Abstract: A cleaning tool for simultaneously abrading a contaminated surface and collecting contaminating particles and a method for using the same is provided the cleaning tool including an abrasive member including an abrasive surface said abrasive surface including a recessed area forming a collection space; said collection space in gaseous communication with at least one gaseous pathway; said at least one gaseous pathway passing longitudinally through a rotatably adjustable elongated handle rotatably attached to the abrasive member for adjustably varying an orientation angle defined by the elongated handle and the abrasive surface; whereby a suction force may be applied along the at least one gaseous pathway to collect particles loosened by the abrasive surface through the collection space.

Abstract: A cleaning tool for simultaneously abrading a contaminated surface and collecting contaminating particles and a method for using the same is provided the cleaning tool including an elongated handle having a first gaseous pathway formed along an axis therein, said elongated handle rotatably attached according to a rotating means to an abrasive means for abrading a target cleaning surface, said rotating means for rotating the elongated handle to form an orientation angle with respect to an abrasive means surface, the abrasive means surface including a suction opening forming gaseous communication with a first gaseous pathway formed through the abrasive means to gaseously communicate with the second gaseous pathway for supplying a vacuum suction force to the abrasive means surface.

Abstract: A method for manufacturing a flash memory device with dual floating gates is disclosed. The method use a self-align etching technique to form dual floating gates by using dual spacers as masks. First of all, a semiconductor substrate having a first insulating layer thereon and a first conductive layer formed over the first insulating layer is provided. Then a second insulating layer is formed and patterned to etch to form a trench therein. Next a dielectric layer is deposited and anisotropically etched to form dual spacers in the trench. After removing the second insulating layer, etching the first conductive layer to expose the first insulating layer, and removing the spacers sequentially, dual floating gates are formed.