Patents by Inventor Francoise Hebert

Francoise Hebert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-voltage transistor fabrication with trench etching technique
    Publication number: 20060261407
    Abstract: A lateral high-voltage depletion-mode device structure in which fingers of semiconductor material are interdigitated with trench gates. Since the effective channel area is proportional to the depth of the trenches, a large amount of active channel area can be achieved for a given surface area.
    Type: Application
    Filed: November 9, 2005
    Publication date: November 23, 2006
    Inventors: Richard Blanchard, Francoise Hebert