Patents by Inventor Francois Weiss

Francois Weiss has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150162470
    Abstract: The invention relates to a structure adapted for the formation of solar cells, comprising the following successive elements, namely: a sheet (1) of textured metal with crystal grains having an average size greater than 50 ?m, said sheet being adapted to form a rear face electrode of the cells; a diffusion barrier layer (2) having a thickness of between 0.2 and 2 ?m, made from an electrically conductive material with crystal grains having an average size greater than 50 ?m; and a doped multicrystalline silicon layer (3) having a thickness of between 30 and 100 ?m, with crystal grains having an average size greater than 50 to 100 ?m, in which the average diffusion length of the carriers is greater than 50 ?m.
    Type: Application
    Filed: January 30, 2012
    Publication date: June 11, 2015
    Applicants: Institut Polytechnique De Grenoble, Center National De La Recherche Scientifique
    Inventors: Guy Chichignoud, Elisabeth Blanquet, Isabelle Gelard, Carmen Jimenez, Eirini Sarigiannidou, Kader Zaidat, Francois Weiss, Michel Pons
  • Publication number: 20050233910
    Abstract: The invention relates to a method of preparing thick films of YBa2Cu3O7-y(y=0.08) having a critical current density of the order of 106 A/cm2. The inventive method comprises using an inert carrier gas to send an aerosol, obtained from an aqueous solution of precursors of yttrium nitrate, barium nitrate and copper nitrate (0.11=FY=0.28, 0.46=FBa=0.58, 0.2=FCu=0.37), having a concentration which is essentially equal to the concentration at saturation, to the surface of a heated substrate whereon it undergoes pyrolysis for between 1 and 5 nm at 800° C. and 870° C., followed by oxygen annealing at a temperature which is greater than the pyrolysis temperature by at least 10° C. and between 850° C. and 880° C. for between 1 and 2 hours, and subsequently at 450° C.-550° C. for between 0.5 and 1.5 hours.
    Type: Application
    Filed: April 18, 2003
    Publication date: October 20, 2005
    Inventors: Philippe Odier, Supardi Zainul, Francois Weiss
  • Patent number: 5945162
    Abstract: A method is disclosed for introducing into a chemical vapor deposition chamber precursors of elements to be deposited over a heated substrate. The method comprises the steps of maintaining one or more precursors in liquid form or in solution at a pressure higher than the pressure of the chamber; injecting periodically and under control in the deposition chamber precursor droplets each of the droplets having a controllable volume; volatizing the injected precursor droplets to produce evaporated precursors, and conveying toward the substrate the evaporated precursors at a temperature and pressure of the chamber, whereby the evaporated precursors react to produce the elements deposited onto the substrate.
    Type: Grant
    Filed: June 17, 1996
    Date of Patent: August 31, 1999
    Assignee: Centre National de la Recherche Scientifique
    Inventors: Jean-Pierre Senateur, Roland Madar, Francois Weiss, Olivier Thomas, Adulfas Abrutis