Abstract: An ion implanter that includes an ion source to generate an ion beam, a platen disposed in a process chamber to support a workpiece that is treated with the ion beam, and a plasma flood gun that results in fewer particles in the process chamber is disclosed. The plasma flood gun includes at least one plasma chamber, each having at least one aperture through which low energy ions and electrons are emitted. A sweeper is located near the aperture, positioned so as to be between the aperture and the upstream components. The sweeper is heated using resistive elements or a halogen lamp so as to elevate its temperature, which limited the amount of deposition that occurs on the sweeper.

Abstract: An ion implanter, including an ion source and extraction system, arranged to generate an ion beam at a first ion energy, and a linear accelerator, arranged to accelerate the ion beam to a second ion energy, wherein the linear accelerator comprises a plurality of acceleration stages coupled to receive a plurality of RF signals from a plurality of power assemblies, respectively. The linear accelerator may be configured wherein at least one stage of the plurality of acceleration stages is coupled to: reversibly connect to a first power assembly, comprising a resonator that contains a resonator enclosure, the first power assembly generating a first RF signal at a first frequency; to disconnect from the first power assembly; and to connect to a second power assembly, generating a second RF signal at a second frequency, greater than the first frequency, while not changing the resonator enclosure.

Abstract: An ion implanter may include an ion source, arranged to generate a continuous ion beam, a DC acceleration system, to accelerate the continuous ion beam, as well as an AC linear accelerator to receive the continuous ion beam and to output a bunched ion beam. The ion implanter may also include an energy spreading electrode assembly, to receive the bunched ion beam and to apply an RF voltage between a plurality of electrodes of the energy spreading electrode assembly, along a local direction of propagation of the bunched ion beam.

Abstract: An ion implanter. The ion implanter may include an ion source to generate an ion beam, and a linear accelerator, downstream to the ion source. The linear accelerator may include a buncher system to receive the ion beam and output a bunched ion beam, and a plurality of acceleration stages, to accelerate the bunched ion beam. The buncher system may include at least one RF buncher, a controller to adjust at least one control parameter of the at least one RF buncher over a plurality of instances; and a beam monitor, disposed downstream of the at least one RF buncher, and arranged to perform a plurality of beam measurements of the bunched ion beam over the plurality of instances. As such, the controller may be further arranged to determine a focal length of the buncher based upon the plurality of beam measurements.

Abstract: An apparatus, including an electrodynamic mass analysis (EDMA) assembly. The EDMA assembly may include a first upper electrode, disposed above a beam axis; and a first lower electrode, disposed below the beam axis, opposite the first upper electrode, the EDMA assembly arranged to receive a first RF voltage signal at a first frequency. The apparatus may include a deflection assembly, disposed downstream to the EDMA assembly, the deflection assembly comprising a blocker, disposed along the beam axis. The apparatus may include an energy spread reducer (ESR), disposed downstream to the deflection assembly, the energy spread reducer arranged to receive a second RF voltage signal at a second frequency, twice the first frequency. The ESR may include an upper ESR electrode, disposed above the beam axis; and a lower ESR electrode, disposed below the beam axis.

Abstract: An ion implanter, including an ion source and extraction system, arranged to generate an ion beam at a first ion energy, and a linear accelerator, arranged to accelerate the ion beam to a second ion energy, wherein the linear accelerator comprises a plurality of acceleration stages coupled to receive a plurality of RF signals from a plurality of power assemblies, respectively. The linear accelerator may be configured wherein at least one stage of the plurality of acceleration stages is coupled to: reversibly connect to a first power assembly, comprising a resonator that contains a resonator enclosure, the first power assembly generating a first RF signal at a first frequency; to disconnect from the first power assembly; and to connect to a second power assembly, generating a second RF signal at a second frequency, greater than the first frequency, while not changing the resonator enclosure.

Abstract: A dose cup assembly that results in less particles in a process chamber is disclosed. The dose cup assembly includes a faceplate attached to a back wall of the process chamber, and having an opening; an aperture plate defining a plurality of slots; and a tunnel having walls and sidewalls and having a proximal end and a distal end, located between the faceplate and the aperture plate, such that the proximal end is nearer to the faceplate and the distal end is nearer to the aperture plate; wherein at least one of the faceplate, the walls, the sidewalls or the aperture plate has one or more exposed outer surfaces that comprise silicon. The exposed outer surfaces may be silicon. In some embodiments, the faceplate, the walls, the sidewalls or the aperture plate may be graphite, aluminum, or stainless steel which is coated with silicon or silicon carbide.

Abstract: A method to operate an ion implanter. The method may include conducting an ion beam into an acceleration stage of a linear accelerator in the ion implanter, where the ion beam is a bunched ion beam. The method may also include applying an RF signal to the acceleration stage while the ion beam passes through the acceleration stage, the RF signal comprising a determined frequency and a determined amplitude, and performing a phase scan using the RF signal. The phase scan may include varying a phase of the RF signal at the acceleration stage over a plurality of phase values; and recording a plurality of arrival times at a monitor, situated downstream of the acceleration stage, the plurality of arrival times corresponding to the plurality of phase values, respectively.

Abstract: An ion implanter. The ion implanter may include an ion source to generate an ion beam; and a linear accelerator, to transport and accelerate the ion beam, the linear accelerator comprising a plurality of acceleration stages. A given acceleration stage of the plurality of acceleration stages may include an RF power supply, arranged to output an RF signal, and a drift tube assembly, arranged to transmit the ion beam, and coupled to the RF power supply. The given stage may also include a resonator, the resonator comprising a resonator enclosure, having a tapered shape, wherein the resonator enclosure has a first width in a middle location, a second width at a first end and a third width at a second end, wherein the first width is greater than the second width and greater than the third width.

Abstract: An apparatus may include a drift tube assembly, comprising a plurality of drift tubes to conduct an ion beam along a beam propagation direction. The plurality of drift tubes may define a multi-gap configuration corresponding to a plurality of acceleration gaps, wherein the plurality of drift tubes further define a plurality of RF quadrupoles, respectively. As such, the plurality of quadrupoles are arranged to defocus the ion beam along a first direction at the plurality of acceleration gaps, respectively, where the first direction extends perpendicularly to the beam propagation direction.

Abstract: Embodiments herein are directed to a linear accelerator assembly for an ion implanter. In some embodiments, a LINAC may include a coil resonator and a plurality of drift tubes coupled to the coil resonator by a set of flexible leads.

Abstract: A load lock in which the pumping speed is controlled so as to minimize the possibility of condensation is disclosed. The load lock is in communication with a vacuum pump and a valve. A controller is used to control the valve such that the supersaturation ratio within the load lock does not exceed a predetermined threshold, which is less than or equal to the critical value at which vapor condenses. In certain embodiments, a computer model is used to generate a profile, which may be a pumping speed profile or a pressure profile, and the valve is controlled according to the profile. In another embodiment, the load lock comprises a temperature sensor and a pressure sensor. The controller may calculate the supersaturation ratio based on these parameters and control the valve accordingly.

Abstract: An ion implanter may include an ion source to generate an ion beam. The ion implanter may include a set of beamline components to direct the ion beam to a substrate along a beam axis, as well as a process chamber to house the substrate to receive the ion beam. The ion implanter may include a conoscopy system, comprising: an illumination source to direct light to a substrate position; a first polarizer, having a first polarization axis, disposed between the illumination source and the substrate position; a second polarizer, the second polarizer being disposed to receive the light after passing through the substrate position. The conoscopy system may include a lens, to receive the light after passing through the substrate position, and a detector, to detect the light after passing through the lens.

Abstract: An ion implanter, including an ion source generating an ion beam, a set of beamline components directing the ion beam to a substrate along a beam axis, normal to a reference plane, a process chamber housing the substrate to receive the ion beam, and a conoscopy system. The conoscopy system may include: an illumination source directing light to a substrate position, a first polarizer assembly, comprising a first polarizer element and first pair of lenses, disposed on opposite sides of the first polarizer element, and arranged to focus the light at the substrate position; a second polarizer assembly, disposed to receive the light after passing through the substrate position, including a second polarizer element and a second pair of lenses disposed on opposite sides of the second polarizer element, and arranged to focus the light at a sensor, disposed in a detector plane of a detector.

Abstract: A method of stress management in a substrate, using angled ion implantation to introduced anisotropic stress within the substrate.

Abstract: An exciter for a high frequency resonator. The exciter may include an exciter coil inner portion, extending along an exciter axis, an exciter coil loop, disposed at a distal end of the exciter coil inner portion. The exciter may also include a drive mechanism, including at least a rotation component to rotate the exciter coil loop around the exciter axis.

Abstract: An ion implanter that includes an ion source to generate an ion beam, a platen disposed in a process chamber to support a workpiece that is treated with the ion beam, and a plasma flood gun that results in fewer particles in the process chamber is disclosed. The plasma flood gun includes at least one plasma chamber, each having at least one aperture through which low energy ions and electrons are emitted. A sweeper is located near the aperture, positioned so as to be between the aperture and the upstream components. The sweeper is heated using resistive elements or a halogen lamp so as to elevate its temperature, which limited the amount of deposition that occurs on the sweeper.

Abstract: An apparatus, including an electrodynamic mass analysis (EDMA) assembly. The EDMA assembly may include a first upper electrode, disposed above a beam axis; and a first lower electrode, disposed below the beam axis, opposite the first upper electrode, the EDMA assembly arranged to receive a first RF voltage signal at a first frequency. The apparatus may include a deflection assembly, disposed downstream to the EDMA assembly, the deflection assembly comprising a blocker, disposed along the beam axis. The apparatus may include an energy spread reducer (ESR), disposed downstream to the deflection assembly, the energy spread reducer arranged to receive a second RF voltage signal at a second frequency, twice the first frequency. The ESR may include an upper ESR electrode, disposed above the beam axis; and a lower ESR electrode, disposed below the beam axis.

Abstract: An apparatus may include an electrodynamic mass analysis (EDMA) assembly disposed downstream from the convergent ion beam assembly. The EDMA assembly may include a first stage, comprising a first upper electrode, disposed above a beam axis, and a first lower electrode, disposed below the beam axis, opposite the first upper electrode. The EDMA assembly may also include a second stage, disposed downstream of the first stage and comprising a second upper electrode, disposed above the beam axis, and a second lower electrode, disposed below the beam axis. The EDMA assembly may further include a deflection assembly, disposed between the first stage and the second stage, the deflection assembly comprising a blocker, disposed along the beam axis, an upper deflection electrode, disposed on a first side of the blocker, and a lower deflection electrode, disposed on a second side of the blocker.