Abstract: The present application relates to thin film transistors having a semiconducting channel comprising a network of carbon nanotubes that are electrically coupled to a source electrode and a drain electrode and electrically insulated from, but capacitively coupled to, a gate electrode, wherein a polymeric layer encapsulates the carbon nanotubes. The polymeric layer can comprise a first monomeric unit and optionally a second monomeric unit, wherein the first monomeric unit, the second monomeric unit and the relative amounts thereof are optionally selected to provide at least one target electrical property of the thin film transistor. The present application also relates to methods for manufacturing such thin film transistors as well as a methods of selecting a polymeric layer to provide a desired threshold voltage for such thin film transistors.

Abstract: A composite material suitable for use in sensing and catalysis applications with conjugated polymers non-covalently bound to the carbon nanotubes. The conjugated polymers have alternating aromatic (Ar) units and bipyridine (BPy) units. Metal nanoparticles having a size that is between about 0.3 nm and about 5 nm are bound to the conjugated polymers at respective BPy units, thereby anchoring the metal nanoparticles to the carbon nanotubes. Thus, a metal salt solution was added into the polymer/carbon nanotube solution to form a metal-BPy complex, which is in situ photo reduced to metal nanoparticles. Therefore, the formed nanoparticles are tightly anchored to the nanotube and can be self-regenerated by room light to offer the material a high performance and durability.

Abstract: The present application relates to thin film transistors having a semiconducting channel comprising a network of carbon nanotubes that are electrically coupled to a source electrode and a drain electrode and electrically insulated from, but capacitively coupled to, a gate electrode, wherein a polymeric layer encapsulates the carbon nanotubes. The polymeric layer can comprise a first monomeric unit and optionally a second monomeric unit, wherein the first monomeric unit, the second monomeric unit and the relative amounts thereof are optionally selected to provide at least one target electrical property of the thin film transistor. The present application also relates to methods for manufacturing such thin film transistors as well as a methods of selecting a polymeric layer to provide a desired threshold voltage for such thin film transistors.