Abstract: A method of stress management in a substrate, using angled ion implantation to introduced anisotropic stress within the substrate.

Abstract: An exciter for a high frequency resonator. The exciter may include an exciter coil inner portion, extending along an exciter axis, an exciter coil loop, disposed at a distal end of the exciter coil inner portion. The exciter may also include a drive mechanism, including at least a rotation component to rotate the exciter coil loop around the exciter axis.

Abstract: An ion implanter that includes an ion source to generate an ion beam, a platen disposed in a process chamber to support a workpiece that is treated with the ion beam, and a plasma flood gun that results in fewer particles in the process chamber is disclosed. The plasma flood gun includes at least one plasma chamber, each having at least one aperture through which low energy ions and electrons are emitted. A sweeper is located near the aperture, positioned so as to be between the aperture and the upstream components. The sweeper is heated using resistive elements or a halogen lamp so as to elevate its temperature, which limited the amount of deposition that occurs on the sweeper.

Abstract: An apparatus may include an electrodynamic mass analysis (EDMA) assembly disposed downstream from the convergent ion beam assembly. The EDMA assembly may include a first stage, comprising a first upper electrode, disposed above a beam axis, and a first lower electrode, disposed below the beam axis, opposite the first upper electrode. The EDMA assembly may also include a second stage, disposed downstream of the first stage and comprising a second upper electrode, disposed above the beam axis, and a second lower electrode, disposed below the beam axis. The EDMA assembly may further include a deflection assembly, disposed between the first stage and the second stage, the deflection assembly comprising a blocker, disposed along the beam axis, an upper deflection electrode, disposed on a first side of the blocker, and a lower deflection electrode, disposed on a second side of the blocker.

Abstract: An apparatus, including an electrodynamic mass analysis (EDMA) assembly. The EDMA assembly may include a first upper electrode, disposed above a beam axis; and a first lower electrode, disposed below the beam axis, opposite the first upper electrode, the EDMA assembly arranged to receive a first RF voltage signal at a first frequency. The apparatus may include a deflection assembly, disposed downstream to the EDMA assembly, the deflection assembly comprising a blocker, disposed along the beam axis. The apparatus may include an energy spread reducer (ESR), disposed downstream to the deflection assembly, the energy spread reducer arranged to receive a second RF voltage signal at a second frequency, twice the first frequency. The ESR may include an upper ESR electrode, disposed above the beam axis; and a lower ESR electrode, disposed below the beam axis.

Abstract: An apparatus may include a cyclotron to receive an ion beam as an incident ion beam at an initial energy, and output the ion beam as an accelerated ion beam at an accelerated ion energy. The apparatus may further include an RF source to output an RF power signal to the cyclotron chamber, the RF power source comprising a variable power amplifier, and a movable stripper, translatable to intercept the ion beam within the cyclotron at a continuum of different positions.

Abstract: An apparatus may include a drift tube assembly having a plurality of drift tubes to conduct an ion beam along a beam propagation direction. The plurality of drift tubes may define a multi-gap configuration corresponding to a plurality of acceleration gaps, wherein at least one powered drift tube of the drift tube assembly is coupled to receive an RF voltage signal. The apparatus may also include a DC electrode assembly that includes a conductor line, arranged within a resonator coil that is coupled to receive a DC voltage signal into the at least one powered drift tube. The DC electrode assembly may also include a DC electrode arrangement, connected to the conductor line and disposed within the at least one powered drift tube.

Abstract: An ion implanter and a method for reducing particle formation in a process chamber are disclosed. The ion implanter includes one or more gas sources in communication with the process chamber to introduce an oxygen-containing gas. After certain criteria has been met, a gas treatment process is initiated. This criteria may be related to the number of workpieces that have been processed or based on the number of particles detected in the process chamber. During the gas treatment process, the oxygen-containing gas is introduced and interacts with depositions disposed on the walls of the process chamber to transform the brittle film into a softer more pliable film that may be less susceptible to breaking. In some embodiments, the oxygen-containing gas may be oxygen gas, ozone or oxygen radicals which are introduced to the process chambers. In some embodiments, water vapor is introduced.

Abstract: Disclosed systems and techniques are directed to correct an out-of-plane deformation (OPD) of a substrate. The techniques include obtaining, using optical inspection data, an OPD profile of the substrate and obtaining a polynomial representation of the OPD profile to determine a plurality of polynomial coefficients characterizing respective elemental deformation shapes of the substrate. The techniques further include identifying one or more cylindric decompositions of a quadratic part of the OPD profile and computing, using a selected cylindric decomposition of the one or more cylindric decompositions, one or more characteristics of a stress-compensation layer (SCL) for the substrate. The techniques further include causing the SCL to be deposited on the substrate and the SCL to be exposed to a stress-mitigation beam.

Abstract: Disclosed systems and techniques are directed to correcting an out-of-plane (OPD) deformation of a substrate by causing a stress-compensation layer (SCL) to be deposited on the substrate, obtaining, using optical inspection data, a profile of the OPD of the substrate. The techniques further include obtaining a dataset with a representation of an influence function for the substrate, the influence function characterizing a deformation response of the substrate caused by a point-like mechanical influence. The techniques further include performing a regression computation to determine, based at least on the profile of the OPD of the substrate and the influence function, a distribution of a stress-mitigation irradiation of the SCL that mitigate the OPD of the substrate. The techniques further include performing, using the determined distribution of the stress-mitigation irradiation, a stress-mitigation irradiation of the SCL.

Abstract: Disclosed systems and techniques are directed to correct an out-of-plane deformation (OPD) of a substrate (e.g., wafer) by identifying, using optical inspection data, a profile of the OPD of the substrate and performing a polynomial decomposition of the profile to determine polynomial coefficients characterizing elemental deformation shapes of the substrate. The techniques further include identifying, based on the polynomial coefficients, characteristics of a stress-compensation layer (SCL) for the substrate and causing the SCL to be deposited on the substrate. The techniques further include performing statistical simulations to identify settings for a non-uniform stress-mitigation irradiation of the SCL, by sampling from one or more statistical distributions associated with previously performed stress-mitigation irradiations, and performing the non-uniform stress-mitigation irradiation of the SCL using the identified settings.

Abstract: Disclosed systems and techniques are directed to correct an out-of-plane deformation (OPD) of a substrate. The techniques include obtaining, using optical inspection data, a profile of the out-of-plane deformation of the substrate and identifying, using the obtained profile, one or more parameters characterizing a saddle-shaped stress of the substrate. The techniques further include computing, using the one or more identified parameters, one or more characteristics of a stress-compensation layer (SCL) for the substrate and causing the SCL to be deposited on the substrate. The techniques further include causing a stress-mitigation beam to be applied to a plurality of edge regions of the SCL, wherein settings of the stress-mitigation beam are determined using the one or more identified parameters.

Abstract: A dose cup assembly that results in less particles in a process chamber is disclosed. The dose cup assembly includes a faceplate attached to a back wall of the process chamber, and having an opening; an aperture plate defining a plurality of slots; and a tunnel having walls and sidewalls and having a proximal end and a distal end, located between the faceplate and the aperture plate, such that the proximal end is nearer to the faceplate and the distal end is nearer to the aperture plate; wherein at least one of the faceplate, the walls, the sidewalls or the aperture plate has one or more exposed outer surfaces that comprise silicon. The exposed outer surfaces may be silicon. In some embodiments, the faceplate, the walls, the sidewalls or the aperture plate may be graphite, aluminum, or stainless steel which is coated with silicon or silicon carbide.

Abstract: An ion implanter to facilitate channeling of an ion beam into a crystalline structure of a workpiece is disclosed. The ion implanter comprises an ion source to generate an ion beam, a platen to support the workpiece having the crystalline structure, an Xray source to generate an Xray beam, wherein at least a portion of the Xray beam impacts the workpiece to produce diffracted Xrays, an Xray detector positioned to receive the diffracted Xrays, and a controller, in communication with the Xray source, the platen, and the Xray detector. The controller contains instructions, which enable the ion implanter to perform a rocking curve test after the workpiece is disposed on the platen and calculate an orientation of the platen for an ion implant process based on a result of the rocking curve test to facilitate channeling of the ion beam into the crystalline structure of the workpiece.

Abstract: An ion implanter to facilitate channeling of an ion beam into a crystalline structure of a workpiece is disclosed. The ion implanter comprises an ion source to generate an ion beam, a platen to support the workpiece having the crystalline structure, an Xray source to generate an Xray beam, wherein at least a portion of the Xray beam impacts the workpiece to produce diffracted Xrays, an Xray detector positioned to receive the diffracted Xrays, and a controller, in communication with the Xray source, the platen, and the Xray detector. The controller contains instructions, which enable the ion implanter to perform a rocking curve test after the workpiece is disposed on the platen and calculate an orientation of the platen for an ion implant process based on a result of the rocking curve test to facilitate channeling of the ion beam into the crystalline structure of the workpiece.

Abstract: A system comprising a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on the spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The plurality of platens may extend outward from the central hub and workpieces are electrostatically clamped to the platens. The plurality of platens may also be capable of rotation. The central hub also controls the rotation of each of the platens about an axis orthogonal to the rotation axis of the central hub. In this way, variable angle implants may be performed. Additionally, this allows the workpieces to be mounted while in a horizontal orientation.

Abstract: Embodiments herein are directed to a linear accelerator assembly for an ion implanter. In some embodiments, a LINAC may include a coil resonator and a plurality of drift tubes coupled to the coil resonator by a set of flexible leads.

Abstract: An apparatus may include a drift tube assembly, comprising a plurality of drift tubes to conduct an ion beam along a beam propagation direction. The plurality of drift tubes may define a multi-gap configuration corresponding to a plurality of acceleration gaps, wherein the plurality of drift tubes further define a plurality of RF quadrupoles, respectively. As such, the plurality of quadrupoles are arranged to defocus the ion beam along a first direction at the plurality of acceleration gaps, respectively, where the first direction extends perpendicularly to the beam propagation direction.

Abstract: A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include an extraction plate including an extraction aperture, the extraction plate having a non-planar shape, and generating an extracted ion beam at a high angle of incidence with respect to a perpendicular to a plane of a substrate, when the plane of the substrate is arranged parallel to the side of the plasma chamber.