Abstract: Semiconductor module having a first substrate, a second substrate and a spacer distancing the substrates from each other, wherein the spacer is formed by at least one elastic shaped metal body.

Abstract: Semiconductor module including a semiconductor and including a shaped metal body that is electrically contacted by the semiconductor, for forming a contact surface for an electrical conductor, wherein the shaped metal body is bent or folded. A method is also described for establishing electrical contacting of an electrical conductor on a semiconductor, said method including the steps of: fastening a bent or folded shaped metal body of a constant thickness to the semiconductor by means of a first fastening method and then fastening the electrical conductor to the shaped metal body by means of a second fastening method.

Abstract: Sintering tool (10) with a cradle for receiving an electronic subassembly (BG) to be sintered, characterized by at least one support bracket (20), arranged at two locations opposite the cradle, for fixing a protective film (30) covering the electronic subassembly (BG).

Abstract: Sintering tool (10) with a cradle for receiving an electronic subassembly (BG) to be sintered, characterized by at least one support bracket (20), arranged at two locations opposite the cradle, for fixing a protective film (30) covering the electronic subassembly (BG).

Abstract: A method of assembling a semiconductor power module component 30 and a manufacturing system comprising such a semiconductor power module component and a pressing apparatus 20 for manufacturing a semiconductor power module component are described. The semiconductor power module component 30 comprises at least a first element 1, a second element 2 and a third element 3 arranged in a stack 10. The first element 1 and the second element 2 are joined by sintering in a sintering area 4 and the second element 2 and the third element 3 are joined by soldering in a soldering area 6. The sintering and the soldering are simultaneously executed, wherein the soldering area 6 is heated to a temperature of soldering and the sintering area 4 is heated to a temperature of sintering, the temperature of soldering and the temperature of sintering being harmonized to each other.

Abstract: A power module (10) having a leadframe (20), a power semiconductor (30) arranged on the leadframe (20), a base plate (40) for dispersing heat generated by the power semiconductor (30) and a potting compound (50) surrounding the leadframe (20) and the power semiconductor (30), that physically connects the power semiconductor (30) and/or the leadframe (20) to the base plate(40).

Abstract: Tool (10) for the lower die of a sintering device, the tool (10) having a rest (20) for an electronic subassembly (30) comprising a circuit carrier, to be sintered, where the rest (20) is formed from a material with a coefficient of linear expansion that is close to the coefficient of expansion of the circuit carrier of the electronic subassembly (30).

Abstract: Sintering tool (10) with a cradle for receiving an electronic subassembly (BG) to be sintered, characterized by at least one support bracket (20), arranged at two locations opposite the cradle, for fixing a protective film (30) covering the electronic subassembly (BG).

Abstract: One aspect relates to a method for manufacturing a substrate assembly for attachment to an electronic component A substrate is provided with a first side and a second side. A contact material layer is applied to the first side of the substrate. A pre-fixing agent is applied at least to sections of a side of the contact material layer facing away from the substrate.

Abstract: A method for manufacturing semiconductor chips (2, 3) having arranged thereon metallic shaped bodies (6), having the following steps: arranging a plurality of metallic shaped bodies (6) on a processed semiconductor wafer while forming a layer arranged between the semiconductor wafer and the metallic shaped bodies (6), exhibiting a first connection material (4) and a second connection material (5), and processing the first connection material (4) for connecting the metallic shaped bodies (6) to the semiconductor wafer without processing the second connecting material (5), wherein the semiconductor chips (2, 3) are separated either prior to arranging the metallic shaped bodies (6) on the semiconductor wafer or after processing the first connection material (4).

Abstract: Sintering device for sintering at least one electronic assembly, having a lower die and an upper die which is slidable towards the lower die, or a lower die which is slidable towards the upper die. The lower die forms a support for the assembly to be sintered and the upper die includes a receptacle for a pressure pad for exerting pressure directed towards the lower die, and a delimitation wall which laterally surrounds the pressure pad. The delimitation wall having an outer delimitation wall and an inner delimitation wall surrounded by the outer delimitation wall, the inner delimitation wall mounted so as to be slidable towards the outer delimitation wall and so as to be slid in the direction of the lower die such that, following the placing of the inner delimitation wall on the lower die, the pressure pad is displaceable in the direction of the lower die.

Abstract: A power module (10) having a leadframe (20), a power semiconductor (30) arranged on the leadframe (20), a base plate (40) for dispersing heat generated by the power semiconductor (30) and a potting compound (50) surrounding the leadframe (20) and the power semiconductor (30), that physically connects the power semiconductor (30) and/or the leadframe (20) to the base plate(40).

Abstract: A method for cohesively connecting a first component of a power semiconductor module to a second component of a power semiconductor module by sintering, the method comprising the steps of: applying a layer of unsintered sinter material to a predetermined bonding surface of the first component, arranging the second component on the surface layer of unsintered sinter material, attaching the second component to the first component by applying pressure and/or temperature on a locally delimited partial area within the predetermined bonding surface, processing the first and/or second component and/or other components of the power semiconductor module, and complete-area sintering of the sinter material.

Abstract: A power module (10) having a leadframe (20), a power semiconductor (30) arranged on the leadframe (20), a base plate (40) for dispersing heat generated by the power semiconductor (30) and a potting compound (50) surrounding the leadframe (20) and the power semiconductor (30), that physically connects the power semiconductor (30) and/or the leadframe (20) to the base plate (40).

Abstract: The present invention discloses a power semiconductor module, comprising: a substrate; a semiconductor provided on a top side of the substrate; and a package formed on the semiconductor and the substrate, wherein the package has openings at a top side thereof, through which terminal contacts of the semiconductor and the substrate are exposed outside and accessible from outside.

Abstract: An electronic sandwich structure which has at least a first and a second part to be joined, which are sintered together by means of a sintering layer. The sintering layer is formed as a substantially uninterrupted connecting layer, the density of which varies in such a way that at least one region of higher density and at least one region of lower density alternate with one another. A method for forming a sintering layer of an electronic sandwich structure, in which firstly a sintering material layer is applied substantially continuously to a first part to be joined as a connecting layer, this sintering material layer is subsequently dried and, finally, alternating regions of higher density and of lower density of the connecting layer are produced by sintering the first part to be joined with the sintering layer on a second part to be joined.

Abstract: The present invention discloses a cooling trough comprising an unflat surface, surrounding an opening of the cooling trough, configured with a height essentially decreasing inwardly. At least one supporting line, running around the opening of the cooling trough, is formed on the unflat surface. The at least one supporting line contacts a baseplate of a power module after the baseplate is attached to the unflat surface of the cooling trough. In addition, the present invention also discloses a cooler comprising the cooling trough and a power module assembly comprising the cooler.

Abstract: A description is given of an electronic sandwich structure which has at least a first and a second part to be joined, which are sintered together by means of a sintering layer. The sintering layer is formed as a substantially uninterrupted connecting layer, the density of which varies in such a way that at least one region of higher density and at least one region of lower density alternate with one another. A description is also given of a method for forming a sintering layer of an electronic sandwich structure, in which firstly a sintering material layer is applied substantially continuously to a first part to be joined as a connecting layer, this sintering material layer is subsequently dried and, finally, alternating regions of higher density and of lower density of the connecting layer are produced by sintering the first part to be joined with the sintering layer on a second part to be joined.

Abstract: A method for manufacturing a circuit carrier (100?) having a base plate (10), an organic insulating foil (20) arranged on the base plate (10) and a metal shaped body (30) arranged on the insulating foil (20), wherein the base plate (10), insulating foil (20) and metal shaped body (30) are connected to each other by applying a quasi-hydrostatic pressure acting from the top while maintaining an even insulating foil layer thickness.

Abstract: A power semiconductor contact structure for power semiconductor modules, which has at least one substrate 1 and a metal molded body 2 as an electrode, which are sintered one on top of the other by means of a substantially uninterrupted sintering layer 3a with regions of varying thickness. The metal molded body 2 takes the form here of a flexible contacting film 5 of such a thickness that this contacting film is sintered with its side 4 facing the sintering layer 3a onto the regions of varying thickness of the sintering layer substantially over the full surface area. A description is also given of a method for forming a power semiconductor contact structure in a power semiconductor module that has a substrate and a metal molded body.