Patents by Inventor Frank J. Scholz

Frank J. Scholz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low-noise cryogenic MOSFET
    Patent number: 5357130
    Abstract: A microelectronic device of the MOSFET type (20) is structured to exhibit low noise characteristics at cryogenic temperatures of less than about 40K. The device (20) comprises a doped silicon substrate wafer (22), the dopant having an ionization energy in the substrate of more than about 0.1 eV. Preferred substrate dopants include tellurium as an n-type dopant and indium as a p-type dopant. A metal-oxide-semiconductor field effect transistor (20) in the substrate wafer (22) includes a source (24), a drain ( 26 ), and a gate (30) intermediate the source (24) and the drain (26).
    Type: Grant
    Filed: July 24, 1992
    Date of Patent: October 18, 1994
    Assignee: Hughes Aircraft Company
    Inventors: Frank J. Scholz, James W. Roach, Wing Y. Lum