Abstract: The present invention relates to a system comprising an electronic apparatus which comprises: —an electronic device comprising: —a gate electrode (G, BE); —a dielectric (D) arranged over the gate electrode (G, BE); and —a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (Cg) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (Cq) resulting in a total capacitance (Ctot); —a voltage detector to detect an output voltage (Vo) stored in the total capacitance (Ctot). The system further comprises means to apply a gate voltage (Vg) to the gate electrode structure (G, BE) selected to: —make the device operate around most sensitive point of fermi level of the charge sensing structure (CE); and —tune the quantum capacitance (Cq). The present invention also relates to an electronic apparatus adapted to allow the tuning of its quantum capacitance.

Abstract: Provided is an electro-optical modulator, particularly a double layer graphene modulator having an optimized arrangement to provide both a large optical bandwidth and a high optical transmission for light travelling through an optical waveguide of the modulator, wherein at least one of a top and a bottom graphene sheets extends along a X-direction: above part of the width of the optical waveguide, wherein that part ranges from 50% to 100% of the width of the optical waveguide; or completely above the whole width of the optical waveguide, and beyond through a respective further projecting portion with a length, along the X direction, of up to 25% of the optical waveguide width. Provided is also a method for obtaining the electro-optical modulator of the invention.

Abstract: The present invention relates to an electronic device, comprising: —a GFET; —noise suppression means comprising: —a modulation unit applying to a gate (G) of the GFET a signal Vg with frequency fm to modulate charge carrier density of a graphene channel around the charge neutrality point between charge carrier density values at frequency fm, —a control unit (CU), and—a demodulation circuit which is CMOS-implemented and that: —comprises first and second circuital branches alternately switchable to demodulate an electrical signal of frequency fm; or—is configured to generate and apply a signal Vb with frequency fmb to a source (S) of the GFET continuously, simultaneously and with a delay td to induce a phase with respect to Vg to yield a maximal demodulated output signal (So). The present invention also concerns to a method for suppressing noise for the device of the invention.

Abstract: The present invention relates to an optoelectronic apparatus, comprising: —an optoelectronic device comprising: —a transport structure (T) comprising a 2-dimensional layer; —a photosensitizing structure (P) to absorb incident light and induce changes in the electrical conductivity of the transport structure (T); and—drain (D) and source (S) electrodes electrically connected to the transport structure (T); —a read-out unit to read an electrical signal, generated at a transport channel of the transport structure (T), after an integration time interval tint has passed, and during a taccess that is at least 10 times shorter than tint, wherein tint is longer than a predetermined trapping time ?tr. The present invention also relates to a reading-out method, comprising performing the operations of the read-out unit of the apparatus of the invention, and to the use of the apparatus as a light detector or as an image sensor.

Abstract: An optoelectronic apparatus, such as a photodetector apparatus comprising a substrate (1), a dielectric layer (2), a transport layer, and a photosensitizing layer (5). The transport layer comprises at least a 2-dimensional semiconductor 5 layer (3), and the photosensitizing layer (5) comprises colloidal quantum dots. Enhanced responsivity and extended spectral coverage are achieved with the disclosed structures.

Abstract: An optoelectronic apparatus, such as a photodetector apparatus comprising a substrate (1), a dielectric layer (2), a transport layer, and a photosensitizing layer (5). The transport layer comprises at least a 2-dimensional semiconductor layer (3), such as MoS2, and the photosensitizing layer (5) comprises colloidal quantum dots. Enhanced responsivity and extended spectral coverage are achieved with the disclosed structures.

Abstract: The present invention relates to a device for operating with THz and/or IR and/or MW radiation, comprising: —an antenna having one or more antenna branches (A1; A1, A2) and adapted to operate in the THz and/or IR and/or MW frequency range; and —a structure made of at least one photoactive material defining a photo-active area (Ga) arranged to absorb light radiation impinging thereon. The focus area of the at least one antenna branch (A1; A1, A2) is dimensionally equal or smaller than the photo-active area (Ga).

Abstract: The present invention relates to a system comprising an electronic apparatus which comprises:—an electronic device comprising:—a gate electrode (G, BE);—a dielectric (D) arranged over the gate electrode (G, BE); and—a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (Cg) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (Cq) resulting in a total capacitance (Ctot);—a voltage detector to detect an output voltage (Vo) stored in the total capacitance (Ctot). The system further comprises means to apply a gate voltage (Vg) to the gate electrode structure (G, BE) selected to:—make the device operate around most sensitive point of fermi level of the charge sensing structure (CE); and—tune the quantum capacitance (Cq). The present invention also relates to an electronic apparatus adapted to allow the tuning of its quantum capacitance.

Abstract: The present invention relates to an electronic device, comprising: —a GFET; —noise suppression means comprising: —a modulation unit applying to a gate (G) of the GFET a signal Vg with frequency fm to modulate charge carrier density of a graphene channel around the charge neutrality point between charge carrier density values at frequency fm, —a control unit (CU), and —a demodulation circuit which is CMOS-implemented and that: —comprises first and second circuital branches alternately switchable to demodulate an electrical signal of frequency fm; or —is configured to generate and apply a signal Vb with frequency fmb to a source (S) of the GFET continuously, simultaneously and with a delay td to induce a phase with respect to Vg to yield a maximal demodulated output signal (So). The present invention also concerns to a method for suppressing noise for the device of the invention.

Abstract: The present invention relates to an optoelectronic apparatus, comprising: —an optoelectronic device comprising: —a transport structure (T) comprising a 2-dimensional layer; —a photosensitizing structure (P) to absorb incident light and induce changes in the electrical conductivity of the transport structure (T); and—drain (D) and source (S) electrodes electrically connected to the transport structure (T); —a read-out unit to read an electrical signal, generated at a transport channel of the transport structure (T), after an integration time interval tint has passed, and during a taccess that is at least 10 times shorter than tint, wherein tint is longer than a predetermined trapping time ?tr. The present invention also relates to a reading-out method, comprising performing the operations of the read-out unit of the apparatus of the invention, and to the use of the apparatus as a light detector or as an image sensor.

Abstract: The present invention relates to a system comprising an electronic apparatus which comprises: —an electronic device comprising: —a gate electrode structure (G, BE); —a dielectric (D) arranged over the gate electrode (G, BE); and —a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (Cg) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (Cq) resulting in a total capacitance (Ctot); —a read-out circuit configured so that when the total capacitance (Ctot) changes due to a change in the quantum capacitance (Cq), an imbalance between the total capacitance (Ctot) and the reference capacitance (Cf) results in a change on the output voltage (Vo) that is amplified to provide the read-out signal (So). The present invention also relates to an electronic apparatus like the one of the system of the present invention.

Abstract: The present invention relates to a device for operating with THz and/or IR and/or MW radiation, comprising:—an antenna having one or more antenna branches (A1; A1, A2) and adapted to operate in the THz and/or IR and/or MW frequency range; and—a structure made of at least one photoactive material defining a photo-active area (Ga) arranged to absorb light radiation impinging thereon. The focus area of the at least one antenna branch (A1; A1, A2) is dimensionally equal or smaller than the photo-active area (Ga).

Abstract: Provided is an electro-optical modulator, particularly a double layer graphene modulator having an optimized arrangement to provide both a large optical bandwidth and a high optical transmission for light travelling through an optical waveguide of the modulator, wherein at least one of a top and a bottom graphene sheets extends along a X-direction: above part of the width of the optical waveguide, wherein that part ranges from 50% to 100% of the width of the optical waveguide; or completely above the whole width of the optical waveguide, and beyond through a respective further projecting portion with a length, along the X direction, of up to 25% of the optical waveguide width. Provided is also a method for obtaining the electro-optical modulator of the invention.

Abstract: The present invention relates to an optoelectronic apparatus comprising: —an optoelectronic device comprising: —a transport structure (T) comprising a 2-dimensional layer; —a photosensitizing structure (P) configured and arranged to absorb incident light and induce changes in the electrical conductivity of the transport structure (T); and —drain (D) and source (S) electrodes electrically connected to respective separate locations of the transport structure (T); —noise suppression means comprising a modulation unit including: —a control unit to generate and apply on the drain (D) or source (S) electrodes a voltage oscillating signal having a component with a frequency of ?m/2?; and —a signal extraction unit to extract a required electric signal, from an output signal, with no components below ?m/2?. The present invention also concerns to a method for suppressing noise for an optoelectronic apparatus according to the invention, and to the use of the apparatus as a light detector or as an image sensor.

Abstract: The present invention relates to an optoelectronic apparatus comprising: —an optoelectronic device comprising: —a transport structure (T) comprising a 2-dimensional layer; —a photosensitizing structure (P) configured and arranged to absorb incident light and induce changes in the electrical conductivity of the transport structure (T); and —drain (D) and source (S) electrodes electrically connected to respective separate locations of the transport structure (T); — noise suppression means comprising a modulation unit including: —a control unit to generate and apply on the drain (D) or source (S) electrodes a voltage oscillating signal having a component with a frequency of ?m/2?; and —a signal extraction unit to extract a required electric signal, from an output signal, with no components below ?m/2?. The present invention also concerns to a method for suppressing noise for an optoelectronic apparatus according to the invention, and to the use of the apparatus as a light detector or as an image sensor.

Abstract: Provided are gaze tracking apparatuses, which in some embodiments can include an optoelectronic device, wherein the optoelectronic device includes an image sensor with non-local readout circuit having a substrate and a plurality of pixels and operatively connected to a control unit, wherein a first area of the substrate is at least partially transparent to visible light and at least the plurality of pixels of the image sensor are arranged on the first area of the substrate to aim to an eye of a user when placed in front of an inner face of the substrate, and wherein the control unit is also adapted to control the image sensor to acquire image information from the user's eye for performing a gaze tracking of the user's eye.

Abstract: The invention relates to an image sensor comprising a plurality of pixels operatively connected to a control unit that includes a readout circuit, characterized in that it comprises a monolithic three-dimensional integrated circuit comprising an upper level and a lower level; wherein each pixel comprises: a photosensitive element arranged in said upper level and comprising a photosensitizing layer associated to a transport layer; an active device arranged in said lower level and operatively coupled to the photosensitive element; and a first intermediate terminal and an output terminal circuitally connected, respectively, to the photosensitive element and to the readout circuit; wherein the image sensor further comprises a dark current suppressing circuit; and wherein the control unit is configured to, upon readout of a pixel, circuitally connect the first intermediate terminal of said pixel with its output terminal through the dark current suppressing circuit.

Abstract: Provided are gaze tracking apparatuses, which in some embodiments can include an optoelectronic device, wherein the optoelectronic device includes an image sensor with non-local readout circuit having a substrate and a plurality of pixels and operatively connected to a control unit, wherein a first area of the substrate is at least partially transparent to visible light and at least the plurality of pixels of the image sensor are arranged on the first area of the substrate to aim to an eye of a user when placed in front of an inner face of the substrate, and wherein the control unit is also adapted to control the image sensor to acquire image information from the user's eye for performing a gaze tracking of the user's eye.

Abstract: Provided are image sensors with non-local readout circuits that include a substrate and a plurality of pixels and operatively connected to a control unit, wherein the control unit has first and second biasing circuits for providing, respectively, substantially symmetrical first and second biasing voltages and including, respectively, first and second selection means to selectively bias the pixels; and a readout circuit for reading out the pixels; and in that each pixel includes a photo-active element that has a photosensitizing layer associated to a transport layer; a non-photo-active reference element; first and second contacts circuitally connected, respectively, to the first and second biasing circuits; and an output contact circuitally connected to the readout circuit; wherein the photo-active element is circuitally connected between the first and output contacts, and the reference element is circuitally connected between the output and second contacts.

Abstract: Provided are image sensors with non-local readout circuits that include a substrate and a plurality of pixels and operatively connected to a control unit, wherein the control unit has first and second biasing circuits for providing, respectively, substantially symmetrical first and second biasing voltages and including, respectively, first and second selection means to selectively bias the pixels; and a readout circuit for reading out the pixels; and in that each pixel includes a photo-active element that has a photosensitizing layer associated to a transport layer; a non-photo-active reference element; first and second contacts circuitally connected, respectively, to the first and second biasing circuits; and an output contact circuitally connected to the readout circuit; wherein the photo-active element is circuitally connected between the first and output contacts, and the reference element is circuitally connected between the output and second contacts.