Abstract: A method of packaging electronics comprises providing a first wafer and providing a second wafer. The method also comprises depositing a polymer material over a surface of the first wafer; and selectively removing a portion of the polymer from the first wafer to create a void in the polymer. The method also comprises placing the first wafer over the second wafer and in contact with the polymer; and curing the polymer to bond the first wafer to the second wafer. A bonded wafer structure is also described.

Abstract: A method of packaging electronics comprises providing a first wafer and providing a second wafer. The method also comprises depositing a polymer material over a surface of the first wafer; and selectively removing a portion of the polymer from the first wafer to create a void in the polymer. The method also comprises placing the first wafer over the second wafer and in contact with the polymer; and curing the polymer to bond the first wafer to the second wafer. A bonded wafer structure is also described.

Abstract: An attachment system. The attachment system includes a first structure and a second structure. The first structure has a surface and a recess in the surface. The second structure is molded into the recess and extends above the surface. The second structure adheres to the first structure at a boundary of the recess.

Abstract: A Film Bulk Acoustic (FBA) MEMS device in a wafer level package including a photostructurable glass material and methods of manufacture are described.

Abstract: In an embodiment, the invention provides a method for forming a wafer-level package. A bonding pad is formed on a first wafer. After forming the bonding pad, an optoelectronic device is located on the first wafer. A gasket is formed on a second wafer. After a gasket is formed on a second wafer, the second wafer is attached to the first wafer with a bond between the gasket and the bonding pad.

Abstract: A device includes a device substrate defining a pit in a topside of the device substrate, a film bulk-wave acoustic resonator (FBAR) mounted over the pit on the device substrate, a first contact pad on a backside of the device substrate that is coupled to a bottom electrode of the FBAR, and a second contact pad on the backside of the device substrate that is coupled to a top electrode of the FBAR.

Abstract: A gasket encloses a hermetically sealed environment between a cap wafer and a base wafer. The gasket is bonded to the base wafer using bonding material. The bonding material can be one or more of many substances that exhibit acceptable adhesion, sealing, and other properties that ensure a hermetically sealed environment. The gasket is carved out from the cap wafer material itself. The cap wafer is typically made of extremely strong and rigid material such as silicon. Since the gasket is made from the cap wafer, the gasket itself is also extremely strong and rigid.

Abstract: A wafer-level package includes a first wafer comprising a bonding pad, an optoelectronic device on the first wafer, and a second wafer comprising a gasket. The second wafer is attached to the first wafer by a bond between the gasket and the bonding pad.

Abstract: An apparatus includes a device chip having circuit elements fabricated on a substrate and a cap covering at least a portion of the device chip including the circuit elements such as thin film resonators. The placement of the cap on the device chip is sealed using a gasket having treaded surface for improved adhesion, cold weld deformation of gold, and decreased susceptibility to foreign particles resulting in a superior seal.

Abstract: A sloped via contact is used to connect a contact on the front side of a wafer to a contact on the back side of the wafer. The walls of a small (less than 50-80 microns wide) via have typically been difficult to coat with metal. The present invention forms a small via with sloped walls, allowing easy access to the inside walls of the via for metal sputtering or plating. The small via can be formed using a dry etch process such as the well-known deep reactive ion etching (DRIE) process. Using any isotropic plasma etch process, the walls of the via are further etched from the wafer backside to create sloped walls in the via. The via is then coated with metal to make it conductive.

Abstract: An apparatus includes a device chip having circuit elements fabricated on a substrate and a cap covering at least a portion of the device chip including the circuit elements such as thin film resonators. The placement of the cap on the device chip is sealed using a gasket having treaded surface for improved adhesion, cold weld deformation of gold, and decreased susceptibility to foreign particles resulting in a superior seal.

Abstract: A sloped via contact is used to connect a contact on the front side of a wafer to a contact on the back side of the wafer. The walls of a small (less than 50-80 microns wide) via have typically been difficult to coat with metal. The present invention forms a small via with sloped walls, allowing easy access to the inside walls of the via for metal sputtering or plating. The small via can be formed using a dry etch process such as the well-known deep reactive ion etching (DRIE) process. Using any isotropic plasma etch process, the walls of the via are further etched from the wafer backside to create sloped walls in the via. The via is then coated with metal to make it conductive.

Abstract: A gasket encloses a hermetically sealed environment between a cap wafer and a base wafer. The gasket is bonded to the base wafer using bonding material. The bonding material can be one or more of many substances that exhibit acceptable adhesion, sealing, and other properties that ensure a hermetically sealed environment. The gasket is carved out from the cap wafer material itself. The cap wafer is typically made of extremely strong and rigid material such as silicon. Since the gasket is made from the cap wafer, the gasket itself is also extremely strong and rigid.

Abstract: A method for separating dies on a wafer includes etching channels around the dies on a first side of the wafer, mounting the first side of the wafer to a quartz plate with an UV adhesive, and grinding a second side of the wafer until the channels are exposed on the second side of the wafer. At this point, the dies are separated but held together by the UV adhesive on the quartz plate. The method further includes mounting a second side of the wafer to a tack tape, exposing UV radiation through the quartz plate to the UV adhesive. At this point, the UV adhesive looses its adhesion so the dies are held together by the tack tape. The method further includes dismounting the quartz plate from the first side of the wafer and picking up the individual dies from the tack tape.

Abstract: A method for forming a wafer package includes forming a die structure, wherein the die structure includes a first wafer, a device mounted on the first wafer, a second wafer mounted atop the first wafer with a first seal ring around the device and a second seal ring around a via contact. The method further includes forming a trench in the second wafer around the first seal ring, filling the trench and the via contact with a sealing agent, patterning a topside of the second wafer to removed the excessive sealing agent and to expose a contact pad of the via contact, and singulating a die around the first seal ring.

Abstract: A method and apparatus for determining the hermeticity of a semiconductor package is disclosed. Gas is introduced into the semiconductor package during packaging. Vacuum suction is then applied to the package. If the package has any leaks, the gas within will escape. The package is next scanned using a spectrometer. If the spectrometer does not detect any gas within the package cavity, the package is not hermetically sealed. In an alternate embodiment, the device is packaged first, and then immersed in a pressurized liquid. If the package has a leak, the pressure on the liquid will force liquid into the package cavity. The cavity of a properly sealed package will remain empty and dry. The package is scanned using a spectrometer. If the spectrometer detects liquid within the package, the package is not hermetically sealed.

Abstract: A method and apparatus for determining the hermeticity of a semiconductor package is disclosed. Gas is introduced into the semiconductor package during packaging. Vacuum suction is then applied to the package. If the package has any leaks, the gas within will escape. The package is next scanned using a spectrometer. If the spectrometer does not detect any gas within the package cavity, the package is not hermetically sealed. In an alternate embodiment, the device is packaged first, and then immersed in a pressurized liquid. If the package has a leak, the pressure on the liquid will force liquid into the package cavity. The cavity of a properly sealed package will remain empty and dry. The package is scanned using a spectrometer. If the spectrometer detects liquid within the package, the package is not hermetically sealed.

Abstract: A method for separating dies on a wafer includes etching channels around the dies on a first side of the wafer, mounting the first side of the wafer to a quartz plate with an UV adhesive, and grinding a second side of the wafer until the channels are exposed on the second side of the wafer. At this point, the dies are separated but held together by the UV adhesive on the quartz plate. The method further includes mounting a second side of the wafer to a tack tape, exposing UV radiation through the quartz plate to the UV adhesive. At this point, the UV adhesive looses its adhesion so the dies are held together by the tack tape. The method further includes dismounting the quartz plate from the first side of the wafer and picking up the individual dies from the tack tape.

Abstract: An apparatus includes a device chip having circuit elements fabricated on a substrate and a cap covering at least a portion of the device chip including the circuit elements such as thin film resonators. The placement of the cap on the device chip is sealed using a gasket having treaded surface for improved adhesion, cold weld deformation of gold, and decreased susceptibility to foreign particles resulting in a superior seal.

Abstract: An apparatus includes a device chip having circuit elements fabricated on a substrate and a cap covering at least a portion of the device chip including the circuit elements such as thin film resonators. The placement of the cap on the device chip is sealed using a gasket having treaded surface for improved adhesion, cold weld deformation of gold, and decreased susceptibility to foreign particles resulting in a superior seal.