Abstract: Epitaxial wafers with a high concentration of BMD nuclei or developed BMDs just below a denuded zone, and having low surface roughness, are produced by forming an oxynitride layer on a purposefully oxidized epitaxial layer by a short RTA treatment in a nitriding atmosphere, removing the oxynitride layer, and then polishing the epitaxial surface.

Abstract: Epitaxial wafers with a high concentration of BMD nuclei or developed BMDs just below a denuded zone, and having low surface roughness, are produced by forming an oxynitride layer on a purposefully oxidized epitaxial layer by a short RTA treatment in a nitriding atmosphere, removing the oxynitride layer, and then polishing the epitaxial surface.

Abstract: An apparatus for extracting energy from a fluid flow including a secondary fluid channel, a fluid driveable generator unit and a primary fluid channel. The primary fluid channel comprises a fluid intake in fluid communication with a throat. The throat is configured to increase the flow velocity and reduce the pressure of the primary fluid flowing through the primary fluid channel and includes at least one plenum in the interior of the throat configured to further reduce the pressure of the primary fluid flowing through the primary fluid channel. The plenum includes at least one perforation through its exterior surface in fluid communication with the secondary fluid channel. As such, the flow of primary fluid through the primary fluid channel draws the secondary fluid into the primary fluid channel through the secondary fluid channel and the perforation and thereby into driving engagement with the generator.

Abstract: Monocrystalline silicon semiconductor wafers have a front side and a rear side, and a denuded zone which extends from the front side to the rear side as far as a depth which between a center and an edge of the semiconductor wafer on average is not less than 8 ?m and not more than 18 ?m, and having a region adjoining the denuded zone having BMDs whose density at a distance of 30 ?m from the front side is not less than 2×109 cm?3. The semiconductor wafers are produced by a method comprising providing a substrate wafer of monocrystalline silicon and an RTA treating the substrate wafer, the treatment subdivided into a first thermal treatment of the substrate wafer in an atmosphere consisting of argon and into a second thermal treatment of the substrate wafer in an atmosphere consisting of argon and ammonia.

Abstract: Monocrystalline silicon semiconductor wafers have a front side and a rear side, and a denuded zone which extends from the front side to the rear side as far as a depth which between a center and an edge of the semiconductor wafer on average is not less than 8 ?m and not more than 18 ?m, and having a region adjoining the denuded zone having BMDs whose density at a distance of 30 ?m from the front side is not less than 2×109 cm?3. The semiconductor wafers are produced by a method comprising providing a substrate wafer of monocrystalline silicon and an RTA treating the substrate wafer, the treatment subdivided into a first thermal treatment of the substrate wafer in an atmosphere consisting of argon and into a second thermal treatment of the substrate wafer in an atmosphere consisting of argon and ammonia.

Abstract: An apparatus for extracting energy from a fluid flow including a secondary fluid channel, a fluid driveable generator unit and a primary fluid channel. The primary fluid channel comprises a fluid intake in fluid communication with a throat. The throat is configured to increase the flow velocity and reduce the pressure of the primary fluid flowing through the primary fluid channel and includes at least one plenum in the interior of the throat configured to further reduce the pressure of the primary fluid flowing through the primary fluid channel. The plenum includes at least one perforation through its exterior surface in fluid communication with the secondary fluid channel. As such, the flow of primary fluid through the primary fluid channel draws the secondary fluid into the primary fluid channel through the secondary fluid channel and the perforation and thereby into driving engagement with the generator.

Abstract: A method and apparatus for applying contacts to a semiconductor substrate, comprising one or more applicator rolls. Each applicator roll comprises a printing surface which has at least one raised pattern surface. Each raised first pattern surface is positioned such that upon rotation of the first rotatable applicator roll, it passes through a printing space. As a result, a surface of a semiconductor substrate passing through the printing space while the raised pattern surface(s) is covered with a conductive ink and the applicator roll is being rotated comes into contact with the conductive ink on at least part of the raised pattern surface, and does not come into contact with conductive ink on substantially any of the printing surface other than the raised pattern surface. Accordingly, a conductive ink pattern is deposited on the semiconductor substrate surface. In a preferred aspect, the conductive ink is a hot melt ink.