Patents by Inventor Frank Sinclair

Frank Sinclair has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210343500
    Abstract: Embodiments herein are directed to a resonator for an ion implanter. In some embodiments, a resonator may include a housing, and a first coil and a second coil partially disposed within the housing. Each of the first and second coils may include a first end including an opening for receiving an ion beam, and a central section extending helically about a central axis, wherein the central axis is parallel to a beamline of the ion beam, and wherein an inner side of the central section has a flattened surface.
    Type: Application
    Filed: July 16, 2021
    Publication date: November 4, 2021
    Applicant: APPLIED Materials, Inc.
    Inventors: Costel Biloiu, Michael Honan, Robert B. Vopat, David Blahnik, Charles T. Carlson, Frank Sinclair, Paul Murphy
  • Publication number: 20210305011
    Abstract: A system and method that is capable of measuring the incident angle of an ion beam, especially an ion beam comprising heavier ions, is disclosed. In one embodiment, X-rays, rather than ions, are used to determine the channeling direction. In another embodiment, the workpiece is constructed, at least in part, of a material having a high molecular weight such that heaver ion beams can be measured. Further, in another embodiment, the parameters of the ion beam are measured across an entirety of the beam, allowing components of the ion implantation system to be further tuned to create a more uniform beam.
    Type: Application
    Filed: March 24, 2020
    Publication date: September 30, 2021
    Inventors: Frank Sinclair, Jonathan Gerald England, Joseph C. Olson
  • Patent number: 11127557
    Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: September 21, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
  • Publication number: 20210287872
    Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.
    Type: Application
    Filed: March 12, 2020
    Publication date: September 16, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
  • Patent number: 11120966
    Abstract: An IHC ion source that employs a negatively biased cathode and one or more side electrodes is disclosed. The one or more side electrodes are biased using an electrode power supply, which supplies a voltage of between 0 and ?50 volts, relative to the chamber. By adjusting the output from the electrode power supply, beam current can be optimized for different species. For example, certain species, such as arsenic, may be optimized when the side electrodes are at the same voltage as the chamber. Other species, such as boron, may be optimized when the side electrodes are at a negative voltage relative to the chamber. In certain embodiments, a controller is in communication with the electrode power supply so as to control the output of the electrode power supply, based on the desired feed gas.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: September 14, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Shengwu Chang, Frank Sinclair, Michael St. Peter
  • Patent number: 11114277
    Abstract: An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.
    Type: Grant
    Filed: June 3, 2020
    Date of Patent: September 7, 2021
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Jun Lu, Frank Sinclair, Eric D. Hermanson, Joseph E. Pierro, Michael D. Johnson, Michael S. DeLucia, Antonella Cucchetti
  • Patent number: 11094504
    Abstract: Embodiments herein are directed to a resonator for an ion implanter. In some embodiments, a resonator may include a housing, and a first coil and a second coil partially disposed within the housing. Each of the first and second coils may include a first end including an opening for receiving an ion beam, and a central section extending helically about a central axis, wherein the central axis is parallel to a beamline of the ion beam, and wherein an inner side of the central section has a flattened surface.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: August 17, 2021
    Assignee: APPLIED Materials, Inc.
    Inventors: Costel Biloiu, Michael Honan, Robert B Vopat, David Blahnik, Charles T. Carlson, Frank Sinclair, Paul Murphy
  • Publication number: 20210210307
    Abstract: Embodiments herein are directed to a resonator for an ion implanter. In some embodiments, a resonator may include a housing, and a first coil and a second coil partially disposed within the housing. Each of the first and second coils may include a first end including an opening for receiving an ion beam, and a central section extending helically about a central axis, wherein the central axis is parallel to a beamline of the ion beam, and wherein an inner side of the central section has a flattened surface.
    Type: Application
    Filed: January 6, 2020
    Publication date: July 8, 2021
    Applicant: APPLIED Materials, Inc.
    Inventors: Costel Biloiu, Michael Honan, Robert B. Vopat, David Blahnik, Charles T. Carlson, Frank Sinclair, Paul Murphy
  • Patent number: 11056319
    Abstract: An ion beam processing apparatus may include a plasma chamber, and a plasma plate, disposed alongside the plasma chamber, where the plasma plate defines a first extraction aperture. The apparatus may include a beam blocker, disposed within the plasma chamber and facing the extraction aperture. The apparatus may further include a non-planar electrode, disposed adjacent the beam blocker and outside of the plasma chamber; and an extraction plate, disposed outside the plasma plate, and defining a second extraction aperture, aligned with the first extraction aperture.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: July 6, 2021
    Assignee: APPLIED Materials, Inc.
    Inventors: Costel Biloiu, Appu Naveen Thomas, Tyler Rockwell, Frank Sinclair, Christopher Campbell
  • Patent number: 11049691
    Abstract: A system and method for optimizing a ribbon ion beam in a beam line implantation system is disclosed. The system includes a mass resolving apparatus having a resolving aperture, in which the resolving aperture may be moved in the X and Z directions. Additionally, a controller is able to manipulate the mass analyzer and quadrupole lenses so that the crossover point of desired ions can also be moved in the X and Z directions. By manipulating the crossover point and the resolving aperture, the parameters of the ribbon ion beam may be manipulated to achieve a desired result. Movement of the crossover point in the X direction may affect the mean horizontal angle of the beamlets, while movement of the crossover point in the Z direction may affect the horizontal angular spread and beam current.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: June 29, 2021
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Robert C. Lindberg, Eric D. Hermanson, Frank Sinclair, Antonella Cucchetti, Randy Martin, Michael D. Johnson, Ana Samolov, Svetlana B. Radovanov
  • Publication number: 20210183609
    Abstract: Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 17, 2021
    Applicant: APPLIED Materials, Inc.
    Inventors: Alexandre Likhanskii, Antonella Cucchetti, Eric D. Hermanson, Frank Sinclair, Jay T. Scheuer, Robert C. Lindberg
  • Publication number: 20210159043
    Abstract: An apparatus is provided. The apparatus may include a main chamber, an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber; an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween, and an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit tunnel. The electrode assembly may include an upper electrode, disposed on a first side of the beam path, and a plurality of lower electrodes, disposed on a second side of the beam path, the plurality of lower electrodes comprising at least three electrodes.
    Type: Application
    Filed: February 4, 2021
    Publication date: May 27, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Alexandre Likhanskii, Frank Sinclair, Shengwu Chang
  • Patent number: 11011343
    Abstract: Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.
    Type: Grant
    Filed: August 16, 2019
    Date of Patent: May 18, 2021
    Assignee: APPLIED Materials, Inc.
    Inventors: Alexandre Likhanskii, Shengwu Chang, Frank Sinclair, Antonella Cucchetti, Eric D Hermanson, Christopher Campbell
  • Publication number: 20210090845
    Abstract: Provided herein are approaches for controlling an ion beam using an electrostatic filter with curved electrodes. In some embodiments, a system may include an electrostatic filter receiving an ion beam, the filter including first and second electrodes disposed opposite sides of an ion beam line, each of the first and second electrodes having a central region between first and second ends, wherein a distance between a first outer surface of the first electrode and a second outer surface of the second electrode varies along an electrode length axis extending between the first and second ends. The system may further include a power supply in communication with the electrostatic filter, the power supply operable to supply a voltage and a current to the first and second electrodes, wherein the variable distance between the first and second outer surfaces causes the ion beam to converge or diverge.
    Type: Application
    Filed: September 19, 2019
    Publication date: March 25, 2021
    Applicant: APPLIED Materials, Inc.
    Inventors: Robert C. Lindberg, Alexandre Likhanskii, Wayne LeBlanc, Frank Sinclair, Svetlana Radovanov
  • Publication number: 20210066019
    Abstract: An IHC ion source that employs a negatively biased cathode and one or more side electrodes is disclosed. The one or more side electrodes are biased using an electrode power supply, which supplies a voltage of between 0 and ?50 volts, relative to the chamber. By adjusting the output from the electrode power supply, beam current can be optimized for different species. For example, certain species, such as arsenic, may be optimized when the side electrodes are at the same voltage as the chamber. Other species, such as boron, may be optimized when the side electrodes are at a negative voltage relative to the chamber. In certain embodiments, a controller is in communication with the electrode power supply so as to control the output of the electrode power supply, based on the desired feed gas.
    Type: Application
    Filed: January 6, 2020
    Publication date: March 4, 2021
    Inventors: Shengwu Chang, Frank Sinclair, Michael St. Peter
  • Publication number: 20210066017
    Abstract: An IHC ion source that employs a negatively biased cathode and one or more side electrodes is disclosed. The one or more side electrodes are left electrically unconnected in certain embodiments and are grounded in other embodiments. The floating side electrodes may be beneficial in the formation of certain species. In certain embodiments, a relay is used to allow the side electrodes to be easily switched between these two modes. By changing the configuration of the side electrodes, beam current can be optimized for different species. For example, certain species, such as arsenic, may be optimized when the side electrodes are at the same voltage as the chamber. Other species, such as boron, may be optimized when the side electrodes are left floating relative to the chamber. In certain embodiments, a controller is in communication with the relay so as to control which mode is used, based on the desired feed gas.
    Type: Application
    Filed: January 6, 2020
    Publication date: March 4, 2021
    Inventors: Shengwu Chang, Frank Sinclair, Michael St. Peter
  • Patent number: 10937624
    Abstract: An apparatus is provided. The apparatus may include a main chamber, an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber; an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween, and an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit tunnel. The electrode assembly may include an upper electrode, disposed on a first side of the beam path, and a plurality of lower electrodes, disposed on a second side of the beam path, the plurality of lower electrodes comprising at least three electrodes.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: March 2, 2021
    Assignee: APPLIED Materials, Inc.
    Inventors: Alexandre Likhanskii, Frank Sinclair, Shengwu Chang
  • Publication number: 20210035779
    Abstract: An ion beam processing apparatus may include a plasma chamber, and a plasma plate, disposed alongside the plasma chamber, where the plasma plate defines a first extraction aperture. The apparatus may include a beam blocker, disposed within the plasma chamber and facing the extraction aperture. The apparatus may further include a non-planar electrode, disposed adjacent the beam blocker and outside of the plasma chamber; and an extraction plate, disposed outside the plasma plate, and defining a second extraction aperture, aligned with the first extraction aperture.
    Type: Application
    Filed: July 29, 2019
    Publication date: February 4, 2021
    Applicant: APPLIED Materials, Inc.
    Inventors: Costel Biloiu, Appu Naveen Thomas, Tyler Rockwell, Frank Sinclair, Christopher Campbell
  • Publication number: 20210020399
    Abstract: Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.
    Type: Application
    Filed: August 16, 2019
    Publication date: January 21, 2021
    Applicant: APPLIED Materials, Inc.
    Inventors: Alexandre Likhanskii, Shengwu Chang, Frank Sinclair, Antonella Cucchetti, Eric D Hermanson, Christopher Campbell
  • Patent number: 10886098
    Abstract: An apparatus may include a main chamber, an entrance tunnel, having an entrance axis extending into the main chamber, and an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween. The apparatus may include an electrode assembly, disposed in the main chamber, on a lower side of the exit tunnel; and a catch assembly, disposed within the main chamber, in a line of sight from an exterior aperture of the exit tunnel.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: January 5, 2021
    Assignee: APPLIED Materials, Inc.
    Inventors: Alexandre Likhanskii, Frank Sinclair, Shengwu Chang, Eric D. Hermanson, Nevin H. Clay