Patents by Inventor Frank L. WEI

Frank L. WEI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Passivation for a semiconductor light emitting device
    Patent number: 11658273
    Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.
    Type: Grant
    Filed: December 21, 2020
    Date of Patent: May 23, 2023
    Assignee: Lumileds LLC
    Inventors: Frederic Stephane Diana, Kwong-Hin Henry Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
  • PASSIVATION FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE
    Publication number: 20210111321
    Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.
    Type: Application
    Filed: December 21, 2020
    Publication date: April 15, 2021
    Applicant: LUMILEDS LLC
    Inventors: Frederic Stephane Diana, Kwong-Hin Henry Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
  • Passivation for a semiconductor light emitting device
    Patent number: 10873013
    Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.
    Type: Grant
    Filed: September 26, 2018
    Date of Patent: December 22, 2020
    Assignee: Lumileds LLC
    Inventors: Frederic Stephane Diana, Kwong-Hin Henry Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
  • Dicing a wafer of light emitting devices
    Patent number: 10707387
    Abstract: Some embodiments include a III-nitride light emitting device with a light emitting layer disposed between an n-type region and a p-type region. A glass layer is connected to the III-nitride light emitting device. A wavelength converting layer is disposed between the III-nitride light emitting device and the glass layer. The glass layer is narrower than the III-nitride light emitting device.
    Type: Grant
    Filed: July 7, 2014
    Date of Patent: July 7, 2020
    Assignee: Lumileds LLC
    Inventors: Satyanarayana Rao Peddada, Frank L. Wei
  • PASSIVATION FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE
    Publication number: 20190027664
    Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.
    Type: Application
    Filed: September 26, 2018
    Publication date: January 24, 2019
    Inventors: Frederic Stephane Diana, Kwong-Hin Henry Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
  • Passivation for a semiconductor light emitting device
    Patent number: 10134964
    Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.
    Type: Grant
    Filed: May 29, 2013
    Date of Patent: November 20, 2018
    Assignee: LUMILEDS LLC
    Inventors: Frederic S. Diana, Henry Kwong-Hin Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
  • Passivation for a semiconductor light emitting device
    Patent number: 10134965
    Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.
    Type: Grant
    Filed: March 22, 2016
    Date of Patent: November 20, 2018
    Assignee: Lumileds LLC
    Inventors: Frederic Stephane Diana, Kwong-Hin Henry Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
  • PASSIVATION FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE
    Publication number: 20160204315
    Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.
    Type: Application
    Filed: March 22, 2016
    Publication date: July 14, 2016
    Inventors: Frederic Stephane Diana, Kwong-Hin Henry Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
  • DICING A WAFER OF LIGHT EMITTING DEVICES
    Publication number: 20160163934
    Abstract: Some embodiments include a III-nitride light emitting device with a light emitting layer disposed between an n-type region and a p-type region. A glass layer is connected to the III-nitride light emitting device. A wavelength converting layer is disposed between the III-nitride light emitting device and the glass layer. The glass layer is narrower than the III-nitride light emitting device.
    Type: Application
    Filed: July 7, 2014
    Publication date: June 9, 2016
    Inventors: Satyanarayana Rao Peddada, Frank L. Wei
  • PASSIVATION FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE
    Publication number: 20130252358
    Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.
    Type: Application
    Filed: May 29, 2013
    Publication date: September 26, 2013
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Frederic S. Diana, Henry Kwong-Hin Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
  • Passivation for a semiconductor light emitting device
    Patent number: 8471282
    Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.
    Type: Grant
    Filed: June 7, 2010
    Date of Patent: June 25, 2013
    Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLC
    Inventors: Frederic S. Diana, Henry Kwong-Hin Choy, Qingwei Mo, Serge I. Rudaz, Frank L. Wei, Daniel A. Steigerwald
  • PASSIVATION FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE
    Publication number: 20110297979
    Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.
    Type: Application
    Filed: June 7, 2010
    Publication date: December 8, 2011
    Applicants: PHILIPS LUMILEDS LIGHTING COMPANY, LLC, KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Frederic S. DIANA, Henry Kwong-Hin CHOY, Qingwei MO, Serge L. RUDAZ, Frank L. WEI, Daniel A, STEIGERWALD