Abstract: The present disclosure relates to a pyrotechnic object, in particular an irritation body, irritation projectile or ammunition, comprising an ignition device, comprising a delay chamber extending along a delay path, in which chamber a delay charge is accommodated, and comprising at least one and preferably a plurality of effect chambers in which or in each of which an effect charge to be ignited is accommodated, wherein the delay chamber is transversely connected to a respective effect chamber via a respective over-ignition opening which branches off from the delay chamber and forms an over-ignition path, wherein in the case of a plurality of effect chambers the plurality of over-ignition openings are arranged successively downstream along the delay path in the order of the effect charges to be ignited.

Abstract: The invention relates to an igniter with a delay time (Vz) that can be set. The delay time (Vz) can be fixedly defined, or individually and situation-dependently set on-site. In particular, the invention relates to a delay time that can be set for a stun grenade, a hand grenade etc., with options for the individual setting and situation-dependent or situation-contingent customisation of the delay time (Vz), and consequently of the effect of the active compositions in-situ. In order to achieve individual setting options, the invention proposes that at least two different delay times (Vz) can be set. To this end, the igniter has, in a delay section, preferably in the fuse head, a relief bore that can be closed or opened.

Abstract: A III-V-, IV-IV- or II-VI-compound single crystal comprising III-, IV- or II-precipitates and/or unstoichiometrical III-V-, IV-VI-, or II-VI-inclusions, wherein concentration of the respective precipitates and/or inclusions is no more than 1×104 cm?3

Abstract: The invention relates to an igniter with a delay time (Vz) that can be set. The delay time (Vz) can be fixedly defined, or individually and situation-dependently set on-site. In particular, the invention relates to a delay time that can be set for a stun grenade, a hand grenade etc., with options for the individual setting and situation-dependent or situation-contingent customisation of the delay time (Vz), and consequently of the effect of the active compositions in-situ. In order to achieve individual setting options, the invention proposes that at least two different delay times (Vz) can be set. To this end, the igniter has, in a delay section, preferably in the fuse head, a relief bore that can be closed or opened.

Abstract: A stun grenade for individual adjustment and situation-dependent adaptation of the number of active masses in situ. A switch mechanism is built into the stun grenade, enabling the simultaneous activation of different chambers inside the stun grenade in order to adjust the effect. The switch mechanism is formed by a tube and peripherally integrated boreholes and grooves. A different number of the chambers in the stun grenade is activated by the switch mechanism, thereby increasing or decreasing the active power.

Abstract: An irritation member having a housing, wherein the housing has a front side and a rear side, as well as lateral surfaces connecting the front side and the rear side. The front side and rear side are larger than the lateral surfaces, thereby producing a parallelepipedal housing. The irritation member has blow-out openings on the lateral surfaces and an actuation element that is provided in a recess of the housing. In the event of non-actuation, the actuation element is thereby received in the recess of the housing and thus does not increase the size of the housing. As a result, the irritation member does not look like a conventional irritation member.

Abstract: There is provided a template comprising a substrate comprising sapphire and at least one III-N crystal layer, wherein III denotes at least one element of the main group III of the periodic table of the elements, selected from the group of Al, Ga and In, wherein in a region of the at least one III-N layer above the substrate comprises a mask material as an interlayer, wherein the III-N crystal layer of the template is defined by one or both of the following values (i)/(ii) of the deformation ?xx: (i) at room temperature the ?xx value lies in the range of <0; and (ii) at growth temperature the ?xx value lies in the range of ?xx?0.

Abstract: An irritation member having a housing, wherein the housing has a front side and a rear side, as well as lateral surfaces connecting the front side and the rear side. The front side and rear side are larger than the lateral surfaces, thereby producing a parallelepipedal housing. The irritation member has blow-out openings on the lateral surfaces and an actuation element that is provided in a recess of the housing. In the event of non-actuation, the actuation element is thereby received in the recess of the housing and thus does not increase the size of the housing. As a result, the irritation member does not look like a conventional irritation member.

Abstract: A III-V-, IV-IV- or II-VI-compound single crystal comprising III-, IV- or II-precipitates and/or unstoichiometrical III-V-, IV-VI-, or II-VI-inclusions, wherein concentration of the respective precipitates and/or inclusions is no more than 1×104 cm?3

Abstract: The present invention relates to a process for the production of III-V-, IV-IV- or II-VI-compound semiconductor crystals. The process starts with providing of a substrate with optionally one crystal layer (buffer layer). Subsequently, a gas phase is provided, which comprises at least two reactants of the elements of the compound semiconductor (II, III, IV, V, VI) which are gaseous at a reaction temperature in the crystal growth reactor and can react with each other at the selected reactor conditions. The ratio of the concentrations of two of the reactants is adjusted such that the compound semiconductor crystal can crystallize from the gas phase, wherein the concentration is selected that high, that crystal formation is possible, wherein by an adding or adjusting of reducing agent and of co-reactant, the activity of the III-, IV- or II-compound in the gas phase is decreased, so that the growth rate of the crystals is lower compared to a state without co-reactant.

Abstract: A rolling preventer for reducing rolling movements of a grenade, wherein the rolling preventer has at least one hindering element, which counteracts rolling movements of the grenade and can consequently reduce the rolling movement. The rolling preventer according to the invention also has a clearance, by which the rolling preventer can be attached to a grenade. For this purpose, the grenade is inserted through the clearance and the rolling preventer is thereby fastened to the grenade. Also proposed is a grenade, with a housing, an actuating element and a safety device, wherein the grenade is equipped with a rolling preventer according to the invention.

Abstract: The present invention relates to a III-N single crystal adhering to a substrate, wherein III denotes at least one element of the third main group of the periodic table of the elements, selected from the group of Al, Ga and In, wherein the III-N single crystal exhibits, within a temperature range of an epitaxial crystal growth, a value (i) of deformation ?XX in the range of <0. Additionally or alternatively, the III-N single crystal exhibits at room temperature a value (ii) of deformation ?XX in the range of <0.

Abstract: A stun grenade for individual adjustment and situation-dependent adaptation of the number of active masses in situ. A switch mechanism is built into the stun grenade, enabling the simultaneous activation of different chambers inside the stun grenade in order to adjust the effect. The switch mechanism is formed by a tube and peripherally integrated boreholes and grooves. A different number of the chambers in the stun grenade is activated by the switch mechanism, thereby increasing or decreasing the active power.

Abstract: There is provided a template comprising a substrate comprising sapphire and at least one III-N crystal layer, wherein III denotes at least one element of the main group III of the periodic table of the elements, selected from the group of Al, Ga and In, wherein in a region of the at least one III-N layer above the substrate comprises a mask material as an interlayer, wherein the III-N crystal layer of the template is defined by one or both of the following values (i)/(ii) of the deformation ?xx: (i) at room temperature the ?xx value lies in the range of <0; and (ii) at growth temperature the ?xx value lies in the range of ?xx?0.

Abstract: The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.

Abstract: A stun grenade for repelling or defending against threats, and to a method for assembling the stun grenade. For this purpose, the main bodies of the stun grenades are produced separately from the flash charge containers. The flash charge containers are designed as at least one container for this purpose, which can be filled with at least one effect charge via an opening. The flash charge containers are then closed water-tight. The main bodies of the stun grenades can likewise be produced separately and comprise at least one cut-out for inserting the flash charge containers into the stun grenade. Thus, in case of use, the stun grenades can be assembled by mounting at least one flash charge container in the main body.

Abstract: The present invention relates to a III-N single crystal adhering to a substrate, wherein III denotes at least one element of the third main group of the periodic table of the elements, selected from the group of Al, Ga and In, wherein the III-N single crystal exhibits, within a temperature range of an epitaxial crystal growth, a value (i) of deformation ?XX in the range of <0. Additionally or alternatively, the III-N single crystal exhibits at room temperature a value (ii) of deformation ?XX in the range of <0.

Abstract: The present invention relates to a process for the production of III-V-, IV-IV- or II-VI-compound semiconductor crystals. The process starts with providing of a substrate with optionally one crystal layer (buffer layer). Subsequently, a gas phase is provided, which comprises at least two reactants of the elements of the compound semiconductor (II, III, IV, V, VI) which are gaseous at a reaction temperature in the crystal growth reactor and can react with each other at the selected reactor conditions. The ratio of the concentrations of two of the reactants is adjusted such that the compound semiconductor crystal can crystallize from the gas phase, wherein the concentration is selected that high, that crystal formation is possible, wherein by an adding or adjusting of reducing agent and of co-reactant, the activity of the III-, IV- or II-compound in the gas phase is decreased, so that the growth rate of the crystals is lower compared to a state without co-reactant.

Abstract: The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.