Abstract: A bidirectional switch and a method of the bidirectional switch including, a first enhancement mode n-channel metal oxide semiconductor field effect transistor (n-MOSFET) and a second n-MOSFET electrically connected in a common source configuration. The emitter of an insulated gate bipolar transistor (IGBT) is further electrically connected to the common sources of the n-MOSFET. A control board regulates a first operation of the IGBT and an operation of the first field effect transistor. The control board additionally receives at least one measured characteristic, from a sensor and determines the measured characteristic is below a predetermined threshold. The control board then regulates an operation of the second field effect transistor and a second operation of the IGBT.

Abstract: A Hall Effect sensor, including a toroid including a gap having opposed surfaces, which are substantially planar and substantially parallel to one another. The toroid further includes a central plane bisecting the opposed surfaces. A first Hall element sensor defining a first sensor plane is positioned at least partially within the gap of the toroid at a first angle and a second Hall element sensor is positioned at least partially within the gap of the toroid at a second angle substantially mutually perpendicular to each of the opposed surfaces. The central plane is substantially perpendicular to the opposed surfaces.

Abstract: A bidirectional switch and a method of the bidirectional switch including, a first enhancement mode n-channel metal oxide semiconductor field effect transistor (n-MOSFET) and a second n-MOSFET electrically connected in a common source configuration. The emitter of an insulated gate bipolar transistor (IGBT) is further electrically connected to the common sources of the n-MOSFET. A control board regulates a first operation of the IGBT and an operation of the first field effect transistor. The control board additionally receives at least one measured characteristic, from a sensor and determines the measured characteristic is below a predetermined threshold. The control board then regulates an operation of the second field effect transistor and a second operation of the IGBT.

Abstract: A Hall Effect sensor, including a toroid including a gap having opposed surfaces, which are substantially planar and substantially parallel to one another. The toroid further includes a central plane bisecting the opposed surfaces. A first Hall element sensor defining a first sensor plane is positioned at least partially within the gap of the toroid at a first angle and a second Hall element sensor is positioned at least partially within the gap of the toroid at a second angle substantially mutually perpendicular to each of the opposed surfaces. The central plane is substantially perpendicular to the opposed surfaces.

Abstract: Power controller includes a switching circuit that is configured to provide electrical power to a load. The switching circuit includes a first path having a first switch and a second path that is in parallel with the first path prior to the load. The second path includes a second switch. The switching circuit is in a soft-switching state when the second path is activated and the first path is deactivated. The switching circuit is in an operational state when the second path is deactivated and the first path is activated. The power controller includes a processing unit that is configured to open or close the first and second switches to change the switching circuit between the soft-switching state and the operational state.

Abstract: Power controller includes a switching circuit that is configured to provide electrical power to a load. The switching circuit includes a first path having a first switch and a second path that is in parallel with the first path prior to the load. The second path includes a second switch. The switching circuit is in a soft-switching state when the second path is activated and the first path is deactivated. The switching circuit is in an operational state when the second path is deactivated and the first path is activated. The power controller includes a processing unit that is configured to open or close the first and second switches to change the switching circuit between the soft-switching state and the operational state.