Abstract: A scattered light detector comprises a first photodiode array comprising one or more photodiodes arranged in a planar, semicircular pattern on a substrate, each of the one or more photodiodes having an outer edge and an inner edge; and a notch perpendicular to the substrate and located adjacent the inner edge of each of the one or more diodes, and equidistant from the outer edges of each of the one or more photodiodes, the notch configured to accept an optical fiber oriented perpendicular to the plane of the one or more photodiodes. When there are two or more photodiodes, the photodiodes may be divided into two or more segments extending outwardly from the notch. Each of the photodiodes shares a common electrical ground. The planes of the one or more photodiodes of the first and second photodiode arrays are oriented parallel to each other and spaced a predetermined distance apart.

Abstract: In accordance with various embodiments of the disclosed subject matter, a phototransistor comprises an NPN or PNP phototransistor having a base including a Si-region, a Ge-region, and a Ge—Si interface region wherein photons are absorbed in the Ge region and conduction-band electrons are attracted to the interface region such that the electrons' mobility is enhanced thereby.

Abstract: In accordance with various embodiments of the disclosed subject matter, a phototransistor comprises an NPN or PNP phototransistor having a base including a Si-region, a Ge-region, and a Ge-Si interface region wherein photons are absorbed in the Ge region and conduction-band electrons are attracted to the interface region such that the electrons' mobility is enhanced thereby.

Abstract: A multiple quantum well arrangement which achieves significantly improved third order optical nonlinearity in a semiconductor device by way of spatially periodic electrodes applied to the semiconductor device. The spatial period of the applied electrodes and the resulting exciton confinement dimension is improved over that of previous multiple quantum well structures and to the Bohr radius range of dimensions for the semicondcutor material by way of avRIGHTS OF THE GOVERNMENTThe invention described herein may be manufactured and used by or for the Government of the United States for all governmental purposes without the payment of any royalty.