Abstract: Microlithographic projection exposure apparatus (100) has a projection lens (150) configured to image an object plane (155) onto an image plane (156), wherein an immersion liquid is at least temporarily provided during operation of the projection exposure apparatus between the projection lens and the image plane, wherein a measurement structure (121) is arranged in the immersion liquid, and wherein the measurement structure is configured to generate a measurement pattern. The projection exposure apparatus also has a measurement device (130, 160) configured to measure the measurement pattern. The measurement structure has an absorption layer (125) including silicon oxide and/or silicon oxynitride and/or nitride.

Abstract: Microlithographic projection exposure apparatus (100) has a projection lens (150) configured to image an object plane (155) onto an image plane (156), wherein an immersion liquid is at least temporarily provided during operation of the projection exposure apparatus between the projection lens and the image plane, wherein a measurement structure (121) is arranged in the immersion liquid, and wherein the measurement structure is configured to generate a measurement pattern. The projection exposure apparatus also has a measurement device (130, 160) configured to measure the measurement pattern. The measurement structure has an absorption layer (125) including silicon oxide and/or silicon oxynitride and/or nitride.

Abstract: There is provided a process for forming a contained second layer over a first layer, including the steps: forming the first layer including a fluorinated material and a photoinitiator, and having a first surface energy; treating the first layer with a priming layer including an aromatic amine compound; exposing the priming layer patternwise with activating radiation, resulting in exposed areas and unexposed areas; developing the priming layer to effectively remove the priming layer from the unexposed areas resulting in a first layer having a patterned priming layer, wherein the patterned priming layer has a second surface energy that is higher than the first surface energy; and forming the second layer by liquid deposition on the patterned priming layer on the first layer.

Abstract: There is provided a process for forming a contained second layer over a first layer, including the steps: forming the first layer including a fluorinated material and a photoinitiator, and having a first surface energy; treating the first layer with a priming layer including an aromatic amine compound; exposing the priming layer patternwise with activating radiation, resulting in exposed areas and unexposed areas; developing the priming layer to effectively remove the priming layer from the unexposed areas resulting in a first layer having a patterned priming layer, wherein the patterned priming layer has a second surface energy that is higher than the first surface energy; and forming the second layer by liquid deposition on the patterned priming layer on the first layer.

Abstract: The present invention relates to novel unsaturated polycyclic compounds containing two fluoroalcohol substitutents. This invention also relates to homopolymers and copolymers derived from such unsaturated polycyclic compounds. The copolymers are useful for photoimaging compositions and, in particular, photoresist compositions (positive-working and/or negative-working) for imaging in the production of semiconductor devices. The polymers are especially useful in photoresist compositions having high UV transparency (particularly at short wavelengths, e.g., 157 nm) which are useful as base resins in resists and potentially in many other applications.

Abstract: Hydrofluoroalkanesulfonates of the general formula R—O—CXH—CX2—SO3M, where R is selected from the group consisting of alkyl groups, functionalized alkyl groups, and alkenyl groups; X is selected from the group consisting of hydrogen and fluorine with the proviso that at least one X is fluorine; and M is a cation, are made by reacting fluorovinyl ether with aqueous sulfite solution. Organic onium hydrofluoroalkanesulfonates are useful as ionic liquids and photoacid generators.

Abstract: The present invention relates to novel photoresist compositions and processes for preparing the same utilizing polymers having a low polydispersity via the use of certain chain transfer agents (CTA) with certain monomers to provide said polymers. The polymers incorporating the chain transfer agents can be homopolymers, or made with additional monomers to provide copolymers. These polymers/copolymers are then converted into photoresist compositions for use as such.

Abstract: The present invention provides novel fluorine-containing copolymers which comprise at least one fluorinated olefin, at least one polycyclic ethylenically unsaturated monomer with a fused 4-membered heterocyclic ring and, optionally, other components. The copolymers are useful for photoimaging compositions and, in particular, photoresist compositions (positive-working and/or negative-working) for imaging in the production of semiconductor devices. The copolymers are especially useful in photoresist compositions having high UV transparency (particularly at short wavelengths, e.g., 157 nm) which are useful as base resins in resists and potentially in many other applications.

Abstract: This invention provides a fluorine-containing copolymer having a repeat unit derived from at least one fluorinated olefin and a repeat unit derived from at least one polycyclic ethylenically unsaturated monomer having pendant hydroxyl or esterified hydroxyl groups, and optionally other repeat units, typically derived from an acrylate. These polymers have high transparency at short wavelengths such as 193 nm and 157 nm, and provide good plasma etch resistance and adhesive properties. Also provided are photoresist compositions and substrates coated therewith.

Abstract: This invention provides novel fluorine containing polymers which comprise at least one fluorinated olefin, at least one polycyclic ethylenically unsaturated monomer with a fused 4-membered carbocyclic ring and, optionally, other components. The polymers are useful for photoimaging compositions and, in particular, photoresist compositions (positive-working and/or negative-working) for imaging in the production of semiconductor devices. The polymers are especially useful in photoresist compositions having high UV transparency (particularly at short wavelengths, e.g., 157 nm) which are useful as base resins in resists and potentially in many other applications.

Abstract: The invention relates to a photoresist composition comprising a polymeric binder; a photoactive component; and at least one dissolution inhibitor comprising a paraffinic or cycloparaffinic compound containing at least one functional group having the structure —C(Rf)(Rf?)OR wherein Rf and Rf? are the same or different fluoroalkyl groups of from one to about ten carbon atoms or taken together are (CF2)a wherein a is an integer ranging from 2 to about 10 and R is a hydrogen atom or an acid labile protecting group. Typically, the dissolution inhibitor has an absorption coefficient of less than about 4.0 ?m at a wavelength of 157 nm.

Abstract: The invention provides a polymer having (a) at least one repeat unit derived from an ethylenically unsaturated compound having at least one fluorine atom covalently attached to an ethylenically unsaturated carbon atom; and (b) at least one repeat unit derived from an ethylenically unsaturated cyclic compound of structure: (I) wherein n is 0, 1, or 2; and R2 to R4 are independently H; C1-C10 alkyl or alkoxy, optionally substituted by halogen or ether oxygens; or C6-C20 aryl. These polymers can be used in making photoresist compositions and coated substrates.

Abstract: Fluorinated polymers useful in photoresist compositions and associated processes for microlithography are described. These polymers and photoresists have a fluoroalcohol functional group that simultaneously imparts high ultraviolet (UV) transparency and developability in basic media. The polymers also have a repeat unit derived from a C1-C25 alkyl hydroxymethylacrylate comonomer, e.g., tert-butyl hydroxymethylacrylate, or a C5-C50 polycyclic alkyl acrylate in which the polycyclic group contains a hydroxy group, e.g., hydroxyadamantyl acrylate. The materials of this invention have high UV tansparency, particularly at short wavelengths, e.g., 193 nm and 157 nm, which makes them highly useful for lithography at these short wavelengths.

Abstract: The invention relates to a photoresist composition having a protecting group and a protected material incorporated in a cyclic chemical structure. In this invention a protected material has a cyclic ether group or cyclic ester group as a protecting group. A specific example of a cyclic ether group is an alkylene oxide, such as an oxetane group, substituted with one or more fluorinated alkyl groups. A specific example of a cyclic ester is a lactone which may be substituted with methyl groups. The photoresist composition further includes a photoactive component. The photoresist composition of this invention has a high transparency to ultraviolet radiation, particularly at short wavelengths such as 193 nm and 157 nm.

Abstract: The invention pertains to low polydispersity acrylic polymers useful for photoimaging and photoresist compositions, and to the photoimaging processes which use these compositions. The low polydispersity polymers of this invention are prepared using controlled radical polymerization (CRP) techniques, such as RAFT (reversible addition fragmentation chain transfer) polymerization.

Abstract: The invention pertains to low polydispersity copolymers useful for photoimaging and photoresist compositions, and to the photoimaging processes which use these compositions. The low polydispersity copolymers of this invention are prepared using controlled radical polymerization (CRP) techniques, such as RAFT (reversible addition fragmentation chain transfer) polymerization.

Abstract: A photoresist composition having: (A) a polymer selected from the group consisting of: (a) a fluorine-containing copolymer having a repeat unit derived from at least one ethylenically unsaturated compound characterized in that at least one ethylenically unsaturated compound is polycyclic; (b) a branched polymer containing protected acid groups, said polymer comprising one or more branch segment(s) chemically linked along a linear backbone segment; (c) fluoropolymers having at least one fluoroalcohol group having the structure: —C(Rf)(Rf?)OH, wherein Rf and Rf? are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF2)n wherein n is 2 to 10; (d) amorphous vinyl homopolymers of perfluoro(2,2-dimethyl-1,3-dioxole) or CX2?CY2 where X?F or CF3 and Y?—H or amorphous vinyl copolymers of perfluoro(2,2-dimethyl-1,3-dioxole) and CX2?CY2; and (e) nitrile/fluoroalcohol-containing polymers prepared from substituted or unsubstituted vinyl ethers; (B) at least one photoactive

Abstract: A flexible, aqueous processible, photoimagable coverlay compositions, having advantageous adhesion and release properties and resistance to (unwanted) haloing. The coverlay compositions of the present invention comprise an acrylic, low Tg, graft copolymer binder component, having an alkali resistant backbone-segment and a pendant arm segment comprising hydrophilic moieties. Optionally, the coverlay further comprises a thiophene-type adhesion promoter to further improve adhesion properties.

Abstract: There is disclosed a composition comprising a mixture of endo- and exo-2-(bicyclo[2.2.1]hept-5-en-2-yl)-2,2-fluoroalkyl-ethan-2-ol which is rich in the exo isomer, preferably the endo/exo concentration ratio is no greater than 5/95. The composition is useful for forming a repeat unit of a polymer which polymer may further comprise additional repeat units derived from tert-butyl acrylate, hydroxyadamantyl acrylate, protected or unprotected fluorinated olefins, 2-methyl-2-adamantyl acrylate, 2-propenoic acid, 2-hydroxy-1,1,2-trimethylpropyl ester. Polymers of this invention are useful as the binder component of a photoresist composition for microlithography.

Abstract: Positive photoresists and associated processes for microlithography in the ultraviolet (UV) and violet are disclosed. The photoresists comprise (a) a branched polymer containing protected acid groups and (b) at least one photoacid generator. The photoresists have high transparency throughout the UV, good development properties, high plasma etch resistance and other desirable properties, and are useful for microlithography in the near, far, and extreme UV, particularly at wavelengths less than or equal to 365 nm.