Patents by Inventor Frank Scornavacca

Frank Scornavacca has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4303467
    Abstract: Gas plasma process and gas mixture useful for the removal of materials in the manufacture of semiconductor devices. Substrate wafers or other semiconductor devices are exposed to a gaseous plasma containing SiF.sub.4 or SiF.sub.4 and oxygen for a time sufficient to effect a desired removal of material from the wafer or device. The process and gas are particularly suitable for selective etching of Si.sub.3 N.sub.4 and the stripping of photoresist, as well as the etching of materials such as silicon and compounds containing silicon.
    Type: Grant
    Filed: November 11, 1977
    Date of Patent: December 1, 1981
    Assignee: Branson International Plasma Corporation
    Inventors: Frank Scornavacca, Richard L. Bersin