Patents by Inventor Frank L. Struemph

Frank L. Struemph has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of fabrication of high-density laser diode stacks
    Patent number: 8518814
    Abstract: A method of fabricating a high-density laser diode stack is disclosed. The laser diode bars each have an emitter surface and opposing surfaces on either side of the emitter surface. Each laser diode bar has metallization layers on the opposing surfaces and a solder layer on at least one of the metallization layers. The solder layer is applied to a semiconductor wafer prior to cleaving the wafer to create the laser diode bars. The laser diode bars are arranged in a stack such that the emitter surfaces of the bars are facing the same direction. The stack of laser diode bars is placed in a vacuum chamber. An anti-reflection coating is deposited on the emitter surfaces of the laser diode bars in the chamber. The laser diode bars are joined by applying a temperature sufficient to reflow the solder layers in the chamber.
    Type: Grant
    Filed: December 2, 2011
    Date of Patent: August 27, 2013
    Assignee: Northrop Grumman Systems Corporation
    Inventors: Edward F. Stephens, IV, Frank L. Struemph, Jeremy Scott Junghans
  • METHODS OF FABRICATION OF HIGH-DENSITY LASER DIODE STACKS
    Publication number: 20130143338
    Abstract: A method of fabricating a high-density laser diode stack is disclosed. The laser diode bars each have an emitter surface and opposing surfaces on either side of the emitter surface. Each laser diode bar has metallization layers on the opposing surfaces and a solder layer on at least one of the metallization layers. The solder layer is applied to a semiconductor wafer prior to cleaving the wafer to create the laser diode bars. The laser diode bars are arranged in a stack such that the emitter surfaces of the bars are facing the same direction. The stack of laser diode bars is placed in a vacuum chamber. An anti-reflection coating is deposited on the emitter surfaces of the laser diode bars in the chamber. The laser diode bars are joined by applying a temperature sufficient to reflow the solder layers in the chamber.
    Type: Application
    Filed: December 2, 2011
    Publication date: June 6, 2013
    Applicant: Northrop Grumman Systems Corp.
    Inventors: Edward F. Stephens, IV, Frank L. Struemph, Jeremy Scott Junghans