Abstract: A circumferential milling tool (10) for cutting metal is described, which comprises a milling cutter body (14) that can be rotated about a tool axis (12) and has at least two cutting edge groups. The arrangement of the first cutting edge group results in a first average chip thickness for the cutting edges (16) of the first cutting edge group and a second average chip thickness for the cutting edges (18, 20, 22, 24, 26) of the second cutting edge group. The first average chip thickness and the second average chip thickness are substantially equal. A method for arranging cutting edges (16, 18, 20, 22, 24, 26) on a circumferential milling tool (10) that can be rotated about a tool axis (12) is presented as well.

Abstract: An implant and method for producing an implant, in particular an intraluminal endoprosthesis, with a body, wherein the body contains iron or an iron alloy, comprising the following steps: a) providing the implant body (1), b) applying a metallic coating comprising as main constituent at least one element of the group containing tantalum, niobium, zirconium, aluminum, magnesium, vanadium, molybdenum, hafnium, and wolfram onto at least a portion of the body surface, and c) plasmachemical treatment of the portion of the body surface provided with the coating in an aqueous solution for producing a plasmachemically generated layer (3, 5, 7) by means of applying a plasma-generating pulsating voltage to the body of the implant, wherein the pulsating voltage has sufficient energy that the metallic coating (3, 5, 7) is temporarily and sectionally ionized up to the underlying implant body (1) in such a manner that the generated layer has pores (5) which extend at least partially up to the implant body.

Abstract: An implant and method for producing an implant, in particular an intraluminal endoprosthesis, with a body, wherein the body contains iron or an iron alloy, comprising the following steps: a) providing the implant body (1), b) applying a metallic coating comprising as main constituent at least one element of the group containing tantalum, niobium, zirconium, aluminum, magnesium, vanadium, molybdenum, hafnium, and wolfram onto at least a portion of the body surface, and c) plasmachemical treatment of the portion of the body surface provided with the coating in an aqueous solution for producing a plasmachemically generated layer (3, 5, 7) by means of applying a plasma-generating pulsating voltage to the body of the implant, wherein the pulsating voltage has sufficient energy that the metallic coating (3, 5, 7) is temporarily and sectionally ionized up to the underlying implant body (1) in such a manner that the generated layer has pores (5) which extend at least partially up to the implant body.

Abstract: The invention relates to a process for the electrochemical deposition of tantalum and/or copper on a substrate in an ionic liquid comprising at least one tetraalkylammonium, tetraalkylphosphonium, 1,1-dialkylpyrrolidinium, 1-hydroxyalkyl-1-alkylpyrrolidinium, 1-hydroxyalkyl-3-alkylimidazolium or 1,3-bis(hydroxyalkyl)imidazolium cation, where the alkyl groups or the alkylene chain of the hydroxyalkyl group may each, independently of one another, have 1 to 10 C atoms.

Abstract: The invention relates to a process for the electrochemical deposition of grey selenium on a substrate in an ionic liquid, where the electrochemical deposition can be carried out at temperatures of greater than 10000.