Abstract: A sensor arrangement for indirect detection of a torque of a rotatably mounted shaft includes a sensor with at least one sensor element arranged in the surroundings of a bearing of the shaft. The bearing is linked to a supporting structure. The sensor element is configured to detect a proportion of a bearing force acting in a predetermined direction. The torque of the shaft is configured to be calculated from the acting proportion of the bearing force. The sensor has at least one sensor body with an outer contour that supports a corresponding sensor element and is pressed into a receiving hole. The sensor element has a predetermined distance and a predetermined angle to the bearing.

Abstract: A sensor arrangement for indirect detection of a torque of a rotatably mounted shaft includes a sensor with at least one sensor element arranged in the surroundings of a bearing of the shaft. The bearing is linked to a supporting structure. The sensor element is configured to detect a proportion of a bearing force acting in a predetermined direction. The torque of the shaft is configured to be calculated from the acting proportion of the bearing force. The sensor has at least one sensor body with an outer contour that supports a corresponding sensor element and is pressed into a receiving hole. The sensor element has a predetermined distance and a predetermined angle to the bearing.

Abstract: A device for determining a pressure and a method for manufacturing the same, having a housing including a cavity, a sensor device including a first sealing structure which engages with the housing so that an opening of the cavity is closable with the aid of the sensor device, in which the sensor device is configured for determining a pressure which is applied to the cavity, and a sealing device situated between the housing and the sensor device and configured for pressing the first sealing structure on the housing by exerting a contact force on the sensor device.

Abstract: A device for determining a pressure and a method for manufacturing the same, having a housing including a cavity, a sensor device including a first sealing structure which engages with the housing so that an opening of the cavity is closable with the aid of the sensor device, in which the sensor device is configured for determining a pressure which is applied to the cavity, and a sealing device situated between the housing and the sensor device and configured for pressing the first sealing structure on the housing by exerting a contact force on the sensor device.

Abstract: A sensor assemblage, in particular a high-pressure sensor assemblage, includes a substrate element and a connector element, the substrate element comprising a sensor structure having a pressure-sensitive diaphragm and a cavity disposed in the region of the diaphragm, the substrate element being connected to the connector element in such a way that the cavity is connected to a hollow space of the connector element, the substrate element moreover including at least one further sensor structure having a pressure-sensitive further diaphragm and a further cavity disposed in the region of the further diaphragm, the further cavity being connected to a further hollow space of the at least one connector element or of a further connector element.

Abstract: A method and a device with the aid of which a substrate is electrochemically machined, material being removed from the surface of a conductive substrate with the aid of an also conductive tool. The removal takes place as a function of the surface structure which is incorporated into the tool. The core of the present invention is that the substrate and the tool are moved toward one another during the electrochemical etching process. However, it may alternatively also be provided that either the substrate or the tool is locally stationary, while only the counterpart is moved. In a particularly preferred embodiment of the present invention, only the tool is moved toward the substrate.

Abstract: A sensor assemblage, in particular a high-pressure sensor assemblage, includes a substrate element and a connector element, the substrate element comprising a sensor structure having a pressure-sensitive diaphragm and a cavity disposed in the region of the diaphragm, the substrate element being connected to the connector element in such a way that the cavity is connected to a hollow space of the connector element, the substrate element moreover including at least one further sensor structure having a pressure-sensitive further diaphragm and a further cavity disposed in the region of the further diaphragm, the further cavity being connected to a further hollow space of the at least one connector element or of a further connector element.

Abstract: A method for the plasma-free etching of silicon using the etching gas ClF3 or XeF2 and its use are provided. The silicon is provided having one or more areas to be etched as a layer on the substrate or as the substrate material itself. The silicon is converted into the mixed semiconductor SiGe by introducing germanium and is etched by supplying the etching gas ClF3 or XeF2. The introduction of germanium and the supply of the etching gas ClF3 or XeF2 may be performed at the same time or alternatingly. In particular, it is provided that the introduction of germanium be performed by implanting germanium ions in silicon.

Abstract: A micromechanical pressure sensor and a method for producing a micromechanical pressure sensor. This pressure sensor has at least one membrane and a measuring element situated on the membrane. A pressure applied at the membrane or a pressure differential applied at the different sides of the membrane results in deformation of the membrane. Simultaneous with the deformation of the membrane, the measuring element is subjected to elastic elongation and/or compression. In a piezo-sensitive component, such elastic elongation and/or compression generates a measured variable in the measuring element, which represents the applied pressure or the applied pressure differential at the membrane. It is provided in this context that the measuring element have at least partially a NiCr(Si) layer. Due to an at least partial crystallization in the production of the micromechanical pressure sensor, this NiCr(Si) layer has more advantageous piezoelectrical characteristics than an amorphous NiCr(Si) layer.

Abstract: A micromechanical pressure sensor and a method for producing a micromechanical pressure sensor. This pressure sensor has at least one membrane and a measuring element situated on the membrane. A pressure applied at the membrane or a pressure differential applied at the different sides of the membrane results in deformation of the membrane. Simultaneous with the deformation of the membrane, the measuring element is subjected to elastic elongation and/or compression. In a piezo-sensitive component, such elastic elongation and/or compression generates a measured variable in the measuring element, which represents the applied pressure or the applied pressure differential at the membrane. It is provided in this context that the measuring element have at least partially a NiCr(Si) layer. Due to an at least partial crystallization in the production of the micromechanical pressure sensor, this NiCr(Si) layer has more advantageous piezoelectrical characteristics than an amorphous NiCr(Si) layer.