Abstract: An organic substrate capable of providing effective heat transfer through its entire thickness by the use of parallel, linear common thermally conductive openings that extend through the substrate, the substrate having thin dielectric layers bonded together to form an integral substrate structure. The structure is adapted for assisting in providing cooling of high temperature electrical components on one side by effectively transferring heat from the components to a cooling structure positioned on an opposing side. Methods of making the substrate are also provided, as is an electrical assembly including the substrate, component and cooling structure.

Abstract: A method of forming a compressible contact structure on a semi-conductor chip which comprises bonding a compressible polymer layer to the chip's surface, forming a plurality of openings within the layer, depositing electrically conductive material within the openings to form electrical connections with the chip's contacts, forming a plurality of electrically conductive line elements on the polymer layer extending from a respective opening and each including an end portion, and forming a plurality of contact members each on a respective one of the line segment end portions. The compressible polymer layer allows the contact members to deflect toward (compress) the chip when the contact members are engaged by an external force or forces. A semi-conductor chip including such a compressible contact structure is also provided.

Abstract: A method of forming a compressible contact structure on a semi-conductor chip which comprises bonding a compressible polymer layer to the chip's surface, forming a plurality of openings within the layer, depositing electrically conductive material within the openings to form electrical connections with the chip's contacts, forming a plurality of electrically conductive line elements on the polymer layer extending from a respective opening and each including an end portion, and forming a plurality of contact members each on a respective one of the line segment end portions. The compressible polymer layer allows the contact members to deflect toward (compress) the chip when the contact members are engaged by an external force or forces. A semi-conductor chip including such a compressible contact structure is also provided.

Abstract: A circuitized substrate which includes a high temperature dielectric material in combination with a low temperature conductive paste, the paste including an organic binder component and at least one metallic component. The flakes of the metallic component are sintered to form a conductive path through the dielectric when the dielectric is used as a layer in the substrate.

Abstract: A circuitized substrate with a conductive layer which assures enhanced adhesion of the layer to selected dielectric layers used to form the circuitized substrate. The conductive layer includes at least one surface with the appropriate roughness to enable such adhesion and also good signal passage if the layer is used as a signal layer.

Abstract: A method of making a multilayered circuitized substrate assembly which includes bonding at least two circuitized substrates each including at least one layer of high temperature dielectric material, one of these layers in turn including at least one thru-hole therein having therein a quantity of a a low temperature conductive paste, the paste including an organic binder component and at least one metallic component. The flakes of the metallic component are sintered during the bonding to form a conductive path through the dielectric of one of the substrates.

Abstract: A method of making an interposer in which at least two dielectric layers are bonded to each other to sandwich a plurality of conductors there-between. The conductors each electrically couple a respective pair of opposed electrical contacts which are formed within and protrude from openings which are also formed within the dielectric layers as part of this method. The resulting interposer is ideally suited for use as part of a test apparatus to interconnect highly dense patterns of solder ball contacts of a semiconductor chip to lesser dense arrays of contacts on the apparatus's printed circuit board.

Abstract: A circuitized substrate and a method of making the circuitized substrate. The circuitized substrate includes a substrate having a substantially planar upper surface and a conductive layer positioned on the substantially planar upper surface. The conductive layer includes at least one side wall therein, defining an opening in the conductive layer. The conductive layer includes an end portion spaced from the opening, the end portion forming an acute angle with the substantially planar upper surface of the substrate. The at least one side wall is substantially perpendicular to the substantially planar upper surface of the substrate.

Abstract: A method of making a circuitized substrate. A conductive layer having a substantially planar upper surface is formed on and in direct mechanical contact with an upper surface of a substrate. A portion of the conductive layer is removed to form an interim side wall in the conductive layer. A layer of patternable material is formed on the substantially planar upper surface and on the interim side wall. A portion of the layer of patternable material on the conductive layer is removed to expose the interim side wall. A portion of the substantially planar upper surface is removed to form a side wall in the layer of patternable material. Portions of the interim side wall in the conductive layer are removed to form a second side wall and a bottom wall defined by the upper surface of the substrate. The second side wall is substantially perpendicular to the bottom wall.

Abstract: A test apparatus which uses a pair of substrates and housing to interconnect a host substrate (e.g., PCB) to an electronic device (e.g., semiconductor chip) to accomplish testing of the device. The apparatus includes a housing designed for being positioned on the PCB and have one of the substrates oriented therein during device engagement. The engaging contacts of the upper (second) substrate are sculpted to assure effective chip connection.

Abstract: A circuitized substrate which includes a high temperature dielectric material in combination with a low temperature conductive paste, the paste including an organic binder component and at least one metallic component. The flakes of the metallic component are sintered to form a conductive path through the dielectric when the dielectric is used as a layer in the substrate.

Abstract: A method of making a circuitized substrate which includes a high temperature dielectric material in combination with a low temperature conductive paste, the paste including an organic binder component and at least one metallic component. The flakes of the metallic component are sintered to form a conductive path through the dielectric when the dielectric is used as a layer in the substrate.

Abstract: A method for constructing a composite solder transfer moldplate for flip chip wafer bumping of a substrate, comprising the steps of coating at least one polymer layer onto a first side of a transparent plate, the plate having a thermal expansion coefficient similar to that of the substrate; and forming a multiplicity of cavities in a polymer layer on one side of the plate, each cavity being for receiving solder. A moldplate made by the method. The structure has required behavior through temperature excursions between room temperature and various solder molten temperatures.

Abstract: An interposer comprising at least two dielectric layers bonded to each other, sandwiching a plurality of conductors there-between. The conductors each electrically couple a respective pair of opposed electrical contacts formed within and protruding from openings with the dielectric layers. The interposer is ideally suited for use as part of a test apparatus to interconnect highly dense patterns of solder ball contacts of a semiconductor chip to lesser dense arrays of contacts on the apparatus's printed circuit board. The interposer is also capable of being used for other purposes, including as an interconnecting circuitized substrate between a semiconductor chip and a chip carrier substrate or between a chip carrier and a printed circuit board. Various methods of making such an interposer are also provided.

Abstract: A circuitized substrate in which selected ones of the signal conductors are substantially surrounded by shielding members which shield the conductors during passage of high frequency signals, e.g., to reduce noise. The shielding members may form solid members which lie parallel and/or perpendicular to the signal conductors, and may also be substantially cylindrical in shape to surround a conductive thru-hole which also forms part of the substrate. An electrical assembly and an information handling system are also defined.

Abstract: A method of treating a conductive layer to assure enhanced adhesion of the layer to selected dielectric layers used to form a circuitized substrate. The conductive layer includes at least one surface with the appropriate roughness to enable such adhesion and also good signal passage if the layer is used as a signal layer. The method is extendible to the formation of such substrates, including to the formation of multilayered substrates having many conductive and dielectric layers. Such substrates may include one or more electrical components (e.g., semiconductor chips) mounted thereon and may also be mounted themselves onto other substrates.

Abstract: An electrical assembly which includes a circuitized substrate comprised of an organic dielectric material having a first electrically conductive pattern thereon. At least part of the dielectric layer and pattern form the first, base portion of an organic memory device, the remaining portion being a second, polymer layer formed over the part of the pattern and a second conductive circuit formed on the polymer layer. A second dielectric layer if formed over the second conductive circuit and first circuit pattern to enclose the organic memory device. The device is electrically coupled to a first electrical component through the second dielectric layer and this first electrical component is electrically coupled to a second electrical component. A method of making the electrical assembly is also provided, as is an information handling system adapted for using one or more such electrical assemblies as part thereof.

Abstract: A structure and method to establish an electrical connection between a tester and an electrical component. A flexible dielectric layer has a first side and a second side. A through via extends through the first side and the second side of the dielectric layer. A blind via is placed in a position that is offset from the through via and extends laterally in a first direction from a section of the first through via to a section of the flexible dielectric layer. The blind via extends in a second direction from the first side of the flexible dielectric layer to a section of the flexible dielectric layer that is between the first side and the second side of the dielectric layer. An electrically conductive member extends through the through via and extends into the blind via, thereby filling the through via and the blind via. The electrically conductive member has a first surface and a second surface.

Abstract: A method for improving the adhesion between polyimide layers and the structure formed by the method. A silicon oxide-containing layer is formed on the surface of a polyimide layer and a second layer of polyimide is formed on the silicon oxide-containing layer.

Abstract: A multi-layered interconnect structure and method of formation. In a first embodiment, first and second liquid crystal polymer (LCP) dielectric layers are directly bonded, respectively, to first and second opposing surface of a thermally conductive layer, with no extrinsic adhesive material bonding the thermally conductive layer with either the first or second LCP dielectric layer. In a second embodiment, first and second 2S1P substructures are directly bonded, respectively, to first and second opposing surfaces of a LCP dielectric joining layer, with no extrinsic adhesive material bonding the LCP dielectric joining layer with either the first or second 2S1P substructures.