Abstract: An assembly of an active semiconductor component and of a silicon-based passive optical component includes a carrier; and the active semiconductor component and the passive optical component both arranged on the carrier. The active semiconductor component includes a first set of semiconductor layers comprising at least one first waveguide configured to guide, in a first section of the assembly, at least one first optical mode; a second set of semiconductor layers, the set being superposed and making contact with the first set of layers, and including at least one second waveguide configured to guide at least one second optical mode. At least some of the layers of the first set of layers and of the second set of layers are doped to form, in a first region of the component, a PIN diode. The at least one first waveguide and the at least one second waveguide are configured to allow evanescent coupling therebetween, in a second section of the assembly.

Abstract: An assembly of an active semiconductor component and of a silicon-based passive optical component includes a carrier; and the active semiconductor component and the passive optical component both arranged on the carrier. The active semiconductor component includes a first set of semiconductor layers comprising at least one first waveguide configured to guide, in a first section of the assembly, at least one first optical mode; a second set of semiconductor layers, the set being superposed and making contact with the first set of layers, and including at least one second waveguide configured to guide at least one second optical mode. At least some of the layers of the first set of layers and of the second set of layers are doped to form, in a first region of the component, a PIN diode. The at least one first waveguide and the at least one second waveguide are configured to allow evanescent coupling therebetween, in a second section of the assembly.

Abstract: An emitting device is intended for delivering photons with a chosen wavelength. This emitting device includes an InP substrate with a directly modulated laser arranged for generating photons modulated by a non-return-to-zero modulation to produce data to be transmitted, a passive ring resonator monolithically integrated with the directly modulated laser and having a resonance amongst several ones that is used for filtering a zero level induced by the data modulation, and a tuning means arranged along the directly modulated laser and/or around the ring resonator to tune the photon wavelength and/or the ring resonator resonance used for filtering.

Abstract: An optical filtering device (1) comprising: a ring resonator (2); and a multimode interference coupler (3) comprising two inputs (4, 7), two outputs (5, 8) and a multimode waveguide (9) connecting the two inputs to the two outputs, the coupler having a first input (4) serving as an input for the filtering device and able to receive an input optical signal (10), and a first output (5) corresponding to the output of the filtering device and able to produce an output optical signal (12), the ring resonator (2) being arranged so as to connect a second output (8) of the coupler to a second input (7) of the coupler, wherein the filtering device comprises a tuning element (6) able to modify locally the refractive index in the coupling zone (11) of said multimode waveguide (9) in order to vary a coupling coefficient between the coupler (3) and the ring resonator (2).

Abstract: An optical filtering device (1) comprising: a ring resonator (2); and a multimode interference coupler (3) comprising two inputs (4, 7), two outputs (5, 8) and a multimode waveguide (9) connecting the two inputs to the two outputs, the coupler having a first input (4) serving as an input for the filtering device and able to receive an input optical signal (10), and a first output (5) corresponding to the output of the filtering device and able to produce an output optical signal (12), the ring resonator (2) being arranged so as to connect a second output (8) of the coupler to a second input (7) of the coupler, wherein the filtering device comprises a tuning element (6) able to modify locally the refractive index in the coupling zone (11) of said multimode waveguide (9) in order to vary a coupling coefficient between the coupler (3) and the ring resonator (2).

Abstract: A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a deep ridge optical receiver comprising such structure are disclosed.

Abstract: A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a deep ridge optical receiver comprising such structure are disclosed.

Abstract: Method of manufacturing an optical device, and an optical device, the optical device having one or more layers (13) of quantum-dots located in-between barrier layers (12). A spacer layer (15) is grown on a barrier layer (12), such that the spacer layer (15) is adapted for substantially blocking strain fields induced by quantum-dot layers, thereby producing a smooth growth front for a subsequent barrier layer (12).

Abstract: The general field of the invention is that of tunable semiconductor devices with distributed Bragg grating, and more particularly that of tunable lasers with distributed Bragg grating termed DBRs. The device according to the invention comprises a passive Bragg section comprising a material whose optical index variations are controlled by an injection current, said material of the Bragg section is a strained bulk material, the strain applied to the bulk material being equal to at least 0.1%.

Abstract: Method of manufacturing an optical device, and an optical device, the optical device having one or more layers (13) of quantum-dots located in-between barrier layers (12). A spacer layer (15) is grown on a barrier layer (12), such that the spacer layer (15) is adapted for substantially blocking strain fields induced by quantum-dot layers, thereby producing a smooth growth front for a subsequent barrier layer (12).