Patents by Inventor Frank Cardone

Frank Cardone has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Abrupt “delta-like” doping in Si and SiGe films by UHV-CVD
    Patent number: 7906413
    Abstract: A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×1019 atoms/cc, and a second epitaxial layer having a change in concentration in its first 40 from the first layer of greater than 1×1019 P atoms/cc. Alternatively, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.
    Type: Grant
    Filed: April 28, 2006
    Date of Patent: March 15, 2011
    Assignee: International Business Machines Corporation
    Inventors: Frank Cardone, Jack Oon Chu, Khalid EzzEldin Ismail
  • Abrupt "delta-like" doping in Si and SiGe films by UHV-CVD
    Publication number: 20060194422
    Abstract: A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×1019 atoms/cc, and a second epitaxial layer having a change in concentration in its first 40 OE from the first layer of greater than 1×1019 P atoms/cc. Alternatively, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.
    Type: Application
    Filed: April 28, 2006
    Publication date: August 31, 2006
    Applicant: International Business Machines Corporation
    Inventors: Frank Cardone, Jack Chu, Khalid Ismail
  • Semiconductor structure having an abrupt doping profile
    Patent number: 7067855
    Abstract: A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×1019 atoms/cc, and a second epitaxial layer having a change in concentration in its first 40 ? from the first layer of greater than 1×1019 P atoms/cc. Alternatively, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET'S, and HBT's.
    Type: Grant
    Filed: December 12, 2003
    Date of Patent: June 27, 2006
    Assignee: International Business Machines Corporation
    Inventors: Frank Cardone, Jack Oon Chu, Khalid EzzEldin Ismail
  • Abrupt "delta-like" doping in Si and SiGe films by UHV-CVD
    Publication number: 20040185640
    Abstract: A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×1019 atoms/cc, and a second epitaxial layer having a change in concentration in its first 40 Å from the first layer of greater than 1×1019 P atoms/cc. Alternatively, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET'S, and HBT's.
    Type: Application
    Filed: December 12, 2003
    Publication date: September 23, 2004
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Frank Cardone, Jack Oon Chu, Khalid EzzEldin Ismail
  • Abrupt delta-like doping in Si and SiGe films by UHV-CVD
    Patent number: 6723621
    Abstract: A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×1019 atoms/cc, and a second epitaxial layer having a change in concentration in its first 40 Å from the first layer of greater than 1×1019 P atoms/cc. Alternatively, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.
    Type: Grant
    Filed: June 30, 1997
    Date of Patent: April 20, 2004
    Assignee: International Business Machines Corporation
    Inventors: Frank Cardone, Jack Oon Chu, Khalid EzzEldin Ismail