Patents by Inventor Frank R. Shepherd

Frank R. Shepherd has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film resistor for optoelectronic integrated circuits
    Patent number: 5960014
    Abstract: A thin film resistor for optoelectronic integrated circuits is described. A stable low resistance, thin film resistor comprising a bilayer of platinum on titanium is provided. Advantageously, the resistive layer is protected by a layer of dielectric, e.g. silicon dioxide or silicon nitride to reduce degradation from humidity an under high temperature operation at 300.degree. C. or more. The resistor may be formed on various substrates, including silicon dioxide, silicon nitride and semiconductor substrates. Applications for optoelectronic integrated circuits include integrated resistive heaters for wavelength fine tuning of a semiconductor laser array.
    Type: Grant
    Filed: November 24, 1997
    Date of Patent: September 28, 1999
    Assignee: Northern Telecom Limited
    Inventors: Guo Ping Li, Agnes Margittai, Trevor Jones, Joannie Marks, Frank R. Shepherd
  • Thin film transistors
    Patent number: 4459739
    Abstract: A thin film transistor has a semiconductor layer, an insulating layer and source, drain and gate electrodes. The improvement comprises creating an enhanced conductivity layer in the semiconductor by ion implantation or diffusion on phased deposition. The benefits of the enhanced conductivity layer are that transistor action is obtained without the conventional annealing step and DC stability is much improved.
    Type: Grant
    Filed: December 13, 1982
    Date of Patent: July 17, 1984
    Assignee: Northern Telecom Limited
    Inventors: Frank R. Shepherd, William D. Westwood
  • Thin film transistors
    Patent number: 4422090
    Abstract: A thin film transistor has a semiconductor layer, an insulating layer and source, drain and gate electrodes. The improvement comprises creating an enhanced conductivity layer in the semiconductor by ion implantation or diffusion on phased deposition. The benefits of the enhanced conductivity layer are that transistor action is obtained without the conventional annealing step and D.C. stability is much improved.
    Type: Grant
    Filed: May 26, 1981
    Date of Patent: December 20, 1983
    Assignee: Northern Telecom Limited
    Inventors: Frank R. Shepherd, William D. Westwood