Abstract: Electrochromic devices are disclosed which may be used for large surface area applications. The devices utilize optical tuning to minimize optical interference between layers of the structure and to maximize uniform optical transparency. Optical tuning also enables transparent conductive oxide layers to be replaced by thin conductive metal layers, thereby reducing the overall thickness of these devices and facilitating the manufacturing process.

Abstract: Electrochromic devices are disclosed which may be used for large surface area applications. The devices utilize optical tuning to minimize optical interference between layers of the structure and to maximize uniform optical transparency. Optical tuning also enables transparent conductive oxide layers to be replaced by thin conductive metal layers, thereby reducing the overall thickness of these devices and facilitating the manufacturing process.

Abstract: Apparatus and method for forming a metal oxide film on a glass substrate in which ambient air and particularly water vapor is prevented from reaching the initial nucleation site by injection of dry gas at a point such that ambient air is excluded from the area around the upstream edge of the injector where the film first starts to be formed. Crystal growth inhibiting gas is injected so as to reach only the initial nucleation site to improve the nucleation process, thereby improving film properties without decreasing the overall film thickness. Application of the above methods in the deposition of tin oxide yields improved haze control of the tin oxide film, including very low haze coatings.

Abstract: Apparatus and method for forming a metal oxide film on a glass substrate in which ambient air and particularly water vapor is prevented from reaching the initial nucleation site by injection of dry gas at a point such that ambient air is excluded from the area around the upstream edge of the injector where the film first starts to be formed. Crystal growth inhibiting gas is injected so as to reach only the initial nucleation site to improve the nucleation process, thereby improving film properties without decreasing the overall film thickness. Application of the above methods in the deposition of tin oxide yields improved haze control of the tin oxide film, including very low haze coatings.

Abstract: The invention provides for placing a material to be scribed in a gaseous atmosphere and contacting the surface of the material with a non-cutting heated tip. The heated tip is rounded to prevent cutting and is moved relative to the material. The tip is heated during the scribing operation, either continuously at a prescribed level, or discontinuously in order to maintain the average temperature at a prescribed level.

Abstract: A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.

Abstract: A semiconductor device in which particles of semiconductive material extend as separate chains from respective first and second contacts. When one of the contacts is of p-type material, the conductive materials that extend from it are of likewise p-material. Similarly, when the contact is of n-type material, the chain that extends from it is also of n-material. In any case the particles can include both p-type and n-type. One of the contacts can have a prescribed work function and the other contact have a lower work function in order to produce a prescribed junction between the two contacts. In addition the contacts may be polymeric. The particulate bodies may range in size from 10 to about 3000 angstroms in diameter. The n-type particles provide a continuous path for electrons and the p-type particles provide a continuous path for holes. The particles are adhered to one another by an inorganic or organic binder, pressure, heat treatment or thermal fusion.