Patents by Inventor Frank F. Ho

Frank F. Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9184332
    Abstract: An IMM solar cell and an associated method of fabricating an IMM solar cell are provided. In the context of a method, a first subcell may be formed upon a temporary substrate and a second subcell may be formed upon the first subcell. The second subcell may have a smaller band gap than the first subcell. The method may also bond the first and second subcells to a silicon subcell and then remove the temporary substrate. In the context of an IMM solar cell, the IMM solar cell includes first and second subcells with the first subcell disposed upon the second subcell and the second subcell having a smaller band gap than the first subcell. The IMM solar cell may also include a silicon subcell supporting the first and second subcells thereupon with a metal-to-metal bond between the silicon subcell and the second subcell.
    Type: Grant
    Filed: July 5, 2011
    Date of Patent: November 10, 2015
    Assignee: The Boeing Company
    Inventor: Frank F. Ho
  • Patent number: 8878048
    Abstract: A solar cell structure including a silicon carrier defining a front side and a back side, and including an N-type portion having an exposed portion on the front side of the carrier and a P-type portion having an exposed portion on the front side of the carrier, the N-type portion and the P-type portion defining a P-N junction, and a solar cell defining a front side and a back side, wherein the solar cell is connected to the front side of the carrier such that the back side of the solar cell is electrically coupled to the exposed portion of the N-type portion, and wherein the front side of the solar cell is electrically coupled to the exposed portion of the P-type portion.
    Type: Grant
    Filed: May 17, 2010
    Date of Patent: November 4, 2014
    Assignee: The Boeing Company
    Inventors: Frank F. Ho, Charles Hyunsang Suh
  • Publication number: 20130008493
    Abstract: An IMM solar cell and an associated method of fabricating an IMM solar cell are provided. In the context of a method, a first subcell may be formed upon a temporary substrate and a second subcell may be formed upon the first subcell. The second subcell may have a smaller band gap than the first subcell. The method may also bond the first and second subcells to a silicon subcell and then remove the temporary substrate. In the context of an IMM solar cell, the IMM solar cell includes first and second subcells with the first subcell disposed upon the second subcell and the second subcell having a smaller band gap than the first subcell. The IMM solar cell may also include a silicon subcell supporting the first and second subcells thereupon with a metal-to-metal bond between the silicon subcell and the second subcell.
    Type: Application
    Filed: July 5, 2011
    Publication date: January 10, 2013
    Inventor: Frank F. Ho
  • Publication number: 20110277820
    Abstract: A solar cell structure including a silicon carrier defining a front side and a back side, and including an N-type portion having an exposed portion on the front side of the carrier and a P-type portion having an exposed portion on the front side of the carrier, the N-type portion and the P-type portion defining a P-N junction, and a solar cell defining a front side and a back side, wherein the solar cell is connected to the front side of the carrier such that the back side of the solar cell is electrically coupled to the exposed portion of the N-type portion, and wherein the front side of the solar cell is electrically coupled to the exposed portion of the P-type portion.
    Type: Application
    Filed: May 17, 2010
    Publication date: November 17, 2011
    Applicant: THE BOEING COMPANY
    Inventors: Frank F. Ho, Charles Hyunsang Suh
  • Patent number: 6951819
    Abstract: In one embodiment, a method of forming a multijunction solar cell having lattice mismatched layers and lattice-matched layers comprises growing a top subcell having a first band gap over a growth semiconductor substrate. A middle subcell having a second band gap is grown over the top subcell, and a lower subcell having a third band gap is grown over the middle subcell. The lower subcell is substantially lattice-mismatched with respect to the growth semiconductor substrate. The first band gap of the top subcell is larger than the second band gap of the middle subcell. The second band gap of the middle subcell is larger than the third band gap of the lower subcell. A support substrate is formed over the lower subcell, and the growth semiconductor substrate is removed. In various embodiments, the multijunction solar cell may further comprise additional lower subcells. A parting layer may also be provided between the growth substrate and the top subcell in certain embodiments.
    Type: Grant
    Filed: December 4, 2003
    Date of Patent: October 4, 2005
    Assignee: Blue Photonics, Inc.
    Inventors: Peter A. Iles, Frank F. Ho, Yea-Chuan M. Yeh
  • Publication number: 20040166681
    Abstract: In one embodiment, a method of forming a multijunction solar cell having lattice mismatched layers and lattice-matched layers comprises growing a top subcell having a first band gap over a growth semiconductor substrate. A middle subcell having a second band gap is grown over the top subcell, and a lower subcell having a third band gap is grown over the middle subcell. The lower subcell is substantially lattice-mismatched with respect to the growth semiconductor substrate. The first band gap of the top subcell is larger than the second band gap of the middle subcell. The second band gap of the middle subcell is larger than the third band gap of the lower subcell. A support substrate is formed over the lower subcell, and the growth semiconductor substrate is removed. In various embodiments, the multijunction solar cell may further comprise additional lower subcells. A parting layer may also be provided between the growth substrate and the top subcell in certain embodiments.
    Type: Application
    Filed: December 4, 2003
    Publication date: August 26, 2004
    Inventors: Peter A. Iles, Frank F. Ho, Yea-Chuan M. Yeh
  • Patent number: 5405453
    Abstract: A high efficiency solar cell comprises: (a) a germanium substrate having a front surface and a back surface; (b) a back-metal contact on the back surface of the germanium substrate; (c) a first semiconductor cell comprising (1) a GaAs p-n junction formed from an n-GaAs and a p-GaAs layer, the n-GaAs layer formed on the front surface of the n-germanium substrate, and (2) a p-(Al,Ga)As window layer, the p-(Al,Ga)As window layer formed on the p-GaAs layer; (d) a tunnel diode comprising a GaAs p.sup.+ -n.sup.+ junction formed from a p.sup.+ -GaAs layer and an n.sup.+ -GaAs layer, the p.sup.+ -GaAs layer formed on the p-(Al,Ga)As window layer; and (e) a second semiconductor cell comprising (1) a (Ga,In)P p-n junction formed from an n-(Ga,In)P layer and a p-(Ga,In)P layer, the n(Ga,In)P layer formed on the n.sup.
    Type: Grant
    Filed: November 8, 1993
    Date of Patent: April 11, 1995
    Assignee: Applied Solar Energy Corporation
    Inventors: Frank F. Ho, Milton Y. Yeh
  • Patent number: 4915744
    Abstract: A gallium-arsenide solar cell has a germanium substrate cut at a special angle, with its surface generally perpendicular to the 001 axis, but tilted by about six to fifteen degrees toward the direction generally about half-way between the 011 and the 111 axial directions. To avoid the cascade effect the junction with the substrate may be passivated or photovoltaically inhibited by initiating vapor deposition of GaAs at a temperature below 700.degree. C. and rapidly ramping the temperature up to normal vapor deposition temperatures. Poisoning of the GaAs layer by germanium may be prevented inexpensively by using a silicon dioxide coating on one side of the germanium substrate.
    Type: Grant
    Filed: February 3, 1989
    Date of Patent: April 10, 1990
    Assignee: Applied Solar Energy Corporation
    Inventors: Frank F. Ho, Milton Y. Yeh