Patents by Inventor Frank Feustal

Frank Feustal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making semiconductor device comprising replacement gate electrode structures with an enhanced diffusion barrier
    Patent number: 8609524
    Abstract: In sophisticated semiconductor devices, the integrity of the device level may be enhanced after applying a replacement gate approach by providing an additional diffusion barrier layer, such as a silicon nitride layer, thereby obtaining a similar degree of diffusion blocking capabilities as in semiconductor devices without performing a replacement gate approach.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: December 17, 2013
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Kai Frohberg, Frank Feustal, Thomas Werner
  • SEMICONDUCTOR DEVICE COMPRISING REPLACEMENT GATE ELECTRODE STRUCTURES WITH AN ENHANCED DIFFUSION BARRIER
    Publication number: 20110101426
    Abstract: In sophisticated semiconductor devices, the integrity of the device level may be enhanced after applying a replacement gate approach by providing an additional diffusion barrier layer, such as a silicon nitride layer, thereby obtaining a similar degree of diffusion blocking capabilities as in semiconductor devices without performing a replacement gate approach.
    Type: Application
    Filed: September 30, 2010
    Publication date: May 5, 2011
    Inventors: Kai Frohberg, Frank Feustal, Thomas Werner