral isolation region surrounds the upper part of the intrinsic collector and an offset extrinsic collector well is produced. An SiGe heterojunction base lying above the intrinsic collector and above the lateral isolation region is produced by non-selective epitaxy. An in-situ doped emitter is produced by epitaxy on a predetermined window in the surface of the base which lies above the intrinsic collector so as to obtain, at least above the window, an emitter region formed from single-crystal silicon and directly in contact with the silicon of the base.
    Type: Grant
    Filed: June 1, 1999
    Date of Patent: January 23, 2001
    Assignee: STMicroelectronics, S.A.
    Inventors: Alain Chantre, Michel Marty, Didier Dutartre, Augustin Monroy, Michel Laurens, Francois Guette