Patents by Inventor Frank Sobel
Frank Sobel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10352764Abstract: An optoelectronic module that includes a reflectance member which exhibits mitigated or eliminated fan-out field-of-view overlap can be concealed or its visual impact minimized compared to a host device in which the optoelectronic module is mounted. In some instances, the reflectance member can be implemented as a plurality of through holes and in other instances the reflectance member may be a contiguous spin-coated polymeric coating. In general, the reflectance member can be diffusively reflective to the same particular wavelengths or ranges of wavelengths as the host device in which it is mounted.Type: GrantFiled: September 23, 2016Date of Patent: July 16, 2019Assignee: ams Sensors Singapore Pte. Ltd.Inventors: Jens Geiger, Frank Sobel, Rene Kromhof, Alberto Soppelsa, Kevin Hauser, Robert Lenart
-
Patent number: 10215909Abstract: The waveguide structure can be manufactured on wafer-scale and comprises a holding structure and a first and a second waveguides each having a core and two end faces. The holding structure comprises a separation structure being arranged between the first and the second waveguide and provides an optical separation between the first and the second waveguide in a region between the end faces of the first and second waveguides. A method for manufacturing such a waveguide structure with at least one waveguide comprises shaping replication material by means of tool structures to obtain the end faces, hardening the replication material and removing the tool structures from a waveguide structures wafer comprising a plurality of so-obtained waveguides.Type: GrantFiled: May 30, 2018Date of Patent: February 26, 2019Assignee: Heptagon Micro Optics Pte. Ltd.Inventors: Simon Gubser, Frank Sobel, Alexander Bietsch, Jens Geiger
-
Publication number: 20180372943Abstract: The waveguide structure can be manufactured on wafer-scale and comprises a holding structure and a first and a second waveguides each having a core and two end faces. The holding structure comprises a separation structure being arranged between the first and the second waveguide and provides an optical separation between the first and the second waveguide in a region between the end faces of the first and second waveguides. A method for manufacturing such a waveguide structure with at least one waveguide comprises shaping replication material by means of tool structures to obtain the end faces, hardening the replication material and removing the tool structures from a waveguide structures wafer comprising a plurality of so-obtained waveguides.Type: ApplicationFiled: May 30, 2018Publication date: December 27, 2018Applicant: Heptagon Micro Optics Pte. Ltd.Inventors: Simon Gubser, Frank Sobel, Alexander Bietsch, Jens Geiger
-
Patent number: 10007052Abstract: The waveguide structure can be manufactured on wafer-scale and comprises a holding structure and a first and a second waveguides each having a core and two end faces. The holding structure comprises a separation structure being arranged between the first and the second waveguide and provides an optical separation between the first and the second waveguide in a region between the end faces of the first and second waveguides. A method for manufacturing such a waveguide structure with at least one waveguide comprises shaping replication material by means of tool structures to obtain the end faces, hardening the replication material and removing the tool structures from a waveguide structures wafer comprising a plurality of so-obtained waveguides.Type: GrantFiled: February 3, 2016Date of Patent: June 26, 2018Assignee: Heptagon Micro Optics Pte. Ltd.Inventors: Simon Gubser, Frank Sobel, Alexander Bietsch, Jens Geiger
-
Publication number: 20170089757Abstract: An optoelectronic module that includes a reflectance member which exhibits mitigated or eliminated fan-out field-of-view overlap can be concealed or its visual impact minimized compared to a host device in which the optoelectronic module is mounted. In some instances, the reflectance member can be implemented as a plurality of through holes and in other instances the reflectance member may be a contiguous spin-coated polymeric coating. In general, the reflectance member can be diffusively reflective to the same particular wavelengths or ranges of wavelengths as the host device in which it is mounted.Type: ApplicationFiled: September 23, 2016Publication date: March 30, 2017Applicant: Heptagon Micro Optics Pte. Ltd.Inventors: Jens Geiger, Frank Sobel, Rene Kromhof, Alberto Soppelsa, Kevin Hauser, Robert Lenart
-
Publication number: 20160223746Abstract: The waveguide structure can be manufactured on wafer-scale and comprises a holding structure and a first and a second waveguides each having a core and two end faces. The holding structure comprises a separation structure being arranged between the first and the second waveguide and provides an optical separation between the first and the second waveguide in a region between the end faces of the first and second waveguides. A method for manufacturing such a waveguide structure with at least one waveguide comprises shaping replication material by means of tool structures to obtain the end faces, hardening the replication material and removing the tool structures from a waveguide structures wafer comprising a plurality of so-obtained waveguides.Type: ApplicationFiled: February 3, 2016Publication date: August 4, 2016Inventors: Simon Gubser, Frank Sobel, Alexander Bietsch, Jens Geiger
-
Patent number: 7517617Abstract: This invention relates to a mask blank for use in EUV lithography and a method for its production. The mask blank comprises a substrate with a front side and a rear side whereby a coating is applied to the front side for use as a mask in EUV lithography and the rear side of the substrate comprises an electrically conductive coating. The electrically conductive coating is particularly abrasion resistant and strongly adhesive according to DIN 58196-5 (German Industry Standard), DIN 58196-4 and DIN 58196-6 and characterised by a minimum electrical conductivity. The electrically conductive coating is applied by means of ion-beam-assisted sputtering. Since the electrically conductive coating on the rear side is so abrasion resistant and strongly adhesive, the mask blank may be gripped, held and handled by means of an electrostatic holding device (chuck) without any troublesome abrasion occurring.Type: GrantFiled: April 16, 2004Date of Patent: April 14, 2009Assignee: Schott AGInventors: Lutz Aschke, Markus Renno, Mario Schiffler, Frank Sobel, Hans Becker
-
Publication number: 20070128528Abstract: The present invention relates to mask blanks with anti reflective coatings comprising at least two sublayers. Such bilayer or multilayer anti reflective coatings are advantageous for binary and phase shift mask blanks for use in lithography for an exposure wavelength of 300 nm or less with improved anti reflection properties; and to EUVL mask blanks having improved inspection properties.Type: ApplicationFiled: September 26, 2006Publication date: June 7, 2007Inventors: Gunter Hess, Hans Becker, Oliver Goetzberger, Markus Renno, Ute Buttgereit, Frank Schmidt, Frank Sobel
-
Publication number: 20070076833Abstract: The present invention relates to embedded attenuated phase shift mask blanks for use in lithography for an exposure wavelength of 300 nm or less, and a method of fabricating such mask blanks by ion beam deposition. In particular, the mask blanks comprise a substrate and a thin film system wherein the thin film system comprises a transmission control sublayer comprising one or more metals or metal compounds selected from the group consisting of Mg, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Zn, Ge, Sn, Pb, oxides, nitrides, borides and carbides thereof, and combinations of metals and compounds thereof; and a phase shift control sublayer comprising borides, carbides, oxides and/or nitrides of Ge, Si and/or Al or combinations thereof.Type: ApplicationFiled: September 6, 2004Publication date: April 5, 2007Inventors: Hans Becker, Ute Buttgereit, Guenter Hess, Oliver Zberger, Frank Schmidt, Frank Sobel, Markus Renno
-
Publication number: 20060115744Abstract: The invention relates to a method of producing a mask blank (1) for photolithographic applications, particularly in EUV lithography, comprising the steps of: providing a substrate (2) which has a front side (4) and a rear side (3); depositing an electrically conductive layer (5) on the rear side of the substrate; depositing a coating on the front side of the substrate, wherein the coating comprises at least a first layer (6) and a second layer (9); and structuring the coating (6, 9) for photolithographic applications; wherein a respective handling area (22; 22a-22c) is formed on the front side (4) at least at one predefined location, said handling area not being structured for photolithographic applications and being designed for the handling of the mask blank (1) by means of a mechanical clamp or handling device, and wherein the first layer (6) is exposed in the respective handling area (22; 22a-22c) so that, when the mask blank (1) is handled from the front side, the mechanical clamp or handling deviType: ApplicationFiled: August 8, 2005Publication date: June 1, 2006Inventors: Lutz Aschke, Frank Sobel, Guenter Hess, Hans Becker, Markus Renno, Frank Schmidt, Oliver Goetzberger
-
Patent number: 7029803Abstract: The present invention relates to attenuating phase shift mask blanks for use in lithography, a method of fabricating such a mask blank.Type: GrantFiled: September 5, 2003Date of Patent: April 18, 2006Assignees: Schott AG, IBMInventors: Hans Becker, Ute Buttgereit, Gunter Hess, Oliver Goetzberger, Frank Schmidt, Frank Sobel, Markus Renno, S. Jay Chey
-
Publication number: 20060008749Abstract: The invention relates to a method for manufacturing of a mask blank for extreme ultraviolet (EUV) photolithography, comprising the steps of: providing a substrate having a front surface and a back surface; depositing a film comprising tantalum nitride (TaN) on said front surface of said substrate for absorbing EUV light used during a photolithographic process; and depositing a conductive coating on said back surface of said substrate. Preferably, ion beam sputtering is used for depositing the film comprising tantalum nitride (TaN) and/or the conductive coating on the back surface of the substrate. Preferably, Xenon is used as a sputter gas for ion beam sputtering. Another aspect of the present invention relates to a mask blank for extreme ultraviolet (EUV) photolithography.Type: ApplicationFiled: July 8, 2004Publication date: January 12, 2006Inventors: Frank Sobel, Lutz Aschke, Guenter Hess, Hans Becker, Markus Renno, Frank Schmidt, Oliver Goetzberger
-
Publication number: 20050260504Abstract: A mask blank and photomask for exposure light having a wavelength of 300 nm or is less described having an improved chemical durability in particular with respect to alkaline cleaning procedures. In particular, a mask blank and photomask comprise an additional ultra thin protection layer provided on a silicon and/or aluminum containing layer.Type: ApplicationFiled: April 8, 2005Publication date: November 24, 2005Inventors: Hans Becker, Ute Buttgereit, Guenter Hess, Oliver Goetzberger, Frank Schmidt, Frank Sobel, Markus Renno
-
Publication number: 20050190450Abstract: The present invention relates to phase shift mask blanks for exposure wavelength of less than 300 nm, a process for their preparation, to phase shift masks manufactured by such phase shift mask blanks and a process for the preparation of said phase shift masks.Type: ApplicationFiled: January 24, 2005Publication date: September 1, 2005Inventors: Hans Becker, Frank Schmidt, Oliver Goetzberger, Guenter Hess, Ute Buttgereit, Frank Sobel, Markus Renno
-
Publication number: 20050053845Abstract: The present invention relates to attenuating phase shift mask blanks for use in lithography, a method of fabricating such a mask blank.Type: ApplicationFiled: September 5, 2003Publication date: March 10, 2005Applicants: SCHOTT GLAS, IBMInventors: Hans Becker, Ute Buttgereit, Gunter Hess, Oliver Goetzberger, Frank Schmidt, Frank Sobel, Markus Renno, S. Chey
-
Publication number: 20040234870Abstract: This invention relates to a mask blank for use in EUV lithography and a method for its production.Type: ApplicationFiled: April 16, 2004Publication date: November 25, 2004Inventors: Lutz Aschke, Markus Renno, Mario Schiffler, Frank Sobel, Hans Becker
-
Publication number: 20040231971Abstract: The invention relates to a photo mask blank, a photo mask, a method and an apparatus for manufacturing a photo mask blank in general, and for manufacturing a photo mask blank by particle beam sputtering in particular. It is an object of the invention to provide a method of manufacturing a photo mask blank of high quality and high stability that is suitable for the production of a photo mask having small structures. The invention proposes a method for manufacturing a photo mask blank, wherein a substrate and a target are provided in a vacuum chamber. The target is sputtered by irradiating with a first particle or ion beam and at least a first layer of a first material is deposited on the substrate by the sputtering of said target.Type: ApplicationFiled: February 11, 2004Publication date: November 25, 2004Inventors: Hans Becker, Mario Schiffler, Frank Lenzen, Ute Buttgereit, Gunter Hess, Frank Sobel, Lutz Aschke, Markus Renno, Oliver Goetzenberger, Frank Schmidt