Abstract: The present disclosure provides an inkjet ink comprising an aqueous vehicle and an encapsulated pigment dispersion. A process for encapsulating pigment dispersions is provided where a pigment is dispersed with a polymeric dispersant in an aqueous solvent system. The encapsulation process has at least two additions of encapsulating monomers followed by polymerization. To a pigment dispersed with a polymeric dispersant is added an encapsulating monomer(s) and a polymerization initiator is added which forms a stage 1 encapsulated pigment. Then a second encapsulating monomer(s) is added and these monomers are polymerized by a second addition of polymerization initiator, forming a second stage encapsulated pigment. The second encapsulating monomer(s) may be added continuously to the stage 1 encapsulated pigment. Such encapsulated pigment dispersions may be used in inkjet inks and are stable to heat, aging test conditions, and solvent challenges. Prints from these inks have better durability.

Abstract: A process for encapsulating pigment dispersions is provided where a pigment is dispersed with a polymeric dispersant in an aqueous solvent system. The encapsulation process has at least two additions of encapsulating monomers followed by polymerization. To a pigment dispersed with a polymeric dispersant is added an encapsulating monomer(s) and a polymerization initiator is added which forms a stage 1 encapsulated pigment. Then a second encapsulating monomer(s) is added and these monomers are polymerized by a second addition of polymerization initiator, forming a second stage encapsulated pigment. The second encapsulating monomer(s) may be added continuously to the stage 1 encapsulated pigment. Such encapsulated pigment dispersions may be used in inkjet inks and are stable to heat, aging test conditions, and solvent challenges. Prints from these inks have better durability.

Abstract: Disclosed is an insecticidal composition comprising by weight based on total weight of composition (a) from about 9 to about 91% of one or more anthranilic diamide insecticides; and (b) from about 9 to about 91% of a branched copolymer component having water solubility or dispersibility at least about 5% by weight at 20° C., wherein: the branched copolymer component comprises one or more branch segments attached to linear backbone segment; the branch segments comprise at least two repeating monomer units and have number average molecular weight (Mn) at least about 1,000; the branched copolymer component comprises hydrophilic groups; and ratio of component (b) to component (a) is about 1:10 to about 10:1 by weight. Also disclosed is a geotropic propagule coated with insecticidal composition. Further disclosed is a liquid composition comprising the insecticidal composition, and method for protecting a geotropic propagule and plant derived therefrom a phytophagous insect pest.

Abstract: A method for protecting a chuck membrane in a reactive ion etcher during plasma processing is described. The method utilizes a photoresist as a protective layer. Suitable photoresists can be used in this invention to not only image a semiconductor substrate to protect areas where vias and/or cavities are not desired during plasma processing but also to protect the chuck membrane(s) of the reactive ion etcher from being damaged and/or contaminated during plasma processing. Both negative-working and positive-working photoresists can be used.

Abstract: This disclosure relates to compositions and methods for using such compositions to provide protective coatings, particularly of electronic components. Fired-on-foil ceramic capacitors coated with a polybenzoxazole encapsulant which may be embedded in printed wiring boards are disclosed.

Abstract: Hydrofluoroalkanesulfonates of the general formula R—O—CXH—CX2—SO3M, where R is selected from the group consisting of alkyl groups, functionalized alkyl groups, and alkenyl groups; X is selected from the group consisting of hydrogen and fluorine with the proviso that at least one X is fluorine; and M is a cation, are made by reacting fluorovinyl ether with aqueous sulfite solution. Organic onium hydrofluoroalkanesulfonates are useful as ionic liquids and photoacid generators.

Abstract: Hydrofluoroalkanesulfonates of the general formula R—O—CXH—CX2—SO3M, where R is selected from the group consisting of alkyl groups, functionalized alkyl groups, and alkenyl groups; X is selected from the group consisting of hydrogen and fluorine with the proviso that at least one X is fluorine; and M is a cation, are made by reacting fluorovinyl ether with aqueous sulfite solution. Organic onium hydrofluoroalkanesulfonates are useful as ionic liquids and photoacid generators.

Abstract: The present invention relates to novel photoresist compositions and processes for preparing the same utilizing polymers having a low polydispersity via the use of certain chain transfer agents (CTA) with certain monomers to provide said polymers. The polymers incorporating the chain transfer agents can be homopolymers, or made with additional monomers to provide copolymers. These polymers/copolymers are then converted into photoresist compositions for use as such.

Abstract: Hydrofluoroalkanesulfonates of the general formula R—O—CXH—CX2—SO3M, where R is selected from the group consisting of alkyl groups, functionalized alkyl groups, and alkenyl groups; X is selected from the group consisting of hydrogen and fluorine with the proviso that at least one X is fluorine; and M is a cation, are made by reacting fluorovinyl ether with aqueous sulfite solution. Organic onium hydrofluoroalkanesulfonates are useful as ionic liquids and photoacid generators.

Abstract: A method for protecting a chuck membrane in a reactive ion etcher during plasma processing is described. The method utilizes a photoresist as a protective layer. Suitable photoresists can be used in this invention to not only image a semiconductor substrate to protect areas where vias and/or cavities are not desired during plasma processing but also to protect the chuck membrane(s) of the reactive ion etcher from being damaged and/or contaminated during plasma processing. Both negative-working and positive-working photoresists can be used.

Abstract: The invention pertains to low polydispersity acrylic polymers useful for photoimaging and photoresist compositions, and to the photoimaging processes which use these compositions. The low polydispersity polymers of this invention are prepared using controlled radical polymerization (CRP) techniques, such as RAFT (reversible addition fragmentation chain transfer) polymerization.

Abstract: This disclosure relates to compositions and methods for using such compositions to provide protective coatings, particularly of electronic components. Fired-on-foil ceramic capacitors coated with a polybenzoxazole encapsulant which may be embedded in printed wiring boards are disclosed.

Abstract: The present invention relates to novel unsaturated polycyclic compounds containing two fluoroalcohol substitutents. This invention also relates to homopolymers and copolymers derived from such unsaturated polycyclic compounds. The copolymers are useful for photoimaging compositions and, in particular, photoresist compositions (positive-working and/or negative-working) for imaging in the production of semiconductor devices. The polymers are especially useful in photoresist compositions having high UV transparency (particularly at short wavelengths, e.g., 157 nm) which are useful as base resins in resists and potentially in many other applications.

Abstract: The invention pertains to low polydispersity copolymers useful for photoimaging and photoresist compositions, and to the photoimaging processes which use these compositions. The low polydispersity copolymers of this invention are prepared using controlled radical polymerization (CRP) techniques, such as RAFT (reversible addition fragmentation chain transfer) polymerization.

Abstract: Positive photoresists and associated processes for microlithography in the ultraviolet (UV) and violet are disclosed. The photoresists comprise (a) a branched polymer containing protected acid groups and (b) at least one photoacid generator. The photoresists have high transparency throughout the UV, good development properties, high plasma etch resistance and other desirable properties, and are useful for microlithography in the near, far, and extreme UV, particularly at wavelengths less than or equal to 365 nm.

Abstract: Fluorinated polymers, photoresists and associated processes for microlithography are described. These polymers and photoresists are comprised of a fluoroalcohol functional group which simultaneously imparts high ultraviolet (UV) transparency and developability in basic media to these materials. The materials of this invention have high UV transparency, particularly at short wavelengths, e.g., 157 nm, which makes them highly useful for lithography at these short wavelengths.

Abstract: The present invention pertains to photoimaging and the use of photoresists (positive-working and/or negative-working) for imaging in the production of semiconductor devices. The present invention also pertains to novel hydroxy ester-containing polymer compositions that are useful as base resins in resists and potentially in many other applications.

Abstract: A fluorine-containing polymer prepared from at least a spacer group selected from the group consisting of ethylene, alpha-olefins, 1,1?-disubstituted olefins, vinyl alcohols, vinyl ethers, and 1,3-dienes; and a norbornyl radical containing a functional group containing the structure: —C(Rf)(Rf?)Orb wherein Rf and Rf? are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF2)n wherein n is an integer ranging from 2 to about 10 and Rb is a hydrogen atom or an acid- or base-labile protecting group; r is an integer ranging from 0-4. The fluorine-containing polymer has an absorption coefficient of less than 4.0 mm?1 at a wavelength of 157 nm. These polymers are useful in photoresist compositions for microlithography. They exhibit high transparency at this short wavelength and also possess other key properties, including good plasma etch resistance and adhesive properties.

Abstract: Nitrile/vinyl ether-containing polymers for photoresist compositions and microlithography methods employing the photoresist compositions are described. These photoresist compositions comprise 1) at least one ethylenically unsaturated compound comprised of a vinyl ether and 2) a nitrile-containing compound, e.g., acrylonitrile, which together impart high ultraviolet (UV) transparency and developability in basic media. In some embodiments, these photoresist compositions further comprise a fluoroalcohol group. The photoresist compositions of this invention have, high UV transparency, particularly at short wavelengths, e.g., 157 nm and 193 nm, which property makes them useful for lithography at these short wavelengths.

Abstract: Positive photoresists and associated processes for microlithography in the ultraviolet (UV) and violet are disclosed. The photoresists comprise (a) a branched copolymer containing protected acid groups and (b) at least one photoacid generator. The photoresists have high transparency throughout the UV, good development properties, high plasma etch resistance and other desirable properties, and are useful for microlithography in the near, far, and extreme UV, particularly at wavelengths less than or equal to 365 nm.