Abstract: Methods are provided for fabricating a process structure, such as a mask or mask blank. The methods include, for instance: providing a silicon substrate; forming a multi-layer, extreme ultra-violet lithography (EUVL) structure over the silicon substrate; subsequent to forming the multi-layer EUVL structure over the crystalline substrate, reducing a thickness of the silicon substrate; and attaching a low-thermal-expansion material (LTEM) substrate to one of the multi-layer EUVL structure, or the reduced silicon substrate. In one implementation, the silicon substrate is a silicon wafer with a substantially defect-free surface upon which the multi-layer EUVL structure is formed. The multi-layer EUVL structure may include multiple bi-layers of a first material and a second material, as well as a capping layer, and optionally, an absorber layer, where the absorber layer is patternable to facilitating forming a EUVL mask from the process structure.

Abstract: Methods are provided for fabricating a process structure, such as a mask or mask blank. The methods include, for instance: providing a silicon substrate; forming a multi-layer, extreme ultra-violet lithography (EUVL) structure over the silicon substrate; subsequent to forming the multi-layer EUVL structure over the crystalline substrate, reducing a thickness of the silicon substrate; and attaching a low-thermal-expansion material (LTEM) substrate to one of the multi-layer EUVL structure, or the reduced silicon substrate. In one implementation, the silicon substrate is a silicon wafer with a substantially defect-free surface upon which the multi-layer EUVL structure is formed. The multi-layer EUVL structure may include multiple bi-layers of a first material and a second material, as well as a capping layer, and optionally, an absorber layer, where the absorber layer is patternable to facilitating forming a EUVL mask from the process structure.

Abstract: A system and method for the high temperature in-situ determination of corrosion characteristics of a molten metal on an alloy under study is provided which takes place within an insulated furnace. A graphite crucible provided in the furnace contains an electrolyte formed from a molten salt of a metal halide. A reference electrode formed from the same metal as the electrolyte is immersed in the electrolyte solution in the graphite crucible. A beta-alumina crucible containing a molten metal is also provided within the furnace and preferably within the graphite crucible. A measuring electrode formed from the alloy under study is immersed in the molten metal. Standard electrochemical techniques are used to measure and analyze the electrochemical effects of corrosion of the molten metal on the alloy.

Abstract: A system and method for the high temperature in-situ determination of corrosion characteristics of a molten metal on an alloy under study is provided which takes place within an insulated furnace. A graphite crucible provided in the furnace contains an electrolyte formed from a molten salt of a metal halide. A reference electrode formed from the same metal as the electrolyte is immersed in the electrolyte solution in the graphite crucible. A beta-alumina crucible containing a molten metal is also provided within the furnace and preferably within the graphite crucible. A measuring electrode formed from the alloy under study is immersed in the molten metal. Standard electrochemical techniques are used to measure and analyze the electrochemical effects of corrosion of the molten metal on the alloy.

Abstract: Systems, methods, and lithography masks for measuring flare in semiconductor lithography. A layer of photosensitive material is exposed to a first test pattern and a second test pattern, the second test pattern comprising an opaque or attenuated region. The second test pattern is placed proximate features formed in a photosensitive material in a first exposure by the first test pattern, in a second exposure by the second test pattern on the same mask or a different mask. Alternatively, the second test pattern may be disposed proximate a portion of the first test pattern on a single mask using a single exposure. If flare exists in the optical system, the second test pattern causes line shortening in the features formed in the photosensitive material of the first test pattern. The line shortening can be measured to determine the effect of flare in the lithography system.

Abstract: Systems, methods, and lithography masks for measuring flare in semiconductor lithography. A layer of photosensitive material is exposed to a first test pattern and a second test pattern, the second test pattern comprising an opaque or attenuated region. The second test pattern is placed proximate features formed in a photosensitive material in a first exposure by the first test pattern, in a second exposure by the second test pattern on the same mask or a different mask. Alternatively, the second test pattern may be disposed proximate a portion of the first test pattern on a single mask using a single exposure. If flare exists in the optical system, the second test pattern causes line shortening in the features formed in the photosensitive material of the first test pattern. The line shortening can be measured to determine the effect of flare in the lithography system.