Patents by Inventor Frank Pasquale
Frank Pasquale has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11443975Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.Type: GrantFiled: March 31, 2020Date of Patent: September 13, 2022Assignee: LAM RESEARCH CORPORATIONInventors: Patrick Breiling, Ramesh Chandrasekharan, Karl Leeser, Paul Konkola, Adrien LaVoie, Chloe Baldasseroni, Shankar Swaminathan, Ishtak Karim, Yukinori Sakiyama, Edmund Minshall, Sung Je Kim, Andrew Duvall, Frank Pasquale
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Patent number: 11127567Abstract: A substrate processing system includes: a processing chamber defining a reaction volume; a showerhead including: a stem portion having one end connected adjacent to an upper surface of the processing chamber; and a base portion connected to an opposite end of the stem portion and extending radially outwardly from the stem portion, where the showerhead is configured to introduce gas into the reaction volume; a plasma generator configured to selectively generate RF plasma in the reaction volume; and a collar arranged around the stem portion of the showerhead between the base portion of the showerhead and the upper surface of the processing chamber. The collar includes one or more holes to supply purge gas from an inner cavity of the collar to between the base portion of the showerhead and the upper surface of the processing chamber.Type: GrantFiled: May 4, 2020Date of Patent: September 21, 2021Assignee: LAM RESEARCH CORPORATIONInventors: Hu Kang, Adrien LaVoie, Shankar Swaminathan, Jun Qian, Chloe Baldasseroni, Frank Pasquale, Andrew Duvall, Ted Minshall, Jennifer Petraglia, Karl Leeser, David Smith, Sesha Varadarajan, Edward Augustyniak, Douglas Keil
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Publication number: 20200335304Abstract: A substrate processing system includes: a processing chamber defining a reaction volume; a showerhead including: a stem portion having one end connected adjacent to an upper surface of the processing chamber; and a base portion connected to an opposite end of the stem portion and extending radially outwardly from the stem portion, where the showerhead is configured to introduce gas into the reaction volume; a plasma generator configured to selectively generate RF plasma in the reaction volume; and a collar arranged around the stem portion of the showerhead between the base portion of the showerhead and the upper surface of the processing chamber. The collar includes one or more holes to supply purge gas from an inner cavity of the collar to between the base portion of the showerhead and the upper surface of the processing chamber.Type: ApplicationFiled: May 4, 2020Publication date: October 22, 2020Inventors: Hu Kang, Adrien LaVoie, Shankar Swaminathan, Jun Qian, Chloe Baldasseroni, Frank Pasquale, Andrew Duvall, Ted Minshall, Jennifer Petraglia, Karl Leeser, David Smith, Sesha Varadarajan, Edward Augustyniak, Douglas Keil
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Publication number: 20200227304Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.Type: ApplicationFiled: March 31, 2020Publication date: July 16, 2020Inventors: Patrick Breiling, Ramesh Chandrasekharan, Karl Leeser, Paul Konkola, Adrien LaVoie, Chloe Baldasseroni, Shankar Swaminathan, Ishtak Karim, Yukinori Sakiyama, Edmund Minshall, Sung Je Kim, Andrew Duvall, Frank Pasquale
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Publication number: 20200219757Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.Type: ApplicationFiled: March 16, 2020Publication date: July 9, 2020Inventors: Patrick BREILING, Ramesh Chandrasekharan, Karl Leeser, Paul Konkola, Adrien LaVoie, Chloe Baldasseroni, Shankar Swaminathan, lshtak Karim, Yukinori Sakiyama, Edmund Minshall, Sung Je Kim, Andrew Duvall, Frank Pasquale
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Patent number: 10665429Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.Type: GrantFiled: September 13, 2017Date of Patent: May 26, 2020Assignee: LAM RESEARCH CORPORATIONInventors: Hu Kang, Adrien LaVoie, Shankar Swaminathan, Jun Qian, Chloe Baldasseroni, Frank Pasquale, Andrew Duvall, Ted Minshall, Jennifer Petraglia, Karl Leeser, David Smith, Sesha Varadarajan, Edward Augustyniak, Douglas Keil
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Patent number: 10622243Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass through the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.Type: GrantFiled: February 13, 2017Date of Patent: April 14, 2020Inventors: Patrick Breiling, Ramesh Chandrasekharan, Karl Leeser, Paul Konkola, Adrien LaVoie, Chloe Baldasseroni, Shankar Swaminathan, Ishtak Karim, Yukinori Sakiyama, Edmund Minshall, Sung Je Kim, Andrew Duvall, Frank Pasquale
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Patent number: 10378107Abstract: A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.Type: GrantFiled: September 10, 2015Date of Patent: August 13, 2019Assignee: Lam Research CorporationInventors: Ramesh Chandrasekharan, Saangrut Sangplung, Shankar Swaminathan, Frank Pasquale, Hu Kang, Adrien LaVoie, Edward Augustyniak, Yukinori Sakiyama, Chloe Baldasseroni, Seshasayee Varadarajan, Basha Sajjad, Jennifer L. Petraglia
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Patent number: 10323323Abstract: A gas delivery system includes a first valve including an inlet that communicates with a first gas source. A first inlet of a second valve communicates with an outlet of the first valve and a second inlet of the second valve communicates with a second gas source. An inlet of a third valve communicates with a third gas source. A connector includes a first gas channel and a cylinder defining a second gas channel. The cylinder and the first gas channel collectively define a flow channel between an outer surface of the cylinder and an inner surface of the first gas channel. The flow channel communicates with the outlet of the third valve and the first end of the second gas channel. A third gas channel communicates with the second gas channel, with the outlet of the second valve and with a gas distribution device of a processing chamber.Type: GrantFiled: March 8, 2017Date of Patent: June 18, 2019Assignee: LAM RESEARCH CORPORATIONInventors: Ramesh Chandrasekharan, Jennifer O'Loughlin, Saangrut Sangplung, Shankar Swaminathan, Frank Pasquale, Chloe Baldasseroni, Adrien LaVoie
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Patent number: 9970108Abstract: A vapor delivery system includes an ampoule to store liquid precursor and a heater to partially vaporize the liquid precursor. A first valve communicates with a push gas source and the ampoule. A second valve supplies vaporized precursor to a heated injection manifold. A valve manifold includes a first node in fluid communication with an outlet of the heated injection manifold, a third valve having an inlet in fluid communication with the first node and an outlet in fluid communication with vacuum, a fourth valve having an inlet in fluid communication with the first node and an outlet in fluid communication with a second node, a fifth valve having an outlet in fluid communication with the second node, and a sixth valve having an outlet in fluid communication with the second node. A gas distribution device is in fluid communication with the second node.Type: GrantFiled: July 14, 2015Date of Patent: May 15, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Jun Qian, Hu Kang, Purushottam Kumar, Chloe Baldasseroni, Heather Landis, Andrew Kenichi Duvall, Mohamed Sabri, Ramesh Chandrasekharan, Karl Leeser, Shankar Swaminathan, David Smith, Jeremiah Baldwin, Eashwar Ranganathan, Adrien LaVoie, Frank Pasquale, Jeongseok Ha, Ingi Bae
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Publication number: 20180122685Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.Type: ApplicationFiled: February 13, 2017Publication date: May 3, 2018Inventors: Patrick Breiling, Ramesh Chandrasekharan, Karl Leeser, Paul Konkola, Adrien LaVoie, Chloe Baldasseroni, Shankar Swaminathan, lshtak Karim, Yukinori Sakiyama, Edmund Minshall, Sung Je Kim, Andrew Duvall, Frank Pasquale
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Patent number: 9920844Abstract: A gas delivery system for a substrate processing system includes first and second valves, a first gas channel, and a cylinder. The first valve includes a first inlet and a first outlet. The first outlet is in fluid communication with a processing chamber of the substrate processing system. The second valve includes a second inlet and a second outlet. The cylinder defines a second gas channel having a first end and a second end. The cylinder is at least partially disposed within the first gas channel such that the cylinder and the first gas channel collectively define a flow channel. The flow channel is in fluid communication with the first end of the second gas channel and with the first inlet. A third gas channel is in fluid communication with the second end of the second gas channel and with the second inlet.Type: GrantFiled: July 22, 2015Date of Patent: March 20, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Karl Leeser, Saangrut Sangplung, Shankar Swaminathan, Frank Pasquale, Chloe Baldasseroni, Ted Minshall, Adrien LaVoie
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Publication number: 20180068833Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.Type: ApplicationFiled: September 13, 2017Publication date: March 8, 2018Inventors: Hu Kang, Adrien LaVoie, Shankar Swaminathan, Jun Qian, Chloe Baldasseroni, Frank Pasquale, Andrew Duvall, Ted Minshall, Jennifer Petraglia, Karl Leeser, David Smith, Sesha Varadarajan, Edward Augustyniak, Douglas Keil
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Patent number: 9852901Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.Type: GrantFiled: September 2, 2016Date of Patent: December 26, 2017Assignee: LAM RESEARCH CORPORATIONInventors: Sesha Varadarajan, Shankar Swaminathan, Saangrut Sangplung, Frank Pasquale, Ted Minshall, Adrien Lavoie, Mohamed Sabri, Cody Barnett
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Patent number: 9793096Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.Type: GrantFiled: March 25, 2015Date of Patent: October 17, 2017Assignee: LAM RESEARCH CORPORATIONInventors: Hu Kang, Adrien LaVoie, Shankar Swaminathan, Jun Qian, Chloe Baldasseroni, Frank Pasquale, Andrew Duvall, Ted Minshall, Jennifer Petraglia, Karl Leeser, David Smith, Sesha Varadarajan, Edward Augustyniak, Douglas Keil
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Publication number: 20170175269Abstract: A gas delivery system includes a first valve including an inlet that communicates with a first gas source. A first inlet of a second valve communicates with an outlet of the first valve and a second inlet of the second valve communicates with a second gas source. An inlet of a third valve communicates with a third gas source. A connector includes a first gas channel and a cylinder defining a second gas channel. The cylinder and the first gas channel collectively define a flow channel between an outer surface of the cylinder and an inner surface of the first gas channel. The flow channel communicates with the outlet of the third valve and the first end of the second gas channel. A third gas channel communicates with the second gas channel, with the outlet of the second valve and with a gas distribution device of a processing chamber.Type: ApplicationFiled: March 8, 2017Publication date: June 22, 2017Inventors: Ramesh Chandrasekharan, Jennifer O'Loughlin, Saangrut Sangplung, Shankar Swaminathan, Frank Pasquale, Chloe Baldasseroni, Adrien LaVoie
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Patent number: 9631276Abstract: A gas delivery system includes a first valve including an inlet that communicates with a first gas source. A first inlet of a second valve communicates with an outlet of the first valve and a second inlet of the second valve communicates with a second gas source. An inlet of a third valve communicates with a third gas source. A connector includes a first gas channel and a cylinder defining a second gas channel. The cylinder and the first gas channel collectively define a flow channel between an outer surface of the cylinder and an inner surface of the first gas channel. The flow channel communicates with the outlet of the third valve and the first end of the second gas channel. A third gas channel communicates with the second gas channel, with the outlet of the second valve and with a gas distribution device of a processing chamber.Type: GrantFiled: July 22, 2015Date of Patent: April 25, 2017Assignee: LAM RESEARCH CORPORATIONInventors: Ramesh Chandrasekharan, Jennifer O'Loughlin, Saangrut Sangplung, Shankar Swaminathan, Frank Pasquale, Chloe Baldasseroni, Adrien LaVoie
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Patent number: 9617638Abstract: Disclosed are methods of depositing films of material on semiconductor substrates employing the use of a secondary purge. The methods may include flowing a film precursor into a processing chamber and adsorbing the film precursor onto a substrate in the processing chamber such that the precursor forms an adsorption-limited layer on the substrate. The methods may further include removing at least some unadsorbed film precursor from the volume surrounding the adsorbed precursor by purging the processing chamber with a primary purge gas, and thereafter reacting adsorbed film precursor while a secondary purge gas is flowed into the processing chamber, resulting in the formation of a film layer on the substrate. The secondary purge gas may include a chemical species having an ionization energy and/or a disassociation energy equal to or greater than that of O2. Also disclosed are apparatuses which implement the foregoing processes.Type: GrantFiled: July 30, 2014Date of Patent: April 11, 2017Assignee: Lam Research CorporationInventors: Adrien LaVoie, Hu Kang, Purushottam Kumar, Shankar Swaminathan, Jun Qian, Frank Pasquale, Chloe Baldasseroni
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Publication number: 20170016115Abstract: A gas delivery system includes a first valve including an inlet that communicates with a first gas source. A first inlet of a second valve communicates with an outlet of the first valve and a second inlet of the second valve communicates with a second gas source. An inlet of a third valve communicates with a third gas source. A connector includes a first gas channel and a cylinder defining a second gas channel. The cylinder and the first gas channel collectively define a flow channel between an outer surface of the cylinder and an inner surface of the first gas channel. The flow channel communicates with the outlet of the third valve and the first end of the second gas channel. A third gas channel communicates with the second gas channel, with the outlet of the second valve and with a gas distribution device of a processing chamber.Type: ApplicationFiled: July 22, 2015Publication date: January 19, 2017Inventors: Ramesh Chandrasekharan, Jennifer O'Loughlin, Saangrut Sangplung, Shankar Swaminathan, Frank Pasquale, Chloe Baldasseroni, Adrien LaVoie
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Publication number: 20160372318Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.Type: ApplicationFiled: September 2, 2016Publication date: December 22, 2016Inventors: Sesha VARADARAJAN, Shankar SWAMINATHAN, Saangrut SANGPLUNG, Frank PASQUALE, Ted MINSHALL, Adrien LAVOIE, Mohamed SABRI, Cody BARNETT