Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

Abstract: A stacked integrated multi-junction solar cell, having a first subcell, whereby the first subcell has a layer of an InGaP compound with a first lattice constant and a first band gap energy, and the thickness of the layer is greater than 100 nm and the layer is formed as part of an emitter and/or as part of the base and/or as part of the space charge region lying between the emitter and base, and a second subcell with a second lattice constant and a second band gap energy, and a third subcell with a third lattice constant and a third band gap energy, and a fourth subcell with a fourth lattice constant and a fourth band gap energy, and a region with a wafer bond is formed between two subcells.

Abstract: The invention relates to a photovoltaic concentrator module with multifunction frame and also to a method for production thereof. The concentrator module has a lens- and a base plate, between which a frame extends. Between the lens plate and the frame and/or the base plate and the frame, two sealing compounds and/or adhesive compounds extend, which compounds differ with respect to their hardening time and/or gas permeability.

Abstract: This disclosure relates to a solar cell assembly structure for supporting a concentrator photovoltaic cell structure (3420), comprising a semiconducting structure and a diode, wherein the semiconducting structure comprises a first semiconducting region at least a part of which for placing the concentrator photovoltaic cell structure, and a second semiconducting region for realizing the diode within or on the second semiconducting region and wherein the part of the first semiconducting region for placing the concentrator photovoltaic cell structure and the second semiconducting region are not vertically overlapping.

Abstract: This disclosure is related to a manufacturing method for a plurality of photovoltaic cells comprising the steps of: obtaining a plurality of photovoltaic cells placed at a first distance from each other; attaching a stretching material to the plurality of photovoltaic cells; and stretching the stretching material such that the plurality of photovoltaic cells result at a second distance from each other, wherein the second distance is greater that the first distance.

Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

Abstract: A multi-junction solar cell having at least three p-n junctions is proposed, which comprises a rear-side subcell comprising GaSb, which has at least one p-n junction, and a front-side subcell which has at least two p-n junctions and which is characterised in that the rear-side subcell has a ?2%, in particular >4%, larger lattice constant than the front-side subcell and the two subcells are connected to each other via an optically transparent and electrically conductive wafer-bond connection. The multi-junction solar cell achieves a high absorption up to the band gap energy of the lowermost GaSb-comprising subcell and a photoelectric voltage which is increased relative to multi-junction solar cells from the state of the art. Furthermore, methods for the production of the multi-junction solar cell according to the invention are presented and uses of the multi-junction solar cell according to the invention are indicated.

Abstract: The invention relates to a semiconductor component that has an improved hardness buffer compared to the prior art. Lower penetrating dislocation densities are achieved thereby, especially for buffer layers having an increasing lattice constant. The semiconductor component according to the invention can be a solar cell. In this case a substantially higher efficiency of the solar cell is observed compared to conventional solar cells, thanks to the improved hardness buffer. The invention further relates to the use of the semiconductor component according to the invention or of the multiple solar cell according to the invention for energy generation in satellites in space or in terrestrial photovoltaic concentrator systems.

Abstract: The present disclosure relates to a method for manufacturing a multi-junction solar cell device comprising the steps of: providing a first substrate with a lower surface and an upper surface; providing a second substrate with a lower surface and an upper surface; bonding the first substrate to the second substrate at the upper surface of the first substrate and the lower surface of the second substrate; and subsequently forming at least one first solar cell layer on the lower surface of the first substrate and at least one second solar cell layer at the upper surface of the second substrate.

Abstract: The present disclosure relates to a method for manufacturing a multi-junction solar cell device comprising the steps of: providing a first engineered substrate; providing a second substrate; forming at least one first solar cell layer on the first engineered substrate to obtain a first wafer structure; forming at least one second solar cell layer on the second substrate to obtain a second wafer structure; bonding the first wafer structure to the second wafer structure; detaching the first engineered substrate; removing the second substrate; and bonding a third substrate to the at least one first solar cell layer.

Abstract: The present disclosure relates to a method for manufacturing a multi-junction solar cell device comprising the steps of: providing a final base substrate; providing a first engineered substrate comprising a first zipper layer and a first seed layer; providing a second substrate; transferring the first seed layer to the final base substrate; forming at least one first solar cell layer on the first seed layer after transferring the first seed layer to the final base substrate, thereby obtaining a first wafer structure; forming at least one second solar cell layer on the second substrate, thereby obtaining a second wafer structure; and bonding the first and the second wafer structure to each other.

Abstract: The present invention relates to a multi junction solar cell having at least four p-n junctions. The individual subcells thereby have band gaps of 1.9 eV, 1.4 eV, 1.0 eV and 0.7 eV. The multi junction solar cells according to the invention are used in space and also in terrestrial concentrator systems.

Abstract: The present disclosure relates to a method for manufacturing a multi-junction solar cell device comprising the steps of: providing a first substrate, providing a second substrate having a lower surface and an upper surface, forming at least one first solar cell layer on the first substrate to obtain a first wafer structure, forming at least one second solar cell layer on the upper surface of the second substrate to obtain a second wafer structure, and bonding the first wafer structure to the second wafer structure, wherein the at least one first solar cell layer is bonded to the lower surface of the second substrate and removing the first substrate.

Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

Abstract: A solar cell module and a method for the production thereof, are used in particular in the field of concentrating solar technology. The solar cell module has a large number of two-dimensionally disposed solar cells. These solar cells are applied on a substrate which is coated with a metal layer on the surface orientated towards the solar cells. The metal layer is thereby structured in such a manner that it is subdivided into individual two-dimensional portions which are assigned respectively to one solar cell. The metal layer in each of the portions has two regions which are electrically insulated from each other, the first region extending under the assigned solar cell and contacting the latter in an electrically conductive manner. The second region is likewise connected to the other electrical contact of the solar cell.

Abstract: The invention relates to semiconductor components, in particular solar cells made of III-V compound semiconductors, as are used in terrestrial PV concentrator systems or for electrical energy supply in satellites. However it is also used in other optoelectronic components, such as lasers and light diodes, where either high tunnel current densities are necessary or special materials are used and where stress in the entire structure is not desired.

Abstract: The invention relates to a semiconductor component which contains one semiconductor layer containing germanium. On the rear-side, i.e. on the side orientated away from the incident light, the semiconductor layer has at least one layer containing silicon carbide which serves, on the one hand, for the reflection of radiation and also as rear-side passivation or as diffusion barrier. A method for the production of semiconductor components of this type is likewise described. The semiconductor components according to the invention are used in particular as thermophotovoltaic cells or multiple solar cells based on germanium.