Abstract: The invention is directed to a method for polishing a surface comprising tungsten carbide, comprising contacting a surface comprising tungsten carbide with an oxidizing agent, a polishing component, and a liquid carrier, and abrading at least a portion of the surface to polish the surface. The invention further provides a method for reconditioning a workpiece comprising tungsten carbide. The invention also provides a cutting tool insert having a highly polished surface.

Abstract: The invention is directed to a method for polishing a surface comprising tungsten carbide, comprising contacting a surface comprising tungsten carbide with an oxidizing agent, a polishing component, and a liquid carrier, and abrading at least a portion of the surface to polish the surface. The invention further provides a method for reconditioning a workpiece comprising tungsten carbide. The invention also provides a cutting tool insert having a highly polished surface.

Abstract: Copper or a copper alloy is removed by chemical-mechanical planarization (CMP) in a slurry of an oxidizer, an oxidation inhibitor, and an additive that appreciably regulates copper complexing with the oxidation inhibitor.

Abstract: A polishing pad for polishing a semiconductor wafer which includes an open-celled, porous substrate having sintered particles of synthetic resin. The porous substrate is a uniform, continuous and tortuous interconnected network of capillary passage. The pores of the porous substrate have an average pore diameter of from about 5 to about 100 microns which enhances pad polishing performance.

Abstract: A polishing pad for polishing a semiconductor wafer which includes an open-celled, porous substrate having sintered particles of synthetic resin. The porous substrate is a uniform, continuous and tortuous interconnected network of capillary passage.

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps;obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; andcontacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt.The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

Abstract: An insoluble electron beam positive polyimide having the formula ##STR1## can be exposed by an electron beam to render the exposed areas soluble. The exposed areas can then be dissolved using a solvent to leave the pattern which can be used directly as an insulator layer in a semiconductor device.

Abstract: An insoluble photosensitive polyimide having the formula ##STR1## can be exposed by a pattern of light to render the exposed areas soluble. The exposed areas can then be dissolved using a solvent to leave the pattern which can be used directly as an insulator layer in a semiconductor device. A process for preparing the photosensitive soluble polyimide utilizes maleic anhydride which is irradiated by ultraviolet light to form a cyclobutane unit which is reacted with oxydianiline to form polymic acid. The polymic acid is cured using heat into the photosensitive soluble polyimide.

Abstract: The present invention discloses a method of forming fine conductive lines, patterns, and connectors, and is particularly useful in the formation of electronic devices. The method comprises a series of steps in which: a polymeric material is applied to a substrate; the polymeric material is patterned to form openings through, spaces within, or combinations thereof in the polymeric material; subsequently, conductive material is applied to the patterned polymeric material, so that it at least fills the openings and spaces existing in the polymeric material; and excess conductive material is removed from the exterior major surface of the polymeric material using chemical-mechanical polishing, to expose at least the exterior major surface of the polymeric material.

Abstract: A method is provided for providing a polystyrene-tetrathiafulvalene (PSTTF)/deep-ultraviolet hydrid system which combines the advantages of E-beam or X-ray lithography systems with those of deep-UV conformable printing to produce low bias, high aspect ratio resist images over the topography of microelectronic devices.

Abstract: The invention relates to high resolution video storage disks comprising a substrate having disposed thereon a film of a monofunctionalized substituted tetraheterofulvalene compound and a halocarbon. The tetraheterofulvalene compound can have the molecular formula ##STR1## where X can be S and/or Se R can be an alkyl group having from about 1 to about 8 carbon atoms or a benzyl group wherein said benzyl group can be a part of a polymer chain;and Y can be either an ester or an ether.

Abstract: A method for controlling the etch rate of a quaternary etchant comprising ethylene diamine, water, pyrocatechol and a diazine. The etching rate is catalyzed and controlled by controlling the amount of the diazine present in the etchant. A method for the controlled etching of silicon is also disclosed.

Abstract: This invention is concerned with a reversible electrochromic display device wherein its electrochromic activity is derived from an electrochromic active molecules which are attached to a porous polymeric resin.