Abstract: A hollow cathode system, a device and a method for the plasma-assisted treatment of substrates includes at least one hollow cathode, which can be connected to a power supply. The hollow cathode includes an electrically conducting main body with an opening which is bounded by ribs, follows a spiral or meandering path and allows a gas to pass through in a direction perpendicular to a surface of the main body. Connecting bridge elements are provided on the ribs. The bridge elements serve ensure mechanical stability of the hollow cathode and optimize potential distribution of the hollow cathode. With the hollow cathode system, high treatment rates are achieved for homogeneous treatment of substrates of a large surface area with high plasma stability.

Abstract: A hollow cathode system, a device and a method for the plasma-assisted treatment of substrates includes at least one hollow cathode, which can be connected to a power supply. The hollow cathode includes an electrically conducting main body with an opening which is bounded by ribs, follows a spiral or meandering path and allows a gas to pass through in a direction perpendicular to a surface of the main body. Connecting bridge elements are provided on the ribs. The bridge elements serve ensure mechanical stability of the hollow cathode and optimize potential distribution of the hollow cathode. With the hollow cathode system, high treatment rates are achieved for homogeneous treatment of substrates of a large surface area with high plasma stability.

Abstract: The present invention comprises an electrode arrangement for a coating device with a stationary first electrode (3) and a second movable electrode (18), whose principle surfaces are opposing each other during coating, wherein the second electrode (18) may be moved along a plane parallel to the opposing principle surfaces, wherein at least one end face of an electrode running transversely to the principal surface an electrical shield (12, 19, 13) is provided, which extends at least partially parallel to the end face of one electrode, wherein at least one part (14) of the shield is formed so as to be movable.

Abstract: A processing system for processing a substrate includes a process chamber for receiving the substrate, a patterning device installed within the process chamber, and a mechanism for transferring the substrate into the process chamber and for aligning the substrate relative to the patterning device.

Abstract: The present invention comprises an electrode arrangement for a coating device with a stationary first electrode (3) and a second movable electrode (18), whose principle surfaces are opposing each other during coating, wherein the second electrode (18) may be moved along a plane parallel to the opposing principle surfaces, wherein at least one end face of an electrode running transversely to the principal surface an electrical shield (12, 19, 13) is provided, which extends at least partially parallel to the end face of one electrode, wherein at least one part (14) of the shield is formed so as to be movable.

Abstract: The present invention concerns a thin-film encapsulation structure for electronic devices with organic substances, especially OLEDs or other organic optoelectronic devices as well as corresponding components and a process for the production with a primary, inorganic barrier layer (5), which is directly arranged on the device or the surface to be encapsulated; a planarization layer (6) arranged on the primary, inorganic barrier layer, the thickness of said planarization layer selected such that it is thicker than the simple value of the distance between highest peak and deepest valley of the surface of the primary barrier layer or the surface of the device under the primary barrier layer or the surface to be encapsulated, as well as a secondary barrier layer (14) arranged on the planarization layer.

Abstract: The present invention concerns a thin-film encapsulation structure for electronic devices with organic substances, especially OLEDs or other organic optoelectronic devices as well as corresponding components and a process for the production with a primary, inorganic barrier layer (5), which is directly arranged on the device or the surface to be encapsulated; a planarization layer (6) arranged on the primary, inorganic barrier layer, the thickness of said planarization layer selected such that it is thicker than the simple value of the distance between highest peak and deepest valley of the surface of the primary barrier layer or the surface of the device under the primary barrier layer or the surface to be encapsulated, as well as a secondary barrier layer (14) arranged on the planarization layer.