Abstract: A branchline coupler structure having a pair of main transmission lines disposed on different horizontal levels of a support structure and a pair of shunt transmission lines, vertically disposed and laterally spaced, and disposed in the support structure. A first one of the pair of shunt transmission lines is coupled between: one region of a first one of the pair of main transmission lines and a first end of a second one of the pair of main transmission line. A second one of the pair of shunt transmission lines is coupled between a second region of the first one of the pair of main transmission lines, laterally spaced from the first region, and a second end of the second one of the main transmission lines.

Abstract: A branchline coupler structure having a pair of main transmission lines disposed on different horizontal levels of a support structure and a pair of shunt transmission lines, vertically disposed and laterally spaced, and disposed in the support structure. A first one of the pair of shunt transmission lines is coupled between: one region of a first one of the pair of main transmission lines and a first end of a second one of the pair of main transmission line. A second one of the pair of shunt transmission lines is coupled between a second region of the first one of the pair of main transmission lines, laterally spaced from the first region, and a second end of the second one of the main transmission lines.

Abstract: A selective frequency limiter having a magnetic material and a slow wave structure disposed to magnetically couple a magnetic field, produced by electromagnetic energy propagating through the slow wave structure, into the magnetic material.

Abstract: A selective frequency limiter having a magnetic material and a slow wave structure disposed to magnetically couple a magnetic field, produced by electromagnetic energy propagating through the slow wave structure, into the magnetic material.

Abstract: A structure having a coplanar waveguide transistor; and a microwave section, coupled to the transistor, having: a strip conductor coplanar with the electrodes of the coplanar waveguide transistor and a ground plane conductor disposed under the strip conductor.

Abstract: A MMIC having: a substrate; a plurality of active and passive electrical elements disposed on a top surface of the substrate; a plurality of coplanar waveguide transmission line sections disposed on the top surface of the substrate for electrically interconnecting the active and passive electrical elements; an electrical conductor disposed on a bottom surface of the substrate under the coplanar waveguide section. Edges of ground plane conductors of the coplanar waveguide (CPW) sections have slots therein in regions thereof connected to the active and passive devices. The design of such circuit includes mathematical models of the CPW with the pair of local ground planes and the strip conductor thereof have relatively narrow connectable ports.

Abstract: A MMIC having: a substrate; a plurality of active and passive electrical elements disposed on a top surface of the substrate; a plurality of coplanar waveguide transmission line sections disposed on the top surface of the substrate for electrically interconnecting the active and passive electrical elements; an electrical conductor disposed on a bottom surface of the substrate under the coplanar waveguide section. Edges of ground plane conductors of the coplanar waveguide (CPW) sections have slots therein in regions thereof connected to the active and passive devices. The design of such circuit includes mathematical models of the CPW with the pair of local ground planes and the strip conductor thereof have relatively narrow connectable ports.

Abstract: A method for packaging a semiconductor device. The method includes: providing a dielectric layer over the semiconductor device; determining patterns and placement of material on the dielectric layer to provide a predetermined magnetic or electric effect for the device, such effects being provided on the device from such patterned and placed material solely by electrical or magnetic waves coupled between such material and the device; and forming the material in the determined patterns and placement to provide the predetermined effects.

Abstract: A structure having a coplanar waveguide transistor; and a microwave section, coupled to the transistor, having: a strip conductor coplanar with the electrodes of the coplanar waveguide transistor and a ground plane conductor disposed under the strip conductor.

Abstract: A method for packaging a semiconductor device. The method includes: providing a dielectric layer over the semiconductor device; determining patterns and placement of material on the dielectric layer to provide a predetermined magnetic or electric effect for the device, such effects being provided on the device from such patterned and placed material solely by electrical or magnetic waves coupled between such material and the device; and forming the material in the determined patterns and placement to provide the predetermined effects.

Abstract: A method for packaging a semiconductor device. The method includes: providing a dielectric layer over the semiconductor device; determining patterns and placement of material on the dielectric layer to provide a predetermined magnetic or electric effect for the device, such effects being provided on the device from such patterned and placed material solely by electrical or magnetic waves coupled between such material and the device; and forming the material in the determined patterns and placement to provide the predetermined effects.

Abstract: A variable attenuator having: an input port; a semiconductor device having a control electrode for controlling carriers flowing between a first electrode and a second electrode, such control electrode being coupled to one of the first and second electrodes, one of the first and second electrodes being coupled to the input port and the other one of the first and second electrodes being coupled to a reference potential to form an active device characterized by such device having a resistivity in the device to the flow of carriers substantially constant when such device is fed through input port with a signal having a relatively small power level and having a resistivity in the device to the flow of carriers which is nonlinear when such device is fed through input port with a signal having a relatively large power level; and an output port coupled to one of the first and second electrodes coupled to the input port.

Abstract: A method for packaging a semiconductor device. The method includes: providing a dielectric layer over the semiconductor device; determining patterns and placement of material on the dielectric layer to provide a predetermined magnetic or electric effect for the device, such effects being provided on the device from such patterned and placed material solely by electrical or magnetic waves coupled between such material and the device; and forming the material in the determined patterns and placement to provide the predetermined effects.