Abstract: A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include temperature compensation layers (TCL) that improve the device TCF. These layers can be thin layers of oxide type materials and can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, between two or more piezoelectric layers, and any combination thereof. In an example, the TCLs can be configured from thick passivation layers overlying the top electrode and/or underlying the bottom electrode.

Abstract: A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include temperature compensation layers (TCL) that improve the device TCF. These layers can be thin layers of oxide type materials and can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, between two or more piezoelectric layers, and any combination thereof. In an example, the TCLs can be configured from thick passivation layers overlying the top electrode and/or underlying the bottom electrode.

Abstract: A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include temperature compensation layers (TCL) that improve the device TCF. These layers can be thin layers of oxide type materials and can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, between two or more piezoelectric layers, and any combination thereof. In an example, the TCLs can be configured from thick passivation layers overlying the top electrode and/or underlying the bottom electrode.

Abstract: An microelectronic device includes a substrate, a piezoelectric component formed over the substrate, at least one trench formed in the substrate. The piezoelectric component has a corresponding resonance frequency. The at least one trench is configured to reduce mechanical stress on the piezoelectric component, in response to force applied to the substrate, for stabilizing the resonance frequency.

Abstract: An acoustic resonator structure comprises: a substrate having a cavity, which has a plurality of sides; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode and extending over at least one of the sides; and a second electrode disposed over the piezoelectric layer, an overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR. The active area of the FBAR is completely suspended over the cavity.

Abstract: An acoustic resonator structure comprises: a substrate having a cavity, which has a plurality of sides; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode and extending over at least one of the sides; and a second electrode disposed over the piezoelectric layer, an overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR. The active area of the FBAR is completely suspended over the cavity.

Abstract: An acoustic resonator comprises: an acoustic resonator device comprises: a composite first electrode disposed over a substrate, the composite first electrode comprising: a first electrically conductive layer provided over the substrate; a first interlayer disposed on the first electrical conductive layer; a buried temperature compensation layer disposed over the first interlayer; a second interlayer disposed over the temperature compensation layer; a second electrically conductive layer disposed over the second interlayer, a piezoelectric layer disposed over the composite first electrode; and a second electrode disposed over the piezoelectric layer.

Abstract: An microelectronic device includes a substrate, a piezoelectric component formed over the substrate, at least one trench formed in the substrate. The piezoelectric component has a corresponding resonance frequency. The at least one trench is configured to reduce mechanical stress on the piezoelectric component, in response to force applied to the substrate, for stabilizing the resonance frequency.

Abstract: An acoustic resonator structure comprises: a substrate having a cavity, which has a plurality of sides; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode and extending over at least one of the sides; and a second electrode disposed over the piezoelectric layer, an overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR. The active area of the FBAR is completely suspended over the cavity.

Abstract: An acoustic resonator comprises: an acoustic resonator device comprises: a composite first electrode disposed over a substrate, the composite first electrode comprising: a first electrically conductive layer provided over the substrate; a first interlayer disposed on the first electrical conductive layer; a buried temperature compensation layer disposed over the first interlayer; a second interlayer disposed over the temperature compensation layer; a second electrically conductive layer disposed over the second interlayer, a piezoelectric layer disposed over the composite first electrode; and a second electrode disposed over the piezoelectric layer.

Abstract: According to an exemplary embodiment, a bulk acoustic wave (BAW) resonator includes a piezoelectric layer having a disrupted texture region, where the disrupted texture region is situated in a controlled thickness region of the BAW resonator. The BAW resonator further includes lower and upper electrodes situated on opposite surfaces of the piezoelectric layer. The controlled thickness region has controlled electromechanical coupling and includes a segment of material situated over the upper electrode. The segment of material can be a metal or a dielectric material. The disrupted texture region can be situated at an edge of the BAW resonator and can extend along a perimeter of the BAW resonator.

Abstract: According to an exemplary embodiment, a bulk acoustic wave (BAW) resonator includes a piezoelectric layer having a disrupted texture region, where the disrupted texture region is situated in a controlled thickness region of the BAW resonator. The BAW resonator further includes lower and upper electrodes situated on opposite surfaces of the piezoelectric layer. The controlled thickness region has controlled electromechanical coupling and includes a segment of material situated over the upper electrode. The segment of material can be a metal or a dielectric material. The disrupted texture region can be situated at an edge of the BAW resonator and can extend along a perimeter of the BAW resonator.

Abstract: According to an exemplary embodiment, a bulk acoustic wave (BAW) resonator includes a piezoelectric layer situated between upper and lower electrodes, where each of the upper and lower electrodes are a high density metal. The BAW resonator further includes a controlled thickness region including a low density metal segment, where the low density metal segment is situated adjacent to the piezoelectric layer, and where the controlled thickness region has controlled electromechanical coupling. The controlled thickness region can provide reduced electromechanical coupling into lateral modes. The low density metal segment can extend along the perimeter of the BAW resonator.

Abstract: According to an exemplary embodiment, a bulk acoustic wave (BAW) resonator includes a piezoelectric layer situated between upper and lower electrodes, where each of the upper and lower electrodes are a high density metal. The BAW resonator further includes a controlled thickness region including a low density metal segment, where the low density metal segment is situated adjacent to the piezoelectric layer, and where the controlled thickness region has controlled electromechanical coupling. The controlled thickness region can provide reduced electromechanical coupling into lateral modes. The low density metal segment can extend along the perimeter of the BAW resonator.