Patents by Inventor Frank D. Tamweber, JR.

Frank D. Tamweber, JR. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8765491
    Abstract: A method of forming a semiconductor device includes forming a spacer layer over a plurality of transistor gate structures, the transistor gate structures being formed over both active and shallow trench isolation (STI) regions of a substrate. The spacer layer is subjected to a directional etch so as to form sidewall spacers adjacent the plurality of transistor gate structures, and a horizontal fill portion of the spacer layer remains in one more recesses present in the STI regions so as to substantially planarize the STI region prior to subsequent material deposition thereon.
    Type: Grant
    Filed: October 28, 2010
    Date of Patent: July 1, 2014
    Assignee: International Business Machines Corporation
    Inventors: Ming Cai, Xi Li, Frank D. Tamweber, Jr.
  • Publication number: 20120104500
    Abstract: A method of forming a semiconductor device includes forming a spacer layer over a plurality of transistor gate structures, the transistor gate structures being formed over both active and shallow trench isolation (STI) regions of a substrate. The spacer layer is subjected to a directional etch so as to form sidewall spacers adjacent the plurality of transistor gate structures, and a horizontal fill portion of the spacer layer remains in one more recesses present in the STI regions so as to substantially planarize the STI region prior to subsequent material deposition thereon.
    Type: Application
    Filed: October 28, 2010
    Publication date: May 3, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ming Cai, Xi Li, Frank D. Tamweber, JR.