Abstract: Embodiments of the present disclosure generally relate to a method for forming and treating a component in semiconductor manufacturing. In one embodiment, a method for treating a chamber component used in vacuum processing includes obtaining the chamber component including a recess formed in a surface of the chamber component, the surface being fabricated from a metal, and the recess has a depth ranging from about 0.5 mm to about 10 mm and a width ranging from about 1 mm to about 15 mm. The method further includes polishing the bottom surface of the recess using a laser to form a polished bottom surface having an Ra number of 1 micron or less. The laser can achieve high quality surface finishing.

Abstract: Methods and substrate processing systems are provided for controlling substrate heating efficiency and generating a desired temperature profile on the surface of a substrate when the substrate is disposed on a substrate support surface of a substrate support assembly. The substrate support assembly is provided with minimum software control and hardware requirement and includes a heating element comprised of multiple heating elements sections. The heating element is connected to a power source for adjusting the temperature outputs of the multiple heating element sections and providing adjustable multi-heating zones and desired temperature distribution over the substrate support surface of the substrate support assembly within a process chamber.

Abstract: A bushing assembly for supporting a substrate within a processing chamber is generally provided. In one aspect, the bushing assembly comprises a tubular body having an outer perimeter and an aperture extending therethrough, a first ring having a first inner edge, the first ring disposed in the aperture in an upper portion of the tubular body, and a second ring having a second inner edge, the second ring disposed in the aperture in a lower portion of the tubular body. In another aspect, the first inner edge has a first radius of curvature, and the second inner edge has a second radius of curvature. In another aspect, a first inner edge diameter, a second inner edge diameter, the first radius of curvature, and the second radius of curvature are selected such that a support pin extending through the aperture contacts the bushing assembly on at most two points.

Abstract: A substrate processing system with independent substrate placement capability to two or more substrate support assemblies is provided. Two different sets of fixed-length lift pins are disposed on two or more substrate support lift pin assemblies of two or more process chambers, where the length of each lift pin in one process chamber is different from the length of each lift pin in another process chamber. The substrate processing system includes simplified mechanical substrate support lift pin mechanisms and minimum accessory parts cooperating with a substrate transfer mechanism (e.g., a transfer robot) for efficient and independent loading, unloading, and transfer of one or more substrates between two or more processing regions in a twin chamber or between two or more process chambers. A method for positioning one or more substrates to be loaded, unloaded, or processed independently or simultaneously in two or more processing regions or process chambers is provided.

Abstract: Methods and substrate processing systems are provided for controlling substrate heating efficiency and generating a desired temperature profile on the surface of a substrate when the substrate is disposed on a substrate support surface of a substrate support assembly. The substrate support assembly is provided with minimum software control and hardware requirement and includes a heating element comprised of multiple heating elements sections. The heating element is connected to a power source for adjusting the temperature outputs of the multiple heating element sections and providing adjustable multi-heating zones and desired temperature distribution over the substrate support surface of the substrate support assembly within a process chamber.

Abstract: Methods and apparatus for treating effluents in process systems are provided In some embodiments, a system for treating effluent includes a process chamber having a processing volume; an exhaust conduit coupled to the process chamber to remove an effluent from the processing volume; and a reactive species generator coupled to the exhaust conduit to inject a reactive species into the exhaust conduit to treat the effluent, wherein the reactive species generator generates a reactive species comprising at least one of singlet hydrogen, hydrogen ions or hydrogen radicals. In some embodiments, a method for treating effluent includes flowing an effluent from a processing volume of a process system through an exhaust conduit fluidly coupled to the processing volume; treating the effluent in the exhaust conduit with a reactive species comprising at least one of singlet hydrogen, hydrogen ions, or hydrogen radicals; and flowing the treated effluent to an abatement system.

Abstract: Embodiments of an abatement apparatus are disclosed herein. In some embodiments, an abatement apparatus may include a scrubber configured to receive an effluent stream from a process chamber and further configured to remove first particles from the effluent stream; a scrubber conduit coupled to the scrubber to receive the effluent stream therefrom and configured to remove second particles from the effluent stream, the scrubber conduit having one or more inlets configured to provide a fluid to sufficiently wet an interior surface of the scrubber conduit to trap the second particles thereon and to wash the second particles therealong; and a central scrubber coupled to the scrubber via the scrubber conduit. In some embodiments, the scrubber conduit is downward sloping from the scrubber to the central scrubber. In some embodiments, a plurality of scrubbers may be coupled to the central scrubber via a plurality of scrubber conduits.

Abstract: A thermal abatement system is provided, including: a thermal abatement reactor; an inlet in fluid communication with the reactor; a process chamber in fluid communication with the inlet; a first sheathing fluid source in fluid communication with the inlet; a first flow control device, adapted to regulate a flow of a first sheathing fluid from the first sheathing fluid source; and a controller, in signal communication with the first flow control device, adapted to regulate the sheathing fluid by operating the first flow control device; wherein the inlet is adapted to receive an effluent stream from the process chamber and the first sheathing fluid from the first sheathing fluid source, to sheathe the effluent stream with the first sheathing fluid to form a sheathed effluent stream, and to introduce the sheathed effluent stream into the reactor.

Abstract: A matching network for performing frequency tuned matching between a source and a load. The matching network includes a first capacitor and first inductor, having fixed values, coupled in series from an input port to an output port. A second capacitor and second inductor, having fixed values, is coupled in series from one of the input port and output port to ground. The input port is adapted to receive a variable frequency RF signal and the output port is adapted to be coupled to a time-variant load impedance. The values of the first inductor and first capacitor are related by a first mathematical relationship, and the values of the second inductor and second capacitor are related by a second mathematical relationship. The substantial impedance range of the matching network enables a match to be maintained over a large fluctuation in load impedance.

Abstract: A method and apparatus for selectively controlling a plasma in a processing chamber during wafer processing. The method includes providing process gasses into the chamber over a wafer to be processed, and providing high frequency RF power to a plasma generating element and igniting the process gases into the plasma. Modulated RF power is coupled to a biasing element, and wafer processing is performed according to a particular processing recipe. The apparatus includes a biasing element disposed in the chamber and adapted to support a wafer, and a plasma generating element disposed over the biasing element and wafer. A first power source is coupled to the plasma generating element, and a second power source is coupled to the biasing element. A third power source is coupled to the biasing element, wherein the second and third power sources provide a modulated signal to the biasing element.