Patents by Inventor Frank Sinclair

Frank Sinclair has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • APPARATUS TO CONTROL AN ION BEAM
    Publication number: 20150108362
    Abstract: An apparatus to control an ion beam includes a scanner configured in an first state to scan the ion beam wherein the scanner outputs the ion beam as a diverging ion beam; a collimator configured to receive along a side of the collimator the diverging ion beam and to output the diverging ion beam as a collimated ion beam; a beam adjustment component that extends proximate the side of the collimator; and a controller configured to send a first signal when the scanner is in the first state to the beam adjustment component to adjust ion trajectories of the diverging ion beam from a first set of trajectories to a second set of trajectories.
    Type: Application
    Filed: January 24, 2014
    Publication date: April 23, 2015
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kenneth H. Purser, Christopher Campbell, Frank Sinclair, Robert C. Lindberg, Joseph C. Olson
  • Platen control
    Patent number: 9012337
    Abstract: A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed.
    Type: Grant
    Filed: October 11, 2011
    Date of Patent: April 21, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Shengwu Chang, Joseph C. Olson, Frank Sinclair, Matthew P. McClellan, Antonella Cucchetti
  • Apparatus and techniques for controlling ion implantation uniformity
    Patent number: 9006692
    Abstract: A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: April 14, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Stanislav S. Todorov, George M. Gammel, Richard Allen Sprenkle, Norman E. Hussey, Frank Sinclair, Shengwu Chang, Joseph C. Olson, David Roger Timberlake, Kurt T. Decker-Lucke
  • Dual stage scanner for ion beam control
    Patent number: 8993980
    Abstract: An ion beam scanner includes a first scanner stage having a first opening to transmit an ion beam, the first scanner stage to generate, responsive to a first oscillating deflection signal, a first oscillating deflecting field within the first opening; a second scanner stage disposed downstream of the first scanner stage and having a second opening to transmit the ion beam, the second scanner stage to generate, responsive to a second oscillating deflection signal, a second oscillating deflecting field within the second opening that is opposite in direction to the first oscillating deflecting field, and a scan controller to synchronize the first oscillating deflection signal and second oscillating deflection signal to generate a plurality of ion trajectories when the scanned ion beam exits the second stage that define a common focal point.
    Type: Grant
    Filed: January 24, 2014
    Date of Patent: March 31, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kenneth H. Purser, Christopher Campbell, Frank Sinclair, Robert C. Lindberg, Joseph C. Olson
  • Techniques for processing photoresist features using ions
    Patent number: 8952344
    Abstract: A method of treating a substrate includes directing first ions over a first range of angles to one or more photoresist features disposed on the substrate, the first ions effective to generate an altered layer in the one or more photoresist features, the altered surface layer encapsulating an inner portion of the one or more photoresist features, and directing second ions different from the first ions over a second range of angles to the one or more photoresist features, the second ions effective to generate gaseous species in the inner regions of the one or more photoresist features.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: February 10, 2015
    Assignee: Varian Semiconductor Equipment Associates
    Inventors: Frank Sinclair, Ludovic Godet, Patrick M. Martin, Armah Kpissay
  • Current lead with a configuration to reduce heat load transfer in an alternating electrical current environment
    Patent number: 8933335
    Abstract: A current lead with a configuration to reduce heat load transfer in an alternating electrical current (AC) environment is disclosed. The current lead may comprise a conductive material having a configuration for reducing heat load transfer across the current lead when an alternating electrical current (AC) is applied to the current lead. A temperature gradient a may be exhibited along a length of the current lead.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: January 13, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Gregory Citver, Frank Sinclair, D. Jeffrey Lischer, Nandishkumar Desai
  • Dual mode ion implanter
    Patent number: 8884244
    Abstract: A system for dual mode operation in an ion implanter may include a movable beam blocker to adjust beam width of an ion beam in a first direction perpendicular to a first local direction of propagation of the ion beam. The system may further include a scanner to scan the ion beam in a second direction perpendicular to a second local direction of propagation of the ion beam when in a first state and to transmit the ion beam unperturbed in a second state; and mode selector to send a set of signals to the movable beam blocker and to the scanner in order to adjust the width of the ion beam and state of the scanner in concert.
    Type: Grant
    Filed: January 24, 2014
    Date of Patent: November 11, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kenneth H. Purser, Christopher Campbell, Frank Sinclair, Robert C. Lindberg, Joseph C. Olson
  • APPARATUS AND TECHNIQUES FOR CONTROLLING ION IMPLANTATION UNIFORMITY
    Publication number: 20140326179
    Abstract: A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold.
    Type: Application
    Filed: September 25, 2013
    Publication date: November 6, 2014
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Stanislav S. Todorov, George M. Gammel, Richard Allen Sprenkle, Norman E. Hussey, Frank Sinclair, Shengwu Chang, Joseph C. Olson, David Roger Timberlake, Kurt T. Decker-Lucke
  • Apparatus and techniques for controlling ion implantation uniformity
    Patent number: 8853653
    Abstract: A system to control an ion beam in an ion implanter includes a detector system to detect a plurality of beam current measurements of the ion beam at a first frequency and an analysis component to determine a variation of the ion beam based upon the plurality of beam current measurements, the variation corresponding to a beam current variation of the ion beam at a second frequency different from the first frequency. The system also includes an adjustment component to adjust the ion beam in response to an output of the analysis component to reduce the variation, wherein the analysis component and the adjustment component are configured to dynamically reduce the variation of the ion beam below a threshold value while the ion beam is generated in the ion implanter.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: October 7, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Stanislav S. Todorov, George M. Gammel, Richard Allen Sprenkle, Norman E. Hussey, Frank Sinclair, Shengwu Chang, Joseph C. Olson, David Roger Timberlake, Kurt T. Decker-Lucke
  • Apparatus and techniques for controlling ion angular spread
    Patent number: 8841631
    Abstract: An electrostatic scanner to scan an ion beam in an ion implanter. The electrostatic scanner may include a first scan plate having a first inner surface that faces the ion beam, the first inner surface having a concave shape in a first plane that is perpendicular to a direction of propagation of the ion beam, and a second scan plate opposite the first scan plate separated by a gap to accept the ion beam the second scan plate having a second inner surface that faces the ion beam and a convex shape in the first plane, the first scan plate and second scan plate configured to generate an electrostatic field in the gap to scan the ion beam back and forth along a horizontal direction perpendicular to the direction of propagation of the ion beam.
    Type: Grant
    Filed: March 21, 2014
    Date of Patent: September 23, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Frank Sinclair, Joseph C. Olson, Edward W. Bell, Danielle Feldman
  • Apparatus and Method for Improved Perpendicular Recording Medium Using Ion Implantation in a Magnetic Field
    Publication number: 20140272180
    Abstract: In one embodiment, a system for treating a magnetic layer includes an ion source to generate an ion beam containing ions of a desired species. The system may also include a magnetic alignment apparatus downstream of the ion source and proximate to the substrate, wherein the magnetic alignment apparatus is operable to apply a magnetic field to the magnetic layer in the substrate along a direction out of plane relative to the magnetic layer.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 18, 2014
    Inventors: Alexander C. Kontos, Frank Sinclair, Rajesh Dorai
  • APPARATUS AND METHOD FOR ION IMPLANTATION IN A MAGNETIC FIELD
    Publication number: 20140272181
    Abstract: In one embodiment, a system for treating a magnetic layer includes an ion generating apparatus for directing an ion beam to the substrate and a magnetic alignment apparatus downstream of the ion generating apparatus and proximate to the substrate and operative to generate a magnetic field that intercepts the substrate in an out of plane orientation with respect to a plane of the substrate. The magnetic alignment apparatus and ion generating apparatus generate a process region in which the ion beam and magnetic field overlap.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 18, 2014
    Inventors: Alexander C. Kontos, Frank Sinclair, Rajesh Dorai
  • Reduction of deposition by separation of ion beam and neutral flow
    Patent number: 8835879
    Abstract: Ion implantation systems that separate the flow of ions from the flow of neutral particles are disclosed. The separation of neutral particles from ions can be achieved by manipulating the flow of ions in the system through variations in electrical or magnetic fields disposed within the implantation system. The path of neutral particles is less affected by electrical and magnetic fields than ions. The separation of these flows may also be accomplished by diverting the neutral particles from the ion beam, such as via an introduced gas flow or a flow blockage. Both separation techniques can be combined in some embodiments.
    Type: Grant
    Filed: June 3, 2013
    Date of Patent: September 16, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Frank Sinclair, Greg Citver, Timothy J. Miller
  • Magnetic storage device
    Patent number: 8830616
    Abstract: A write head for a magnetic storage device includes a writing tip comprising a magnetic material, a write pulse generator configured to generate a write pulse signal comprising a varying voltage bias between the magnetic storage device and the writing tip. The write pulse signal comprising one or more write pulses effective to tunnel electrons from the writing tip to the magnetic storage device. The data stream generator configured to provide a data stream signal to the writing tip where the data stream signal is operative to vary spin polarity in the electrons from a first polarity to a second polarity.
    Type: Grant
    Filed: December 4, 2012
    Date of Patent: September 9, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Frank Sinclair, Alexander C. Kontos, Rajesh Dorai
  • Media carrier
    Patent number: 8746666
    Abstract: A media carrier, adapted to hold a plurality of pieces of magnetic media, is disclosed. This media carrier can be placed on the workpiece support, or platen, allowing the magnetic media to be processed. In some embodiments, the media carrier is designed such that only one side of the magnetic media is exposed, requiring a robot or other equipment to invert each piece of media in the carrier to process the second side. In other embodiments, the media carrier is designed such that both sides of the magnetic media are exposed. In this scenario, the media carrier is inverted on the platen to allow processing of the second side.
    Type: Grant
    Filed: May 5, 2011
    Date of Patent: June 10, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Richard Hertel, Julian Blake, Edward Macintosh, Alexander Kontos, Frank Sinclair, Christopher Rowland, Mayur Jagtap, Sankar Ganesh Kolappan
  • Technique for manufacturing bit patterned media
    Patent number: 8709533
    Abstract: A technique for manufacturing hit pattern media is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for manufacturing bit pattern media. The method may comprise forming an intermediate layer comprising a modified region and a first region adjacent to one another, where the modified region and the first region may have at least one different property; depositing magnetic species on the first region of the intermediate layer to form an active region; and depositing non-ferromagnetic species on the modified region of the intermediate layer to form a separator.
    Type: Grant
    Filed: September 8, 2011
    Date of Patent: April 29, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Frank Sinclair, Julian G. Blake
  • Ion beam measurement system and method
    Patent number: 8698108
    Abstract: A system of measuring ion beam current in a process chamber using conductive liners is disclosed. A conductive liner is used to shield the walls of the process chamber. An ion measuring device, such as an ammeter, is used to measure the current created by the ions that impact the conductive liner. In some embodiments, a mechanism to contain secondary electrons generated in the process chamber is employed. Additionally, the ions that impact the scan system or workpiece may also be measured, thereby allowing the current of the entire ion beam to be measured.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: April 15, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Joseph P. Dzengeleski, Eric Hermanson, Robert J. Mitchell, Tyler Rockwell, James W. Wilkinson, James Paul Buonodono, Frank Sinclair
  • APPARATUS FOR FLOAT GROWN CRYSTALLINE SHEETS
    Publication number: 20140096713
    Abstract: An apparatus for forming a crystalline sheet from a melt may include a crucible to contain the melt. The apparatus may also include a cold block configured to deliver a cold region proximate a surface of the melt, the cold region operative to generate a crystalline front of the crystalline sheet and a crystal puller configured to draw the crystalline sheet in a pull direction along the surface of the melt, wherein a perpendicular to the pull direction forms an angle with respect to the crystalline front of less than ninety degrees and greater than zero degrees.
    Type: Application
    Filed: October 9, 2012
    Publication date: April 10, 2014
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Frank Sinclair, Peter L. Kellerman
  • Mask system and method of patterning magnetic media
    Patent number: 8679356
    Abstract: A method of patterning a substrate, comprises patterning a photoresist layer disposed on the substrate using imprint lithography and etching exposed portions of a hard mask layer disposed between the patterned photoresist layer and the substrate. The method may also comprise implanting ions into a magnetic layer in the substrate while the etched hard mask layer is disposed thereon.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: March 25, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Alexander C. Kontos, Frank Sinclair, Anthony Renau
  • Plasma attenuation for uniformity control
    Patent number: 8659229
    Abstract: A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.
    Type: Grant
    Filed: May 16, 2011
    Date of Patent: February 25, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Peter Kurunczi, Frank Sinclair, Costel Biloiu, Ludovic Godet, Ernest Allen